Overview
The PSMN3R5-80PS,127 is an N-channel power MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's portfolio of high-performance MOSFETs, designed to offer low on-state resistance and high current handling capabilities. The PSMN3R5-80PS,127 is housed in a TO-220AB package, which is suitable for a variety of power management and switching applications. With its robust specifications and reliable performance, this MOSFET is ideal for use in industrial, automotive, and consumer electronics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VBR(DSS)) | 80 | V |
| Gate-Source Threshold Voltage (VGS(th)) | 1 | V |
| Continuous Drain Current (ID) | 120 | A |
| On-State Resistance (RDS(on)) | 3.5 mΩ | mΩ |
| Maximum Power Dissipation (PTOT) | 338 W | W |
| Junction Temperature Range | -55°C to 175°C | °C |
| Package Type | TO-220AB |
Key Features
- Low On-State Resistance: The PSMN3R5-80PS,127 features a low on-state resistance of 3.5 mΩ, which minimizes power losses and enhances efficiency in power switching applications.
- High Current Handling: With a continuous drain current of 120 A, this MOSFET is capable of handling high current demands, making it suitable for power-intensive applications.
- Wide Operating Temperature Range: The device operates over a junction temperature range of -55°C to 175°C, ensuring reliability in various environmental conditions.
- Robust Package: The TO-220AB package provides good thermal dissipation and mechanical stability, making it ideal for high-power applications.
Applications
- Power Management: Suitable for power supplies, DC-DC converters, and other power management systems due to its high current and low on-state resistance.
- Automotive Systems: Used in automotive applications such as motor control, battery management, and other high-power electronic systems.
- Industrial Electronics: Applicable in industrial control systems, motor drives, and power inverters.
- Consumer Electronics: Found in high-power consumer electronics such as power tools, gaming consoles, and other devices requiring efficient power switching.
Q & A
- What is the maximum drain-source breakdown voltage of the PSMN3R5-80PS,127?
The maximum drain-source breakdown voltage is 80 V.
- What is the typical on-state resistance of this MOSFET?
The typical on-state resistance is 3.5 mΩ.
- What is the continuous drain current rating of this device?
The continuous drain current rating is 120 A.
- What is the operating junction temperature range of the PSMN3R5-80PS,127?
The operating junction temperature range is -55°C to 175°C.
- What package type is used for the PSMN3R5-80PS,127?
The package type is TO-220AB.
- What are some common applications for this MOSFET?
Common applications include power management, automotive systems, industrial electronics, and consumer electronics.
- What is the gate-source threshold voltage of this MOSFET?
The gate-source threshold voltage is typically 1 V.
- How much power can this MOSFET dissipate?
The maximum power dissipation is 338 W.
- Is the PSMN3R5-80PS,127 suitable for high-power switching applications?
Yes, it is suitable due to its low on-state resistance and high current handling capabilities.
- Where can I find detailed specifications and datasheets for this component?
Detailed specifications and datasheets can be found on the official Nexperia website or through authorized distributors like Utmel, DigiPart, etc.
