BS108,126
  • Share:

NXP USA Inc. BS108,126

Manufacturer No:
BS108,126
Manufacturer:
NXP USA Inc.
Package:
Tape & Box (TB)
Description:
MOSFET N-CH 200V 300MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BS108/01,126 is an N-Channel MOSFET produced by NXP USA Inc. This component is designed for various electronic applications requiring high reliability and performance. It features a voltage rating of 200V and a continuous drain current of 300mA, making it suitable for a range of power management and switching applications.

Key Specifications

Parameter Value Unit
Manufacturer NXP Semiconductors / Freescale
Part Number BS108/01,126
FET Type N-Channel
Drain to Source Voltage (Vdss) 200V V
Continuous Drain Current (Id) @ 25°C 300mA mA
Gate Threshold Voltage (Vgs(th)) @ Id 1.8V @ 1mA V @ mA
On-Resistance (Rds On) @ Id, Vgs 5 Ohm @ 100mA, 2.8V Ohm @ mA, V
Power Dissipation (Max) 1W (Ta) W
Operating Temperature -55°C ~ 150°C (TJ) °C
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 120pF @ 25V pF @ V

Key Features

  • High Voltage Rating: The BS108/01,126 has a drain to source voltage rating of 200V, making it suitable for high-voltage applications.
  • High Current Capability: It can handle a continuous drain current of 300mA, which is beneficial for power-intensive applications.
  • Low On-Resistance: With an on-resistance of 5 Ohms at 100mA and 2.8V, it minimizes power losses during operation.
  • Wide Operating Temperature Range: The component operates within a temperature range of -55°C to 150°C, ensuring reliability in various environmental conditions.
  • Lead-Free and RoHS Compliant: This MOSFET is lead-free and RoHS compliant, aligning with modern environmental and safety standards.

Applications

  • Power Management: Suitable for power supply circuits, voltage regulators, and DC-DC converters due to its high voltage and current ratings.
  • Switching Applications: Can be used in switching circuits, motor control, and other applications requiring high-speed switching.
  • Automotive Systems: Applicable in automotive systems where high reliability and performance are critical.
  • Industrial Control Systems: Used in industrial control systems for managing power and controlling various devices.

Q & A

  1. Q: What is the part number of this MOSFET?
    A: The part number is BS108/01,126.
  2. Q: Who is the manufacturer of the BS108/01,126?
    A: The manufacturer is NXP Semiconductors / Freescale.
  3. Q: What is the drain to source voltage rating of the BS108/01,126?
    A: The drain to source voltage rating is 200V.
  4. Q: What is the continuous drain current of the BS108/01,126 at 25°C?
    A: The continuous drain current is 300mA at 25°C.
  5. Q: What is the on-resistance of the BS108/01,126?
    A: The on-resistance is 5 Ohms at 100mA and 2.8V.
  6. Q: What is the operating temperature range of the BS108/01,126?
    A: The operating temperature range is -55°C to 150°C (TJ).
  7. Q: Is the BS108/01,126 lead-free and RoHS compliant?
    A: Yes, it is lead-free and RoHS compliant.
  8. Q: What are the typical applications of the BS108/01,126?
    A: It is used in power management, switching applications, automotive systems, and industrial control systems.
  9. Q: What is the package type of the BS108/01,126?
    A: The package types are TO-226-3 and TO-92-3 (TO-226AA) with formed leads.
  10. Q: Is the BS108/01,126 still in production?
    A: No, the BS108/01,126 is obsolete.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V
Rds On (Max) @ Id, Vgs:5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id:1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
0 Remaining View Similar

In Stock

-
210

Please send RFQ , we will respond immediately.

Same Series
BS108/01,126
BS108/01,126
MOSFET N-CH 200V 300MA TO92-3

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

PDZ24B/ZLX
PDZ24B/ZLX
NXP USA Inc.
DIODE ZENER SOD323
PMBT3904/8,215
PMBT3904/8,215
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB
BUK7Y7R6-40E/GFX
BUK7Y7R6-40E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
SAF4000EL/101S500Y
SAF4000EL/101S500Y
NXP USA Inc.
SOFTWARE DEFINED RADIO
LPC1114FHN33/301:5
LPC1114FHN33/301:5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
S9S12G192F0VLHR
S9S12G192F0VLHR
NXP USA Inc.
IC MCU 16BIT 192KB FLASH 64LQFP
LPC1764FBD100,551
LPC1764FBD100,551
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 100LQFP
PCA9420UKZ
PCA9420UKZ
NXP USA Inc.
POWER MANAGEMENT IC FOR LOW-POWE
MWCT1013VLHSTR
MWCT1013VLHSTR
NXP USA Inc.
32BIT256K FLASHSTR CTM
JN5169-001-M06-2Z
JN5169-001-M06-2Z
NXP USA Inc.
RX TXRX MODULE 802.15.4 U.FL SMD
PCF7941ATSM2AB120,
PCF7941ATSM2AB120,
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20SSOP