NX2301PVL
  • Share:

Nexperia USA Inc. NX2301PVL

Manufacturer No:
NX2301PVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CHANNEL 20V 2A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX2301PVL is a 20 V, 2 A P-channel Trench MOSFET produced by Nexperia. This component is part of Nexperia's extensive portfolio of MOSFETs, which are known for their high efficiency and reliability. The NX2301PVL is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications where space is limited.

Key Specifications

ParameterValue
Type NumberNX2301PVL
PackageSOT23 (TO-236AB)
Channel TypeP-channel
VDS [max]-20 V
RDSon [max] @ VGS = 4.5 V; @25°C120 mΩ
RDSon [max] @ VGS = 2.5 V190 mΩ
Tj [max]150°C
ID [max]-2 A
QGD [typ]0.9 nC
QG(tot) [typ] @ VGS = 4.5 V4.5 nC
Ptot [max]0.71 W
VGSth [typ]-0.75 V
Automotive QualifiedYes (AEC-Q101)
Ciss [typ]380 pF
Coss [typ]135 pF

Key Features

  • 1.8 V RDSon rated for Low Voltage Gate Drive
  • AEC-Q101 qualified, ensuring reliability in automotive applications
  • Trench MOSFET technology for enhanced performance and efficiency
  • Very fast switching capabilities
  • High-side load switch, high-speed line driver, and relay driver applications

Applications

The NX2301PVL is versatile and can be used in various applications across different industries. Some of the key applications include:

  • Automotive electronics: Suitable for use in automotive systems due to its AEC-Q101 qualification.
  • Industrial electronics: Used in high-speed line drivers, relay drivers, and switching circuits.
  • Consumer electronics: Ideal for mobile and consumer devices requiring efficient and compact power management solutions.
  • Power management: Used in DC-to-DC conversion and other power management circuits.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX2301PVL?
    The maximum drain-source voltage (VDS) is -20 V.
  2. What is the typical on-resistance (RDSon) at VGS = 4.5 V?
    The typical on-resistance (RDSon) at VGS = 4.5 V is 120 mΩ.
  3. Is the NX2301PVL automotive qualified?
    Yes, the NX2301PVL is AEC-Q101 qualified.
  4. What is the maximum junction temperature (Tj) of the NX2301PVL?
    The maximum junction temperature (Tj) is 150°C.
  5. What are some common applications of the NX2301PVL?
    Common applications include high-side load switches, high-speed line drivers, relay drivers, and switching circuits.
  6. What package type is the NX2301PVL available in?
    The NX2301PVL is available in the SOT23 (TO-236AB) package.
  7. What is the maximum drain current (ID) of the NX2301PVL?
    The maximum drain current (ID) is -2 A.
  8. What is the typical gate-source threshold voltage (VGSth) of the NX2301PVL?
    The typical gate-source threshold voltage (VGSth) is -0.75 V.
  9. Is the NX2301PVL suitable for low voltage gate drive applications?
    Yes, it is rated for low voltage gate drive with an RDSon of 1.8 V.
  10. Where can I find more detailed specifications and application notes for the NX2301PVL?
    You can find detailed specifications and application notes on Nexperia's official website and through distributors like Mouser and X-On Electronics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.07
6,654

Please send RFQ , we will respond immediately.

Same Series
NX2301PVL
NX2301PVL
MOSFET P-CHANNEL 20V 2A TO236AB

Related Product By Categories

CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

PTVS14VS1UR/8X
PTVS14VS1UR/8X
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC SOD123W
PMEG4030ER-QX
PMEG4030ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PDZ27BZ
PDZ27BZ
Nexperia USA Inc.
DIODE ZENER 26.86V 400MW SOD323
PDZ27BF
PDZ27BF
Nexperia USA Inc.
DIODE ZENER 27V 400MW SOD323
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
BC846AW,135
BC846AW,135
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74HCT125DB,118
74HCT125DB,118
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14SSOP
74HC11DB,112
74HC11DB,112
Nexperia USA Inc.
NEXPERIA 74HC11D - AND GATE, HC/
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP
74HCT14D-Q100,118
74HCT14D-Q100,118
Nexperia USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO