BSS84AKT,115
  • Share:

NXP USA Inc. BSS84AKT,115

Manufacturer No:
BSS84AKT,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 150MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84AKT,115 is a P-channel Trench MOSFET produced by NXP USA Inc. This component is designed for a variety of applications requiring low on-resistance and high current handling. It features a compact SC-75 (SOT-416) package, making it suitable for space-constrained designs. The MOSFET is known for its high performance and reliability, making it a popular choice in various electronic circuits.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)50V
Continuous Drain Current (Id) @ 25°C150mA
On-Resistance (Rds On) @ Id, Vgs7.5Ω @ 100mA, 10V
Gate Threshold Voltage (Vgs(th)) @ Id2.1V @ 250µA
Input Capacitance (Ciss) @ Vds36pF @ 25V
Gate Charge (Qg) @ Vgs0.35nC @ 5V
Power Dissipation (Max)250mW (Ta), 770mW (Tc)mW
Operating Temperature-55°C ~ 150°C (TJ)°C
Package / CaseSC-75 (SOT-416)
Mounting TypeSurface Mount

Key Features

  • P-Channel Trench MOSFET with low on-resistance and high current handling.
  • Compact SC-75 (SOT-416) package suitable for space-constrained designs.
  • High performance and reliability.
  • Low gate threshold voltage for easy switching.
  • High input capacitance for stable operation.

Applications

The BSS84AKT,115 is versatile and can be used in a variety of applications, including:

  • Power switching and power management circuits.
  • Audio and video switching.
  • Motor control and drive circuits.
  • General-purpose switching in electronic devices.

Q & A

  1. What is the drain to source voltage (Vdss) of the BSS84AKT,115?
    The drain to source voltage (Vdss) is 50V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 150mA.
  3. What is the on-resistance (Rds On) of the BSS84AKT,115?
    The on-resistance (Rds On) is 7.5Ω at 100mA and 10V Vgs.
  4. What is the gate threshold voltage (Vgs(th)) of the BSS84AKT,115?
    The gate threshold voltage (Vgs(th)) is 2.1V at 250µA.
  5. What is the input capacitance (Ciss) of the BSS84AKT,115?
    The input capacitance (Ciss) is 36pF at 25V Vds.
  6. What is the gate charge (Qg) of the BSS84AKT,115?
    The gate charge (Qg) is 0.35nC at 5V Vgs.
  7. What is the maximum power dissipation of the BSS84AKT,115?
    The maximum power dissipation is 250mW (Ta) and 770mW (Tc).
  8. What is the operating temperature range of the BSS84AKT,115?
    The operating temperature range is -55°C to 150°C (TJ).
  9. What package type does the BSS84AKT,115 come in?
    The BSS84AKT,115 comes in an SC-75 (SOT-416) package.
  10. Is the BSS84AKT,115 suitable for surface mounting?
    Yes, the BSS84AKT,115 is suitable for surface mounting.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.35 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:36 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta), 770mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
0 Remaining View Similar

In Stock

-
87

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BSS84AKT,115 BSS84AKW,115
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 150mA (Ta) 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 100mA, 10V 7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.35 nC @ 5 V 0.35 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 36 pF @ 25 V 36 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 250mW (Ta), 770mW (Tc) 260mW (Ta), 830mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-75 SOT-323
Package / Case SC-75, SOT-416 SC-70, SOT-323

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

BAS216,115
BAS216,115
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
BZX84-C27/LF1VL
BZX84-C27/LF1VL
NXP USA Inc.
DIODE ZENER 27V 250MW TO236AB
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
BF908R,215
BF908R,215
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143
LPC1114FHN33/202,5
LPC1114FHN33/202,5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
MC9S12XEP100MAL
MC9S12XEP100MAL
NXP USA Inc.
IC MCU 16BIT 1MB FLASH 112LQFP
MCF52110CAE66
MCF52110CAE66
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
74LVC3G17DP-Q100125
74LVC3G17DP-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74AHCT1G04GW-Q100125
74AHCT1G04GW-Q100125
NXP USA Inc.
INVERTER, AHCT/VHCT/VT SERIES
PCA85133U/2DA/Q1Z
PCA85133U/2DA/Q1Z
NXP USA Inc.
IC DRVR 7 SEGMENT DIE
BGU6005115
BGU6005115
NXP USA Inc.
LOW NOISE AMPLIFIER MMIC