Overview
The 2N7002BKV/DG/B2115 is a dual N-channel Trench MOSFET produced by Nexperia (formerly part of NXP). This component is designed for high-performance applications requiring low on-state resistance and high switching speeds. It is part of the 2N7002BK series, which is known for its reliability and suitability for various electronic systems, including automotive and industrial applications.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | - | - | 60 | V |
| Gate-Source Threshold Voltage | VGSth | 1.1 | 1.6 | 2.1 | V |
| Drain Leakage Current | IDSS | - | - | 10 | µA |
| Gate Leakage Current | IGSS | - | - | -10 | µA |
| Drain-Source On-State Resistance | RDSon | - | 1.3 | 2 | Ω |
| Maximum Drain Current | ID | - | - | 350 | mA |
| Maximum Power Dissipation | PD | - | - | 350 | mW |
| Package Type | - | - | - | SOT666 | - |
Key Features
- High Performance: The 2N7002BKV features low on-state resistance and high switching speeds, making it suitable for demanding applications.
- TrenchMOS Technology: Utilizes Nexperia's TrenchMOS technology for enhanced performance and efficiency.
- Automotive Qualified: Qualified according to the Automotive Electronics Council (AEC) standard Q101, making it suitable for automotive applications.
- Compact Package: Available in the SOT666 package, which is compact and suitable for surface mount applications.
- Low Gate Threshold Voltage: With a gate-source threshold voltage range of 1.1 to 2.1 V, it is easy to drive and control.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC Q101 qualification.
- Industrial Control: Used in industrial control systems where high reliability and performance are required.
- Power Management: Ideal for power management circuits, including DC-DC converters and power switches.
- Consumer Electronics: Can be used in consumer electronics for battery management, motor control, and other high-performance applications.
Q & A
- Q: What is the maximum drain-source breakdown voltage of the 2N7002BKV?
A: The maximum drain-source breakdown voltage is 60 V. - Q: What is the typical gate-source threshold voltage of the 2N7002BKV?
A: The typical gate-source threshold voltage is 1.6 V. - Q: What is the maximum drain current of the 2N7002BKV?
A: The maximum drain current is 350 mA. - Q: What package type is the 2N7002BKV available in?
A: It is available in the SOT666 package. - Q: Is the 2N7002BKV qualified for automotive applications?
A: Yes, it is qualified according to the Automotive Electronics Council (AEC) standard Q101. - Q: What is the typical drain-source on-state resistance of the 2N7002BKV?
A: The typical drain-source on-state resistance is 1.3 Ω. - Q: What is the maximum power dissipation of the 2N7002BKV?
A: The maximum power dissipation is 350 mW. - Q: What technology does the 2N7002BKV use?
A: It uses Nexperia's TrenchMOS technology. - Q: What are some common applications of the 2N7002BKV?
A: It is commonly used in automotive systems, industrial control, power management, and consumer electronics. - Q: What is the gate leakage current of the 2N7002BKV?
A: The gate leakage current is typically less than -10 µA.
