PSMN9R5-30YLC,115
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Nexperia USA Inc. PSMN9R5-30YLC,115

Manufacturer No:
PSMN9R5-30YLC,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 44A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN9R5-30YLC,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of the LFPAK56 and Power-SO8 package families, known for their compact size and high power handling capabilities. The MOSFET is designed for applications requiring high current and low on-resistance, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Part NumberPSMN9R5-30YLC,115
BrandNexperia USA Inc.
LifecycleActive
RoHSLead free / RoHS Compliant
CategoryDiscrete Semiconductor Products
SubcategoryTransistors - FETs, MOSFETs - Single
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.8 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs10.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds681pF @ 15V
Power Dissipation (Max)34W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

Key Features

  • High Current Capability: The MOSFET can handle a continuous drain current of up to 44A at 25°C.
  • Low On-Resistance: With a maximum on-resistance of 9.8 mOhm at 15A and 10V, this device minimizes power losses.
  • Wide Operating Temperature Range: The device operates from -55°C to 175°C, making it suitable for a variety of environmental conditions.
  • Compact Package: The LFPAK56 and Power-SO8 packages are designed for high power density and compact footprint.
  • Enhancement Mode: The MOSFET operates in enhancement mode, providing efficient switching characteristics.
  • RoHS Compliant: The device is lead-free and RoHS compliant, meeting environmental regulations.

Applications

The PSMN9R5-30YLC,115 is versatile and can be used in various applications, including:

  • Power Management: DC-DC converters, power supplies, and voltage regulators.
  • Motor Control: Motor drives, servo motors, and other high-current motor applications.
  • Switching Applications: High-frequency switching circuits, such as those found in audio amplifiers and power amplifiers.
  • Automotive Systems: Automotive power systems, including battery management and power distribution.
  • Industrial Control Systems: High-power industrial control systems requiring reliable and efficient switching.

Q & A

  1. What is the maximum continuous drain current of the PSMN9R5-30YLC,115? The maximum continuous drain current is 44A at 25°C.
  2. What is the maximum drain-source voltage (Vdss) of this MOSFET? The maximum drain-source voltage is 30V.
  3. What is the typical on-resistance (Rds On) of this device? The maximum on-resistance is 9.8 mOhm at 15A and 10V.
  4. What is the operating temperature range of the PSMN9R5-30YLC,115? The operating temperature range is from -55°C to 175°C.
  5. Is the PSMN9R5-30YLC,115 RoHS compliant? Yes, the device is lead-free and RoHS compliant.
  6. What is the package type of the PSMN9R5-30YLC,115? The device is available in LFPAK56 and Power-SO8 packages.
  7. What is the gate charge (Qg) of this MOSFET? The maximum gate charge is 10.4 nC at 10V.
  8. What is the maximum power dissipation of the PSMN9R5-30YLC,115? The maximum power dissipation is 34W (Tc).
  9. What is the mounting type of this device? The mounting type is surface mount.
  10. What are some common applications for the PSMN9R5-30YLC,115? Common applications include power management, motor control, switching applications, automotive systems, and industrial control systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:681 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):34W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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