NX7002BKXB147
  • Share:

NXP USA Inc. NX7002BKXB147

Manufacturer No:
NX7002BKXB147
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX7002BKXB is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP Semiconductors. This component utilizes Trench MOSFET technology and is packaged in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) package. It is designed to offer high performance and reliability in various electronic applications.

Key Specifications

Parameter Value Unit
Type number NX7002BKXB -
Package DFN1010B-6 (SOT1216) -
Channel type Dual N-channel -
VDS [max] 60 V
VGS [max] 20 V
RDSon [max] @ VGS = 10 V 2800
RDSon [max] @ VGS = 5 V 3200
VESD (HBM) > 2 kV kV
Tj [max] 150 °C
ID [max] 0.33 A
Ptot [max] 1.6 W

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Leadless ultra small DFN1010B-6 (SOT1216) package

Applications

  • Relay driver
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits
  • Automotive and industrial applications
  • Power, computing, consumer, mobile, and wearable devices

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX7002BKXB?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the package type of the NX7002BKXB?

    The package type is leadless ultra small DFN1010B-6 (SOT1216).

  3. What is the maximum gate-source voltage (VGS) of the NX7002BKXB?

    The maximum gate-source voltage (VGS) is 20 V.

  4. Does the NX7002BKXB have ESD protection? 2 kV HBM.

  5. What are some common applications of the NX7002BKXB?

    Common applications include relay drivers, high-speed line drivers, low-side loadswitches, and switching circuits.

  6. Is the NX7002BKXB suitable for automotive applications?
  7. What is the maximum junction temperature (Tj) of the NX7002BKXB?

    The maximum junction temperature (Tj) is 150°C.

  8. What is the maximum drain current (ID) of the NX7002BKXB?

    The maximum drain current (ID) is 0.33 A.

  9. What is the typical threshold voltage (VGSth) of the NX7002BKXB?

    The typical threshold voltage (VGSth) is not explicitly stated, but it is logic-level compatible.

  10. How can I obtain samples of the NX7002BKXB?

    Samples can be ordered via NXP Semiconductors' sales organization or through their network of global and regional distributors.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

$0.05
9,604

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

BAS16/DG215
BAS16/DG215
NXP USA Inc.
RECTIFIER DIODE, 0.215A, 100V
BZX84-C13/DG/B3215
BZX84-C13/DG/B3215
NXP USA Inc.
DIODE ZENER
BZX84-C27/LF1VL
BZX84-C27/LF1VL
NXP USA Inc.
DIODE ZENER 27V 250MW TO236AB
BF908R,215
BF908R,215
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143
MK11DN512AVMC5
MK11DN512AVMC5
NXP USA Inc.
IC MCU 32B 512KB FLASH 121MAPBGA
MKE04Z64VLH4
MKE04Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
S9S12G48ACLF
S9S12G48ACLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
74HC4852D,112
74HC4852D,112
NXP USA Inc.
74HC4852D - DIFFERENTIAL MULTIP
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
74HC2G08DC/C125
74HC2G08DC/C125
NXP USA Inc.
IC GATE AND 2CH 2-INP 8VSSOP
MFRC53001T/0FE,112
MFRC53001T/0FE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO
MPX53GP
MPX53GP
NXP USA Inc.
SENSOR GAUGE PRESSURE 7 PSI MAX