NX7002BKMB315
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NXP USA Inc. NX7002BKMB315

Manufacturer No:
NX7002BKMB315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The 2N7002BKMB is a 60 V, single N-channel Trench MOSFET produced by Nexperia. It is packaged in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. This MOSFET utilizes Trench MOSFET technology, offering enhanced performance and reliability.

Key Specifications

ParameterValue
Type number2N7002BKMB
Package versionSOT883B
Package nameDFN1006B-3
Product statusEnd of life
Channel typeN
Nr of transistors1
V DS [max] (V)60
V GS [max] (V)20
R DSon [max] @ V GS = 10 V (mΩ)1600
R DSon [max] @ V GS = 5 V (mΩ)2000
T j [max] (°C)150
I D [max] (A)0.45
Q GD [typ] (nC)0.1
Q G(tot) [typ] @ V GS = 4.5 V (nC)0.5
P tot [max] (W)0.36
V GSth [typ] (V)1.6
Automotive qualifiedNo
C iss [typ] (pF)33
C oss [typ] (pF)7

Key Features

  • Very fast switching
  • Trench MOSFET technology
  • ESD protection up to 2 kV
  • Logic-level compatible
  • Ultra thin package profile with 0.37 mm height

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Q & A

  1. What is the maximum drain-source voltage (V DS) of the 2N7002BKMB?
    The maximum drain-source voltage (V DS) is 60 V.
  2. What is the maximum gate-source voltage (V GS) of the 2N7002BKMB?
    The maximum gate-source voltage (V GS) is 20 V.
  3. What is the typical on-resistance (R DSon) at V GS = 10 V?
    The typical on-resistance (R DSon) at V GS = 10 V is 1600 mΩ.
  4. Does the 2N7002BKMB have ESD protection?
    Yes, it has ESD protection up to 2 kV.
  5. What is the package type of the 2N7002BKMB?
    The package type is DFN1006B-3 (SOT883B).
  6. What are the typical applications of the 2N7002BKMB?
    Typical applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
  7. Is the 2N7002BKMB automotive qualified?
    No, it is not automotive qualified.
  8. What is the maximum junction temperature (T j) of the 2N7002BKMB?
    The maximum junction temperature (T j) is 150 °C.
  9. What is the maximum continuous drain current (I D) of the 2N7002BKMB?
    The maximum continuous drain current (I D) is 0.45 A.
  10. What is the typical gate-drain charge (Q GD) of the 2N7002BKMB?
    The typical gate-drain charge (Q GD) is 0.1 nC.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number NX7002BKMB315 NX7002BKM315
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
FET Type - -
Technology - -
Drain to Source Voltage (Vdss) - -
Current - Continuous Drain (Id) @ 25°C - -
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type - -
Supplier Device Package - -
Package / Case - -

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