NX2301PVL
  • Share:

Nexperia USA Inc. NX2301PVL

Manufacturer No:
NX2301PVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CHANNEL 20V 2A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX2301PVL is a 20 V, 2 A P-channel Trench MOSFET produced by Nexperia. This component is part of Nexperia's extensive portfolio of MOSFETs, which are known for their high efficiency and reliability. The NX2301PVL is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications where space is limited.

Key Specifications

ParameterValue
Type NumberNX2301PVL
PackageSOT23 (TO-236AB)
Channel TypeP-channel
VDS [max]-20 V
RDSon [max] @ VGS = 4.5 V; @25°C120 mΩ
RDSon [max] @ VGS = 2.5 V190 mΩ
Tj [max]150°C
ID [max]-2 A
QGD [typ]0.9 nC
QG(tot) [typ] @ VGS = 4.5 V4.5 nC
Ptot [max]0.71 W
VGSth [typ]-0.75 V
Automotive QualifiedYes (AEC-Q101)
Ciss [typ]380 pF
Coss [typ]135 pF

Key Features

  • 1.8 V RDSon rated for Low Voltage Gate Drive
  • AEC-Q101 qualified, ensuring reliability in automotive applications
  • Trench MOSFET technology for enhanced performance and efficiency
  • Very fast switching capabilities
  • High-side load switch, high-speed line driver, and relay driver applications

Applications

The NX2301PVL is versatile and can be used in various applications across different industries. Some of the key applications include:

  • Automotive electronics: Suitable for use in automotive systems due to its AEC-Q101 qualification.
  • Industrial electronics: Used in high-speed line drivers, relay drivers, and switching circuits.
  • Consumer electronics: Ideal for mobile and consumer devices requiring efficient and compact power management solutions.
  • Power management: Used in DC-to-DC conversion and other power management circuits.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX2301PVL?
    The maximum drain-source voltage (VDS) is -20 V.
  2. What is the typical on-resistance (RDSon) at VGS = 4.5 V?
    The typical on-resistance (RDSon) at VGS = 4.5 V is 120 mΩ.
  3. Is the NX2301PVL automotive qualified?
    Yes, the NX2301PVL is AEC-Q101 qualified.
  4. What is the maximum junction temperature (Tj) of the NX2301PVL?
    The maximum junction temperature (Tj) is 150°C.
  5. What are some common applications of the NX2301PVL?
    Common applications include high-side load switches, high-speed line drivers, relay drivers, and switching circuits.
  6. What package type is the NX2301PVL available in?
    The NX2301PVL is available in the SOT23 (TO-236AB) package.
  7. What is the maximum drain current (ID) of the NX2301PVL?
    The maximum drain current (ID) is -2 A.
  8. What is the typical gate-source threshold voltage (VGSth) of the NX2301PVL?
    The typical gate-source threshold voltage (VGSth) is -0.75 V.
  9. Is the NX2301PVL suitable for low voltage gate drive applications?
    Yes, it is rated for low voltage gate drive with an RDSon of 1.8 V.
  10. Where can I find more detailed specifications and application notes for the NX2301PVL?
    You can find detailed specifications and application notes on Nexperia's official website and through distributors like Mouser and X-On Electronics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.07
6,654

Please send RFQ , we will respond immediately.

Same Series
NX2301PVL
NX2301PVL
MOSFET P-CHANNEL 20V 2A TO236AB

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK

Related Product By Brand

BZV55-C33,115
BZV55-C33,115
Nexperia USA Inc.
DIODE ZENER 33V 500MW LLDS
BC847BPN/DG/B2,115
BC847BPN/DG/B2,115
Nexperia USA Inc.
TRANS GEN PURPOSE SC-88
PEMH11,315
PEMH11,315
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
BC807-40HZ
BC807-40HZ
Nexperia USA Inc.
BC807-40H/SOT23/TO-236AB
BC817-40QCH-QZ
BC817-40QCH-QZ
Nexperia USA Inc.
TRANS NPN 45V 0.5A DFN1412D-3
BCX54-16TF
BCX54-16TF
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
PDTA124EU,135
PDTA124EU,135
Nexperia USA Inc.
NEXPERIA PDTA124EU - SMALL SIGNA
BC847A/SNVL
BC847A/SNVL
Nexperia USA Inc.
TRANS NPN 45V 0.1A TO236AB
NX3008PBK,215
NX3008PBK,215
Nexperia USA Inc.
MOSFET P-CH 30V 230MA TO236AB
74AUP1G04GM,132
74AUP1G04GM,132
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 6XSON
74LVC02APW-Q100J
74LVC02APW-Q100J
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14TSSOP