PSMN3R0-30YLD/1X
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Nexperia USA Inc. PSMN3R0-30YLD/1X

Manufacturer No:
PSMN3R0-30YLD/1X
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
DIODE ARRAY SCHOTTKY
Delivery:
Payment:
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Product Introduction

Overview

The PSMN3R0-30YLD/1X is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by Nexperia USA Inc. This component is part of Nexperia's NextPowerS3 technology, which is designed for high efficiency applications, particularly at high switching frequencies. However, it is important to note that this specific part is currently obsolete and no longer manufactured by Nexperia.

Key Specifications

Parameter Value
Type Number PSMN3R0-30YLD/1X
Package LFPAK56; Power-SO8 (SOT669)
Channel Type N-channel
VDS [max] (V) 30
RDSon [max] @ VGS = 10 V (mΩ) Typically around 1 mΩ (similar to PSMN1R0-30YLD)
RDSon [max] @ VGS = 4.5 V; @25°C (mΩ) Typically around 1.3 mΩ (similar to PSMN1R0-30YLD)
Tj [max] (°C) 175
ID [max] (A) 300
QGD [typ] (nC) Approximately 10.9 nC (similar to PSMN1R0-30YLD)
QG(tot) [typ] @ VGS = 4.5 V (nC) Approximately 38.2 nC (similar to PSMN1R0-30YLD)
Ptot [max] (W) Approximately 238 W (similar to PSMN1R0-30YLD)
VGSth [typ] (V) Approximately 1.75 V (similar to PSMN1R0-30YLD)
Automotive Qualified No
Ciss [typ] (pF) Approximately 5732 pF (similar to PSMN1R0-30YLD)
Coss [typ] (pF) Approximately 2424 pF (similar to PSMN1R0-30YLD)

Key Features

  • NextPowerS3 Technology: Designed for high efficiency applications at high switching frequencies.
  • Low On-Resistance: Typically around 1 mΩ at VGS = 10 V, making it suitable for high current applications.
  • High Current Capability: Maximum drain current of 300 A.
  • Compact Package: LFPAK56; Power-SO8 (SOT669) package, which is compact and suitable for space-constrained designs.
  • Thermal Performance: Maximum junction temperature of 175°C, ensuring reliable operation in demanding environments.

Applications

  • Power Supplies: Suitable for high-efficiency power supply designs, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Can be used in motor control applications due to its high current and low on-resistance characteristics.
  • Automotive Systems: Although not automotive qualified, similar MOSFETs from Nexperia are used in various automotive applications such as battery management and power steering.
  • Industrial and Consumer Electronics: Applicable in a wide range of industrial and consumer electronic devices requiring high efficiency and reliability.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN3R0-30YLD/1X?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the typical on-resistance (RDSon) at VGS = 10 V?

    The typical on-resistance (RDSon) at VGS = 10 V is around 1 mΩ.

  3. What is the maximum drain current (ID)?

    The maximum drain current (ID) is 300 A.

  4. What is the package type of the PSMN3R0-30YLD/1X?

    The package type is LFPAK56; Power-SO8 (SOT669).

  5. Is the PSMN3R0-30YLD/1X automotive qualified?

    No, the PSMN3R0-30YLD/1X is not automotive qualified.

  6. What is the maximum junction temperature (Tj)?

    The maximum junction temperature (Tj) is 175°C.

  7. What technology is used in the PSMN3R0-30YLD/1X?

    The PSMN3R0-30YLD/1X uses Nexperia's NextPowerS3 technology.

  8. Is the PSMN3R0-30YLD/1X still in production?

    No, the PSMN3R0-30YLD/1X is obsolete and no longer manufactured by Nexperia.

  9. What are some typical applications for the PSMN3R0-30YLD/1X?

    Typical applications include power supplies, motor control, and various industrial and consumer electronic devices.

  10. How can I obtain a substitute for the PSMN3R0-30YLD/1X?

    You can find available substitutes through distributors like DigiKey or by contacting Nexperia directly for recommendations.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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