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PMV20XNE215
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NXP USA Inc. PMV20XNE215

Manufacturer No:
PMV20XNE215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV20XNE215 is a 30 V, N-channel Trench MOSFET produced by NXP USA Inc. This component is part of NXP's extensive range of power MOSFETs designed to provide high performance and reliability in various applications. The PMV20XNE215 is known for its robust design and advanced features, making it suitable for use in automotive, industrial, and consumer electronics.

Key Specifications

ParameterValue
Type numberPMV20XNE
PackageSOT23
Channel typeN-channel
VDS [max]30 V
VGS [max]12 V
RDSon [max] @ VGS = 4.5 V; @25°C23 mΩ
RDSon [max] @ VGS = 2.5 V30 mΩ
VESD2000 kV
Tj [max]150°C
ID [max]7.2 A
QGD [typ]2.1 nC
QG(tot) [typ] @ VGS = 4.5 V12.4 nC
Ptot [max]0.51 W
VGSth [typ]0.65 V
Automotive qualifiedYes
Ciss [typ]1150 pF
Coss [typ]110 pF

Key Features

  • High Voltage Capability: The PMV20XNE215 can handle a maximum drain-source voltage (VDS) of 30 V, making it suitable for applications requiring high voltage handling.
  • Low On-Resistance: With a maximum on-resistance (RDSon) of 23 mΩ at VGS = 4.5 V, this MOSFET offers low power losses and high efficiency.
  • High Current Rating: The component has a maximum continuous drain current (ID) of 7.2 A, supporting high current applications.
  • ESD Protection: It features a high ESD protection of 2000 kV, enhancing the component's reliability in harsh environments.
  • Automotive Qualified: The PMV20XNE215 is qualified for automotive use, ensuring it meets the stringent requirements of the automotive industry.

Applications

The PMV20XNE215 is versatile and can be used in various applications, including:

  • Automotive Systems: Suitable for use in automotive electronics such as power management, motor control, and battery management systems.
  • Industrial Electronics: Used in industrial power supplies, motor drives, and other high-power applications.
  • Consumer Electronics: Can be applied in consumer devices requiring high power handling and efficiency, such as power adapters and battery chargers.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV20XNE215?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the package type of the PMV20XNE215?
    The package type is SOT23.
  3. What is the maximum on-resistance (RDSon) of the PMV20XNE215?
    The maximum on-resistance (RDSon) is 23 mΩ at VGS = 4.5 V.
  4. What is the maximum continuous drain current (ID) of the PMV20XNE215?
    The maximum continuous drain current (ID) is 7.2 A.
  5. Is the PMV20XNE215 automotive qualified?
    Yes, the PMV20XNE215 is automotive qualified.
  6. What is the ESD protection rating of the PMV20XNE215?
    The ESD protection rating is 2000 kV.
  7. What is the maximum junction temperature (Tj) of the PMV20XNE215?
    The maximum junction temperature (Tj) is 150°C.
  8. What are some common applications of the PMV20XNE215?
    Common applications include automotive systems, industrial electronics, and consumer electronics.
  9. What is the typical gate threshold voltage (VGSth) of the PMV20XNE215?
    The typical gate threshold voltage (VGSth) is 0.65 V.
  10. Is the PMV20XNE215 RoHS compliant?
    Yes, the PMV20XNE215 is RoHS compliant.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number PMV20XNE215 PMV20XN,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V
Current - Continuous Drain (Id) @ 25°C - 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.5V, 4.5V
Rds On (Max) @ Id, Vgs - 25mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id - 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 10 nC @ 4.5 V
Vgs (Max) - ±12V
Input Capacitance (Ciss) (Max) @ Vds - 585 pF @ 15 V
FET Feature - -
Power Dissipation (Max) - 510mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - SOT-23 (TO-236AB)
Package / Case - TO-236-3, SC-59, SOT-23-3

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