PMV20XNE215
  • Share:

NXP USA Inc. PMV20XNE215

Manufacturer No:
PMV20XNE215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV20XNE215 is a 30 V, N-channel Trench MOSFET produced by NXP USA Inc. This component is part of NXP's extensive range of power MOSFETs designed to provide high performance and reliability in various applications. The PMV20XNE215 is known for its robust design and advanced features, making it suitable for use in automotive, industrial, and consumer electronics.

Key Specifications

ParameterValue
Type numberPMV20XNE
PackageSOT23
Channel typeN-channel
VDS [max]30 V
VGS [max]12 V
RDSon [max] @ VGS = 4.5 V; @25°C23 mΩ
RDSon [max] @ VGS = 2.5 V30 mΩ
VESD2000 kV
Tj [max]150°C
ID [max]7.2 A
QGD [typ]2.1 nC
QG(tot) [typ] @ VGS = 4.5 V12.4 nC
Ptot [max]0.51 W
VGSth [typ]0.65 V
Automotive qualifiedYes
Ciss [typ]1150 pF
Coss [typ]110 pF

Key Features

  • High Voltage Capability: The PMV20XNE215 can handle a maximum drain-source voltage (VDS) of 30 V, making it suitable for applications requiring high voltage handling.
  • Low On-Resistance: With a maximum on-resistance (RDSon) of 23 mΩ at VGS = 4.5 V, this MOSFET offers low power losses and high efficiency.
  • High Current Rating: The component has a maximum continuous drain current (ID) of 7.2 A, supporting high current applications.
  • ESD Protection: It features a high ESD protection of 2000 kV, enhancing the component's reliability in harsh environments.
  • Automotive Qualified: The PMV20XNE215 is qualified for automotive use, ensuring it meets the stringent requirements of the automotive industry.

Applications

The PMV20XNE215 is versatile and can be used in various applications, including:

  • Automotive Systems: Suitable for use in automotive electronics such as power management, motor control, and battery management systems.
  • Industrial Electronics: Used in industrial power supplies, motor drives, and other high-power applications.
  • Consumer Electronics: Can be applied in consumer devices requiring high power handling and efficiency, such as power adapters and battery chargers.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV20XNE215?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the package type of the PMV20XNE215?
    The package type is SOT23.
  3. What is the maximum on-resistance (RDSon) of the PMV20XNE215?
    The maximum on-resistance (RDSon) is 23 mΩ at VGS = 4.5 V.
  4. What is the maximum continuous drain current (ID) of the PMV20XNE215?
    The maximum continuous drain current (ID) is 7.2 A.
  5. Is the PMV20XNE215 automotive qualified?
    Yes, the PMV20XNE215 is automotive qualified.
  6. What is the ESD protection rating of the PMV20XNE215?
    The ESD protection rating is 2000 kV.
  7. What is the maximum junction temperature (Tj) of the PMV20XNE215?
    The maximum junction temperature (Tj) is 150°C.
  8. What are some common applications of the PMV20XNE215?
    Common applications include automotive systems, industrial electronics, and consumer electronics.
  9. What is the typical gate threshold voltage (VGSth) of the PMV20XNE215?
    The typical gate threshold voltage (VGSth) is 0.65 V.
  10. Is the PMV20XNE215 RoHS compliant?
    Yes, the PMV20XNE215 is RoHS compliant.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
148

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number PMV20XNE215 PMV20XN,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V
Current - Continuous Drain (Id) @ 25°C - 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.5V, 4.5V
Rds On (Max) @ Id, Vgs - 25mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id - 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 10 nC @ 4.5 V
Vgs (Max) - ±12V
Input Capacitance (Ciss) (Max) @ Vds - 585 pF @ 15 V
FET Feature - -
Power Dissipation (Max) - 510mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - SOT-23 (TO-236AB)
Package / Case - TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

BB178,335
BB178,335
NXP USA Inc.
DIODE VHF VAR CAP 32V SOD523
TDA8763AM/3/C4,112
TDA8763AM/3/C4,112
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
ADC1004S030TS/C1:1
ADC1004S030TS/C1:1
NXP USA Inc.
IC ADC 10BIT 28SSOP
MK11DN512AVMC5
MK11DN512AVMC5
NXP USA Inc.
IC MCU 32B 512KB FLASH 121MAPBGA
S9S12G48AMLF
S9S12G48AMLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
P89LPC935FDH,518
P89LPC935FDH,518
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
HEF4053BT/AUJ
HEF4053BT/AUJ
NXP USA Inc.
IC ANLG SWITCH TRPL SPDT 16SOIC
PCA9514AD,112
PCA9514AD,112
NXP USA Inc.
IC BUFFER I2C/SMBUS HOTSWAP 8SO
MMPF0200F6AEP
MMPF0200F6AEP
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56HVQFN
PCA24S08AD
PCA24S08AD
NXP USA Inc.
IC EEPROM 8KBIT 400KHZ 8SO
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC
MMA8652FCR1
MMA8652FCR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C 10DFN