Overview
The PSMN2R6-40YS,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's Advanced TrenchMOS technology, offering low RDSon and low gate charge, which enhances efficiency in switching power converters. The MOSFET is packaged in the LFPAK56 (Power-SO8) package, providing maximum power density and improved mechanical and thermal characteristics.
Key Specifications
| Parameter | Value |
|---|---|
| Type number | PSMN2R6-40YS |
| Package | LFPAK56; Power-SO8 (SOT669) |
| Channel type | N |
| V DS [max] (V) | 40 |
| R DSon [max] @ V GS = 10 V (mΩ) | 2.8 |
| T j [max] (°C) | 175 |
| I D [max] (A) | 100 |
| Q GD [typ] (nC) | 14 |
| Q G(tot) [typ] @ V GS = 10 V (nC) | 63 |
| P tot [max] (W) | 131 |
| Q r [typ] (nC) | 47 |
| V GSth [typ] (V) | 3 |
| Automotive qualified | No |
| C iss [typ] (pF) | 3776 |
| C oss [typ] (pF) | 948 |
Key Features
- Advanced TrenchMOS technology for low RDSon and low gate charge.
- High efficiency gains in switching power converters.
- Improved mechanical and thermal characteristics.
- LFPAK56 (Power-SO8) package for maximum power density.
- Surface mount design for ease of integration.
Applications
- DC-to-DC converters.
- Lithium-ion battery protection.
- Load switching.
- Motor control.
- Server power supplies.
Q & A
- What is the maximum drain-source voltage (V DS) of the PSMN2R6-40YS,115 MOSFET?
The maximum drain-source voltage (V DS) is 40 V. - What is the typical on-resistance (R DSon) at V GS = 10 V?
The typical on-resistance (R DSon) at V GS = 10 V is 2.8 mΩ. - What is the maximum junction temperature (T j) of the MOSFET?
The maximum junction temperature (T j) is 175°C. - What is the maximum continuous drain current (I D) of the MOSFET?
The maximum continuous drain current (I D) is 100 A. - What package type is used for the PSMN2R6-40YS,115 MOSFET?
The package type is LFPAK56 (Power-SO8). - Is the PSMN2R6-40YS,115 MOSFET automotive qualified?
No, the PSMN2R6-40YS,115 MOSFET is not automotive qualified. - What are some common applications of the PSMN2R6-40YS,115 MOSFET?
Common applications include DC-to-DC converters, lithium-ion battery protection, load switching, motor control, and server power supplies. - What is the typical gate-source threshold voltage (V GSth) of the MOSFET?
The typical gate-source threshold voltage (V GSth) is 3 V. - What is the maximum total power dissipation (P tot) of the MOSFET?
The maximum total power dissipation (P tot) is 131 W. - Where can I find detailed specifications and datasheets for the PSMN2R6-40YS,115 MOSFET?
Detailed specifications and datasheets can be found on the Nexperia website, Digi-Key, and other authorized distributors.
