BUK764R2-80E,118
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NXP USA Inc. BUK764R2-80E,118

Manufacturer No:
BUK764R2-80E,118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 80V 120A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The BUK764R2-80E,118 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc., which is a part of the NXP Semiconductors family. This device is designed for high-power applications, offering excellent electrical characteristics and reliability. It is packaged in a surface mount D2PAK (TO-263) case, making it suitable for a wide range of automotive and industrial applications.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)80V
Continuous Drain Current (ID)120A
Power Dissipation (Pd)324W
Gate to Source Voltage (Vgs)±20V
On-Resistance (Rds(on))See datasheet for detailed conditions
Gate Charge (Qg)See datasheet for detailed conditionsnC
PackageD2PAK (TO-263)
GradeAutomotive

Key Features

  • High continuous drain current of 120 A, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) for efficient power handling.
  • High power dissipation capability of 324 W.
  • Automotive grade, ensuring reliability and durability in demanding environments.
  • Surface mount D2PAK (TO-263) package for easy integration into various designs.

Applications

The BUK764R2-80E,118 is designed for use in a variety of high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and power steering systems.
  • Industrial power supplies and motor control systems.
  • Power conversion and switching applications.
  • High-performance audio and power amplifiers.

Q & A

  1. What is the maximum drain to source voltage of the BUK764R2-80E,118?
    The maximum drain to source voltage (Vdss) is 80 V.
  2. What is the continuous drain current of this MOSFET?
    The continuous drain current (ID) is 120 A.
  3. What is the power dissipation capability of this device?
    The power dissipation (Pd) is 324 W.
  4. What is the gate to source voltage range for this MOSFET?
    The gate to source voltage (Vgs) range is ±20 V.
  5. In what package is the BUK764R2-80E,118 available?
    The device is available in a surface mount D2PAK (TO-263) package.
  6. Is this MOSFET suitable for automotive applications?
    Yes, it is automotive grade, ensuring reliability and durability in demanding automotive environments.
  7. What are some typical applications for this MOSFET?
    Typical applications include automotive systems, industrial power supplies, motor control systems, power conversion, and high-performance audio and power amplifiers.
  8. Where can I find detailed specifications for the BUK764R2-80E,118?
    Detailed specifications can be found in the datasheet available on websites such as Digi-Key, Mouser, and the official Nexperia website.
  9. What is the significance of the '118' in the part number BUK764R2-80E,118?
    The '118' typically indicates the specific variant or packaging of the device.
  10. Is the BUK764R2-80E,118 available for immediate shipment?
    Yes, it is available for immediate shipment from various distributors such as Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:136 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10426 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):324W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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