PMEG045T150EPDAZ
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NXP Semiconductors PMEG045T150EPDAZ

Manufacturer No:
PMEG045T150EPDAZ
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA PMEG045T150EPD - 45 V,
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMEG045T150EPDAZ is a high-performance Schottky barrier rectifier diode manufactured by Nexperia, formerly part of NXP Semiconductors. This component is designed for high-efficiency and reliability in various power management and rectification applications. It features a low forward voltage drop and fast recovery time, making it suitable for use in automotive and industrial environments.

Key Specifications

Parameter Conditions Min Typ Max Unit
Reverse Voltage (VRRM) - - 45 V
Average Forward Current (IF(AV)) - - 15 A
Forward Voltage (VF) @ IF = 15 A - - 550 mV
Reverse Recovery Time (trr) - - 20 ns
Reverse Leakage Current @ VR = 45 V - - 100 µA
Capacitance @ VR, f = 1 MHz - - 800 pF
Operating Temperature - Junction - - 175 °C
Mounting Type - - Surface Mount -
Package / Case - - 3-SMD, Flat Leads (CFP15) -

Key Features

  • Low Forward Voltage Drop: The PMEG045T150EPDAZ has a low forward voltage drop, typically 550 mV at 15 A, which reduces power losses and increases efficiency in power management applications.
  • Fast Recovery Time: With a reverse recovery time of 20 ns, this diode is suitable for high-frequency applications where fast switching is required.
  • High Average Forward Current: The diode can handle an average forward current of up to 15 A, making it suitable for high-power applications.
  • Low Leakage Current: The reverse leakage current is as low as 100 µA at 45 V, which helps in minimizing standby power consumption.
  • Automotive Grade: This diode is AEC-Q101 qualified, ensuring it meets the stringent requirements for automotive applications.

Applications

  • Automotive Systems: Suitable for use in automotive power management, battery charging, and power conversion systems due to its AEC-Q101 qualification.
  • Industrial Power Supplies: Used in high-efficiency power supplies, DC-DC converters, and rectifier circuits in industrial environments.
  • Consumer Electronics: Applied in power management circuits of consumer electronics such as laptops, smartphones, and other portable devices.
  • Renewable Energy Systems: Used in solar and wind power systems for efficient power conversion and rectification.

Q & A

  1. What is the maximum reverse voltage of the PMEG045T150EPDAZ?

    The maximum reverse voltage (VRRM) is 45 V.

  2. What is the average forward current rating of this diode?

    The average forward current (IF(AV)) is up to 15 A.

  3. What is the typical forward voltage drop at 15 A?

    The typical forward voltage drop (VF) at 15 A is 550 mV.

  4. What is the reverse recovery time of this diode?

    The reverse recovery time (trr) is 20 ns.

  5. Is the PMEG045T150EPDAZ suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  6. What is the operating junction temperature of this diode?

    The maximum operating junction temperature is 175°C.

  7. What type of package does the PMEG045T150EPDAZ come in?

    The diode comes in a 3-SMD, Flat Leads (CFP15) package.

  8. What is the capacitance of the diode at 10 V and 1 MHz?

    The capacitance is 800 pF at 10 V and 1 MHz.

  9. Is the PMEG045T150EPDAZ RoHS compliant?

    No, it is not RoHS compliant according to the provided specifications.

  10. Where can I find more detailed specifications and datasheets for the PMEG045T150EPDAZ?

    You can find detailed specifications and datasheets on the Nexperia website or through distributors like Mouser, Digi-Key, and Heisener.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):45 V
Current - Average Rectified (Io):15A
Voltage - Forward (Vf) (Max) @ If:550 mV @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):20 ns
Current - Reverse Leakage @ Vr:100 µA @ 45 V
Capacitance @ Vr, F:800pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-277, 3-PowerDFN
Supplier Device Package:CFP15
Operating Temperature - Junction:175°C (Max)
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Same Series
PMEG045T150EPDZ
PMEG045T150EPDZ
DIODE SCHOTTKY 45V 15A CFP15

Similar Products

Part Number PMEG045T150EPDAZ PMEG045V150EPDAZ PMEG045T150EPDZ PMEG045T100EPDAZ
Manufacturer NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 45 V 45 V 45 V 45 V
Current - Average Rectified (Io) 15A 15A 15A 14A (DC)
Voltage - Forward (Vf) (Max) @ If 550 mV @ 15 A 490 mV @ 15 A 550 mV @ 15 A 480 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 20 ns 19 ns 20 ns 40 ns
Current - Reverse Leakage @ Vr 100 µA @ 45 V 900 µA @ 15 V 100 µA @ 45 V 80 µA @ 45 V
Capacitance @ Vr, F 800pF @ 10V, 1MHz 1870pF @ 1V, 1MHz 800pF @ 10V, 1MHz 1.4nF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Supplier Device Package CFP15 CFP15 CFP15 CFP15
Operating Temperature - Junction 175°C (Max) -65°C ~ 175°C 175°C (Max) 175°C (Max)

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