BUK764R2-80E,118
  • Share:

NXP USA Inc. BUK764R2-80E,118

Manufacturer No:
BUK764R2-80E,118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 80V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK764R2-80E,118 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc., which is a part of the NXP Semiconductors family. This device is designed for high-power applications, offering excellent electrical characteristics and reliability. It is packaged in a surface mount D2PAK (TO-263) case, making it suitable for a wide range of automotive and industrial applications.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)80V
Continuous Drain Current (ID)120A
Power Dissipation (Pd)324W
Gate to Source Voltage (Vgs)±20V
On-Resistance (Rds(on))See datasheet for detailed conditions
Gate Charge (Qg)See datasheet for detailed conditionsnC
PackageD2PAK (TO-263)
GradeAutomotive

Key Features

  • High continuous drain current of 120 A, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) for efficient power handling.
  • High power dissipation capability of 324 W.
  • Automotive grade, ensuring reliability and durability in demanding environments.
  • Surface mount D2PAK (TO-263) package for easy integration into various designs.

Applications

The BUK764R2-80E,118 is designed for use in a variety of high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and power steering systems.
  • Industrial power supplies and motor control systems.
  • Power conversion and switching applications.
  • High-performance audio and power amplifiers.

Q & A

  1. What is the maximum drain to source voltage of the BUK764R2-80E,118?
    The maximum drain to source voltage (Vdss) is 80 V.
  2. What is the continuous drain current of this MOSFET?
    The continuous drain current (ID) is 120 A.
  3. What is the power dissipation capability of this device?
    The power dissipation (Pd) is 324 W.
  4. What is the gate to source voltage range for this MOSFET?
    The gate to source voltage (Vgs) range is ±20 V.
  5. In what package is the BUK764R2-80E,118 available?
    The device is available in a surface mount D2PAK (TO-263) package.
  6. Is this MOSFET suitable for automotive applications?
    Yes, it is automotive grade, ensuring reliability and durability in demanding automotive environments.
  7. What are some typical applications for this MOSFET?
    Typical applications include automotive systems, industrial power supplies, motor control systems, power conversion, and high-performance audio and power amplifiers.
  8. Where can I find detailed specifications for the BUK764R2-80E,118?
    Detailed specifications can be found in the datasheet available on websites such as Digi-Key, Mouser, and the official Nexperia website.
  9. What is the significance of the '118' in the part number BUK764R2-80E,118?
    The '118' typically indicates the specific variant or packaging of the device.
  10. Is the BUK764R2-80E,118 available for immediate shipment?
    Yes, it is available for immediate shipment from various distributors such as Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:136 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10426 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):324W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.38
448

Please send RFQ , we will respond immediately.

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

BAS16/DG215
BAS16/DG215
NXP USA Inc.
RECTIFIER DIODE, 0.215A, 100V
BFS17W,135
BFS17W,135
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
MKE16Z64VLF4
MKE16Z64VLF4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48LQFP
MK10DX128VLH7
MK10DX128VLH7
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
74HCT4851PW/S400118
74HCT4851PW/S400118
NXP USA Inc.
SINGLE-ENDED MUX, 8 CHANNEL
AU5780AD/N,112
AU5780AD/N,112
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
PCA8574TS,118
PCA8574TS,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 20SSOP
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
PCA9420UKZ
PCA9420UKZ
NXP USA Inc.
POWER MANAGEMENT IC FOR LOW-POWE
MMPF0100F1AEPR2
MMPF0100F1AEPR2
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56HVQFN
UJA1061TW/5V0/C/T518
UJA1061TW/5V0/C/T518
NXP USA Inc.
FAULT-TOLERANT CAN/LIN FAIL-SAFE
PCF7961MTT/D1AC13J
PCF7961MTT/D1AC13J
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20TSSOP