NX2301P,215
  • Share:

NXP Semiconductors NX2301P,215

Manufacturer No:
NX2301P,215
Manufacturer:
NXP Semiconductors
Package:
Tape & Reel (TR)
Description:
P-CHANNEL 20V 2A (TA) 400MW (TA)
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX2301P,215 is a 20 V, 2 A P-channel Trench MOSFET manufactured by Nexperia. This component is part of Nexperia's extensive portfolio of MOSFETs, known for their high performance and reliability. The NX2301P,215 is designed with Trench MOSFET technology, which offers low on-resistance and fast switching capabilities, making it suitable for a wide range of applications.

Key Specifications

Parameter Value
Brand Nexperia
Channel Type P-Channel
Maximum Continuous Drain Current 2 A
Maximum Drain Source Voltage 20 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 120 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.1 V
Minimum Gate Threshold Voltage 0.5 V
Maximum Power Dissipation 400 mW
Maximum Gate Source Voltage -8 V, +8 V
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 4.5 nC @ 10 V

Key Features

  • Trench MOSFET Technology: Offers low on-resistance and fast switching capabilities.
  • Low Voltage Gate Drive: Rated for 1.8 V RDSon, making it suitable for low voltage applications.
  • AEC-Q101 Qualified: Ensures the component meets automotive industry standards for reliability and performance.
  • Fast Switching: Very fast switching times, enhancing the efficiency of the system.
  • Lead-Free and RoHS Compliant: Environmentally friendly and compliant with international regulations.

Applications

The NX2301P,215 is versatile and can be used in various applications across different industries, including:

  • Automotive: Suitable for automotive systems due to its AEC-Q101 qualification.
  • Industrial: Used in industrial control systems, power supplies, and motor control.
  • Power and Computing: Ideal for DC-to-DC conversion, power management, and computing systems.
  • Consumer and Mobile Devices: Used in battery management, power switching, and other consumer electronics.

Q & A

  1. What is the maximum continuous drain current of the NX2301P,215?

    The maximum continuous drain current is 2 A.

  2. What is the maximum drain source voltage of the NX2301P,215?

    The maximum drain source voltage is 20 V.

  3. What package type does the NX2301P,215 use?

    The package type is SOT-23.

  4. Is the NX2301P,215 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified.

  5. What is the typical gate charge at Vgs for the NX2301P,215?

    The typical gate charge at Vgs is 4.5 nC @ 10 V.

  6. What are the operating temperature ranges for the NX2301P,215?

    The operating temperature ranges from -55 °C to +150 °C.

  7. Is the NX2301P,215 lead-free and RoHS compliant?

    Yes, it is lead-free and RoHS compliant.

  8. What is the maximum power dissipation of the NX2301P,215?

    The maximum power dissipation is 400 mW.

  9. What is the channel mode of the NX2301P,215?

    The channel mode is enhancement.

  10. What are some common applications for the NX2301P,215?

    Common applications include automotive, industrial, power and computing, and consumer electronics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta), 2.8W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.51
1,419

Please send RFQ , we will respond immediately.

Same Series
NX2301PVL
NX2301PVL
MOSFET P-CHANNEL 20V 2A TO236AB

Related Product By Categories

CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3

Related Product By Brand

BAV99/8,215
BAV99/8,215
NXP Semiconductors
NEXPERIA BAV99 - DUAL HIGH-SPEED
BB131,115
BB131,115
NXP Semiconductors
VHF VARIABLE CAPACITANCE DIODE
BZV55-B27,115
BZV55-B27,115
NXP Semiconductors
NEXPERIA BZV55-B27 - ZENER DIODE
74HC4046ADB,112
74HC4046ADB,112
NXP Semiconductors
NEXPERIA 74HC4046ADB - PLL FREQU
74ABT244DB,112
74ABT244DB,112
NXP Semiconductors
NEXPERIA 74ABT244DB - BUS DRIVER
74HCT393D,652
74HCT393D,652
NXP Semiconductors
NEXPERIA 74HCT393D - BINARY COUN
74LVC1G14GF,132
74LVC1G14GF,132
NXP Semiconductors
NEXPERIA 74LVC1G14GF - INVERTER,
74AHC08D,118
74AHC08D,118
NXP Semiconductors
NEXPERIA 74AHC08D - AND GATE, AH
74HC86DB112
74HC86DB112
NXP Semiconductors
IC GATE XOR 4CH 2-INP 14SSOP
74HCT138PW,118
74HCT138PW,118
NXP Semiconductors
NEXPERIA 74HCT138PW - DECODER/DR
74HCT151D,652
74HCT151D,652
NXP Semiconductors
NEXPERIA 74HCT151D - MULTIPLEXER
TL431AMFDT,215
TL431AMFDT,215
NXP Semiconductors
NEXPERIA TL431 - ADJUSTABLE PREC