NX2301P,215
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NXP Semiconductors NX2301P,215

Manufacturer No:
NX2301P,215
Manufacturer:
NXP Semiconductors
Package:
Tape & Reel (TR)
Description:
P-CHANNEL 20V 2A (TA) 400MW (TA)
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The NX2301P,215 is a 20 V, 2 A P-channel Trench MOSFET manufactured by Nexperia. This component is part of Nexperia's extensive portfolio of MOSFETs, known for their high performance and reliability. The NX2301P,215 is designed with Trench MOSFET technology, which offers low on-resistance and fast switching capabilities, making it suitable for a wide range of applications.

Key Specifications

Parameter Value
Brand Nexperia
Channel Type P-Channel
Maximum Continuous Drain Current 2 A
Maximum Drain Source Voltage 20 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 120 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.1 V
Minimum Gate Threshold Voltage 0.5 V
Maximum Power Dissipation 400 mW
Maximum Gate Source Voltage -8 V, +8 V
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 4.5 nC @ 10 V

Key Features

  • Trench MOSFET Technology: Offers low on-resistance and fast switching capabilities.
  • Low Voltage Gate Drive: Rated for 1.8 V RDSon, making it suitable for low voltage applications.
  • AEC-Q101 Qualified: Ensures the component meets automotive industry standards for reliability and performance.
  • Fast Switching: Very fast switching times, enhancing the efficiency of the system.
  • Lead-Free and RoHS Compliant: Environmentally friendly and compliant with international regulations.

Applications

The NX2301P,215 is versatile and can be used in various applications across different industries, including:

  • Automotive: Suitable for automotive systems due to its AEC-Q101 qualification.
  • Industrial: Used in industrial control systems, power supplies, and motor control.
  • Power and Computing: Ideal for DC-to-DC conversion, power management, and computing systems.
  • Consumer and Mobile Devices: Used in battery management, power switching, and other consumer electronics.

Q & A

  1. What is the maximum continuous drain current of the NX2301P,215?

    The maximum continuous drain current is 2 A.

  2. What is the maximum drain source voltage of the NX2301P,215?

    The maximum drain source voltage is 20 V.

  3. What package type does the NX2301P,215 use?

    The package type is SOT-23.

  4. Is the NX2301P,215 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified.

  5. What is the typical gate charge at Vgs for the NX2301P,215?

    The typical gate charge at Vgs is 4.5 nC @ 10 V.

  6. What are the operating temperature ranges for the NX2301P,215?

    The operating temperature ranges from -55 °C to +150 °C.

  7. Is the NX2301P,215 lead-free and RoHS compliant?

    Yes, it is lead-free and RoHS compliant.

  8. What is the maximum power dissipation of the NX2301P,215?

    The maximum power dissipation is 400 mW.

  9. What is the channel mode of the NX2301P,215?

    The channel mode is enhancement.

  10. What are some common applications for the NX2301P,215?

    Common applications include automotive, industrial, power and computing, and consumer electronics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta), 2.8W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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