Overview
The PSMN6R1-30YLDX is a logic level gate drive N-channel enhancement mode MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's NextPowerS3 portfolio, which utilizes the company's unique 'SchottkyPlus' technology. The MOSFET is packaged in the LFPAK56 format, known for its compact size and high performance. This device is designed to offer high efficiency and reliability in various power management applications.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Mode | Enhancement |
| Maximum Drain-Source Voltage (Vds) | 30 V |
| Maximum Continuous Drain Current (Id) | 66 A (at Tc) |
| On-State Resistance (Rds(on)) | 0.00505 ohm |
| Gate-Source Threshold Voltage (Vgs(th)) | 1.68 V |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | +175°C |
| Power Dissipation (Pd) | 47 W (at Tc) |
| Package Type | LFPAK56, Power-SO8 |
| RoHS Compliance | Yes |
Key Features
- High Efficiency: The 'SchottkyPlus' technology enhances the MOSFET's performance by reducing losses and improving thermal management.
- Compact Packaging: The LFPAK56 package is designed to be compact and thermally efficient, making it suitable for space-constrained applications.
- Logic Level Gate Drive: This feature allows for easy control with standard logic levels, simplifying the design process.
- High Current Capability: With a maximum continuous drain current of 66 A, this MOSFET is suitable for high-power applications.
- Wide Operating Temperature Range: The device can operate from -55°C to +175°C, making it versatile for various environmental conditions.
Applications
- Power Management Systems: Ideal for use in DC-DC converters, power supplies, and other power management circuits.
- Motor Control: Suitable for motor drive applications due to its high current handling and low on-state resistance.
- Automotive Systems: Can be used in automotive electronics such as battery management, power steering, and other high-power applications.
- Industrial Control Systems: Applicable in industrial control systems that require high reliability and efficiency.
Q & A
- What is the maximum drain-source voltage of the PSMN6R1-30YLDX MOSFET?
The maximum drain-source voltage (Vds) is 30 V.
- What is the on-state resistance (Rds(on)) of this MOSFET?
The on-state resistance (Rds(on)) is 0.00505 ohm.
- What is the gate-source threshold voltage (Vgs(th)) of the PSMN6R1-30YLDX?
The gate-source threshold voltage (Vgs(th)) is 1.68 V.
- What is the maximum continuous drain current (Id) of this MOSFET?
The maximum continuous drain current (Id) is 66 A at Tc.
- What is the power dissipation (Pd) of the PSMN6R1-30YLDX?
The power dissipation (Pd) is 47 W at Tc.
- What is the operating temperature range of the PSMN6R1-30YLDX MOSFET?
The operating temperature range is from -55°C to +175°C.
- Is the PSMN6R1-30YLDX RoHS compliant?
Yes, the PSMN6R1-30YLDX is RoHS compliant.
- What package type is used for the PSMN6R1-30YLDX?
The package type is LFPAK56, Power-SO8.
- What technology is used in the NextPowerS3 portfolio?
The NextPowerS3 portfolio utilizes Nexperia's unique 'SchottkyPlus' technology.
- What are some typical applications for the PSMN6R1-30YLDX MOSFET?
Typical applications include power management systems, motor control, automotive systems, and industrial control systems.
