PMST5550,135
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NXP Semiconductors PMST5550,135

Manufacturer No:
PMST5550,135
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA PMST5550 - SMALL SIGNAL
Delivery:
Payment:
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Product Introduction

Overview

The PMST5550,135 is an NPN high-voltage transistor produced by Nexperia, a company that was spun off from NXP Semiconductors. This transistor is designed for high-voltage applications and is packaged in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. It is suitable for a variety of electronic circuits requiring high voltage handling and low power dissipation.

Key Specifications

ParameterValue
Collector-Base Voltage VCB140 V
Emitter-Base Voltage VEBO6 V
Collector-Emitter Voltage VCE140 V
Collector-Emitter Saturation Voltage VCE(sat)250 mV
Power Dissipation Pd200 mW
Gain Bandwidth Product fT300 MHz
Continuous Collector Current IC0.3 A

Key Features

  • High-voltage capability: Up to 140 V collector-base voltage.
  • Low power dissipation: 200 mW.
  • High gain bandwidth product: 300 MHz.
  • Compact SOT323 (SC-70) SMD package.
  • Suitable for high-voltage and low-power applications.

Applications

The PMST5550,135 transistor is versatile and can be used in various high-voltage and low-power applications, including:

  • Switching circuits.
  • Amplifier circuits.
  • High-voltage signal processing.
  • Automotive and industrial control systems.

Q & A

  1. What is the maximum collector-base voltage of the PMST5550,135 transistor?
    The maximum collector-base voltage is 140 V.
  2. What is the power dissipation of the PMST5550,135 transistor?
    The power dissipation is 200 mW.
  3. What is the gain bandwidth product of the PMST5550,135 transistor?
    The gain bandwidth product is 300 MHz.
  4. What is the continuous collector current of the PMST5550,135 transistor?
    The continuous collector current is 0.3 A.
  5. In what package is the PMST5550,135 transistor available?
    The transistor is available in a SOT323 (SC-70) SMD package.
  6. What are some common applications of the PMST5550,135 transistor?
    Common applications include switching circuits, amplifier circuits, high-voltage signal processing, and automotive and industrial control systems.
  7. Who is the manufacturer of the PMST5550,135 transistor?
    The manufacturer is Nexperia, which was spun off from NXP Semiconductors.
  8. What is the emitter-base voltage of the PMST5550,135 transistor?
    The emitter-base voltage is 6 V.
  9. What is the collector-emitter saturation voltage of the PMST5550,135 transistor?
    The collector-emitter saturation voltage is 250 mV.
  10. Is the PMST5550,135 transistor suitable for high-voltage applications?
    Yes, it is designed for high-voltage applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):300 mA
Voltage - Collector Emitter Breakdown (Max):140 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 50mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
Power - Max:200 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Same Series
PMST5550,115
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TRANS NPN 140V 0.3A SOT323
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Similar Products

Part Number PMST5550,135 PMST5550,115
Manufacturer NXP Semiconductors Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 300 mA 300 mA
Voltage - Collector Emitter Breakdown (Max) 140 V 140 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V 60 @ 10mA, 5V
Power - Max 200 mW 200 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323

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