PMCM4401VPEZ
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NXP Semiconductors PMCM4401VPEZ

Manufacturer No:
PMCM4401VPEZ
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA PMCM4401VPE - 12V, P-CH
Delivery:
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iso45001
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Product Introduction

Overview

The PMCM4401VPEZ is a P-channel enhancement mode Field-Effect Transistor (FET) produced by NXP Semiconductors, now part of Nexperia. This device is packaged in a 4-bump Wafer Level Chip-Size Package (WLCSP) and utilizes Trench MOSFET technology. It is designed for high-performance applications requiring low on-resistance and high current handling capabilities.

Key Specifications

ParameterValue
Voltage Rating (Vds)12 V
Continuous Drain Current (Id)3.9 A (Ta), 400 mA (Ta), 12.5 W (Tc)
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Gate Charge (Qg)10 nC
Power Dissipation (Pd)12.5 W
Package Type4-WLCSP (0.78x0.78 mm)

Key Features

  • P-channel enhancement mode Field-Effect Transistor (FET)
  • Trench MOSFET technology for low on-resistance and high efficiency
  • High current handling capability up to 3.9 A
  • Compact 4-bump WLCSP package for space-saving designs
  • Wide operating temperature range from -55°C to +150°C

Applications

The PMCM4401VPEZ is suitable for a variety of applications including but not limited to:

  • Power management in portable electronics
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Automotive and industrial power systems
  • High-frequency switching applications

Q & A

  1. What is the voltage rating of the PMCM4401VPEZ?
    The voltage rating of the PMCM4401VPEZ is 12 V.
  2. What is the maximum continuous drain current of the PMCM4401VPEZ?
    The maximum continuous drain current is 3.9 A (Ta) and 400 mA (Ta) with a power dissipation of 12.5 W (Tc).
  3. What is the operating temperature range of the PMCM4401VPEZ?
    The operating temperature range is from -55°C to +150°C.
  4. What type of package does the PMCM4401VPEZ use?
    The PMCM4401VPEZ is packaged in a 4-bump Wafer Level Chip-Size Package (WLCSP).
  5. What technology is used in the PMCM4401VPEZ?
    The PMCM4401VPEZ uses Trench MOSFET technology.
  6. What is the gate charge of the PMCM4401VPEZ?
    The gate charge (Qg) is 10 nC.
  7. What is the power dissipation of the PMCM4401VPEZ?
    The power dissipation (Pd) is 12.5 W.
  8. Where can I find detailed specifications for the PMCM4401VPEZ?
    Detailed specifications can be found in the datasheet available on the Nexperia website or through distributors like Mouser and Digi-Key.
  9. What are some common applications for the PMCM4401VPEZ?
    Common applications include power management in portable electronics, DC-DC converters, motor control, automotive and industrial power systems, and high-frequency switching applications.
  10. Who is the manufacturer of the PMCM4401VPEZ?
    The PMCM4401VPEZ is manufactured by NXP Semiconductors, now part of Nexperia.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:415 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-WLCSP (0.78x0.78)
Package / Case:4-XFBGA, WLCSP
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Similar Products

Part Number PMCM4401VPEZ PMCM4401UPEZ
Manufacturer NXP Semiconductors Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 3A, 4.5V 95mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 10 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 415 pF @ 6 V 420 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 400mW (Ta), 12.5W (Tc) 400mW (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 4-WLCSP (0.78x0.78) 4-WLCSP (0.78x0.78)
Package / Case 4-XFBGA, WLCSP 4-XFBGA, WLCSP

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