BS108,126
  • Share:

NXP USA Inc. BS108,126

Manufacturer No:
BS108,126
Manufacturer:
NXP USA Inc.
Package:
Tape & Box (TB)
Description:
MOSFET N-CH 200V 300MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BS108/01,126 is an N-Channel MOSFET produced by NXP USA Inc. This component is designed for various electronic applications requiring high reliability and performance. It features a voltage rating of 200V and a continuous drain current of 300mA, making it suitable for a range of power management and switching applications.

Key Specifications

Parameter Value Unit
Manufacturer NXP Semiconductors / Freescale
Part Number BS108/01,126
FET Type N-Channel
Drain to Source Voltage (Vdss) 200V V
Continuous Drain Current (Id) @ 25°C 300mA mA
Gate Threshold Voltage (Vgs(th)) @ Id 1.8V @ 1mA V @ mA
On-Resistance (Rds On) @ Id, Vgs 5 Ohm @ 100mA, 2.8V Ohm @ mA, V
Power Dissipation (Max) 1W (Ta) W
Operating Temperature -55°C ~ 150°C (TJ) °C
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 120pF @ 25V pF @ V

Key Features

  • High Voltage Rating: The BS108/01,126 has a drain to source voltage rating of 200V, making it suitable for high-voltage applications.
  • High Current Capability: It can handle a continuous drain current of 300mA, which is beneficial for power-intensive applications.
  • Low On-Resistance: With an on-resistance of 5 Ohms at 100mA and 2.8V, it minimizes power losses during operation.
  • Wide Operating Temperature Range: The component operates within a temperature range of -55°C to 150°C, ensuring reliability in various environmental conditions.
  • Lead-Free and RoHS Compliant: This MOSFET is lead-free and RoHS compliant, aligning with modern environmental and safety standards.

Applications

  • Power Management: Suitable for power supply circuits, voltage regulators, and DC-DC converters due to its high voltage and current ratings.
  • Switching Applications: Can be used in switching circuits, motor control, and other applications requiring high-speed switching.
  • Automotive Systems: Applicable in automotive systems where high reliability and performance are critical.
  • Industrial Control Systems: Used in industrial control systems for managing power and controlling various devices.

Q & A

  1. Q: What is the part number of this MOSFET?
    A: The part number is BS108/01,126.
  2. Q: Who is the manufacturer of the BS108/01,126?
    A: The manufacturer is NXP Semiconductors / Freescale.
  3. Q: What is the drain to source voltage rating of the BS108/01,126?
    A: The drain to source voltage rating is 200V.
  4. Q: What is the continuous drain current of the BS108/01,126 at 25°C?
    A: The continuous drain current is 300mA at 25°C.
  5. Q: What is the on-resistance of the BS108/01,126?
    A: The on-resistance is 5 Ohms at 100mA and 2.8V.
  6. Q: What is the operating temperature range of the BS108/01,126?
    A: The operating temperature range is -55°C to 150°C (TJ).
  7. Q: Is the BS108/01,126 lead-free and RoHS compliant?
    A: Yes, it is lead-free and RoHS compliant.
  8. Q: What are the typical applications of the BS108/01,126?
    A: It is used in power management, switching applications, automotive systems, and industrial control systems.
  9. Q: What is the package type of the BS108/01,126?
    A: The package types are TO-226-3 and TO-92-3 (TO-226AA) with formed leads.
  10. Q: Is the BS108/01,126 still in production?
    A: No, the BS108/01,126 is obsolete.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V
Rds On (Max) @ Id, Vgs:5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id:1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
0 Remaining View Similar

In Stock

-
210

Please send RFQ , we will respond immediately.

Same Series
BS108/01,126
BS108/01,126
MOSFET N-CH 200V 300MA TO92-3

Related Product By Categories

FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB

Related Product By Brand

AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
LPC2468FET208K
LPC2468FET208K
NXP USA Inc.
IC MCU 16/32BIT 512KB 208TFBGA
S9S12G64ACLH
S9S12G64ACLH
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 64LQFP
FS32K116LAT0MLFR
FS32K116LAT0MLFR
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
SCC2692AC1N40,602
SCC2692AC1N40,602
NXP USA Inc.
IC UART DUAL 40-DIP
74HC2G08DC/C125
74HC2G08DC/C125
NXP USA Inc.
IC GATE AND 2CH 2-INP 8VSSOP
MC33771BTA1AER2
MC33771BTA1AER2
NXP USA Inc.
14-CHANNEL LI-ION BATTERY CELL C
MC56F82723VLC557
MC56F82723VLC557
NXP USA Inc.
MICROCONTROLLER, 32-BIT, FLASH,
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX