Overview
The PSMN1R0-40YLD/1X, produced by Nexperia USA Inc., is a high-performance N-channel MOSFET designed for advanced power switching applications. This device utilizes Nexperia's NextPower-S3 Schottky-Plus technology, which offers superior efficiency and reliability. The MOSFET is housed in the LFPAK56 (Power-SO8) package, known for its high reliability and thermal performance. With a maximum drain-source voltage of 40 V and an on-resistance of 1.1 mΩ, this MOSFET is suitable for a wide range of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | PSMN1R0-40YLD | - |
| Package | LFPAK56; Power-SO8 (SOT1023) | - |
| Channel Type | N-channel | - |
| VDS (max) | 40 | V |
| RDSon (max) @ VGS = 10 V | 1.1 | mΩ |
| RDSon (max) @ VGS = 4.5 V; @25°C | 1.4 | mΩ |
| Tj (max) | 175 | °C |
| ID (max) | 280 | A |
| QGD (typ) | 17 | nC |
| QG(tot) (typ) @ VGS = 4.5 V | 59 | nC |
| Ptot (max) | - | W |
Key Features
- NextPower-S3 Schottky-Plus Technology: Offers superfast switching with soft recovery, low QRR, QG, and QGD for high system efficiency and low EMI designs.
- High Current Capability: 280 A continuous current, limited by PCB, thermal design, and operation temperature.
- Low On-Resistance: 1.1 mΩ at VGS = 10 V.
- High Reliability Package: LFPAK56 (Power-SO8) package with copper-clip, solder die attach, and qualified to 175°C.
- Optimized for 4.5 V Gate Drive: Utilizing NextPower-S3 Superjunction technology for efficient operation.
- Low Parasitic Inductance and Resistance: Suitable for high-frequency applications.
- Schottky-Plus Body-Diode: Provides soft switching without high IDSS leakage.
Applications
- DC-to-DC Converters: High-efficiency power conversion.
- High Performance Server Power Supply: Optimized for high-power server applications.
- Motor Control: Suitable for motor drive applications requiring high current and efficiency.
- Power OR-ing: Used in power distribution and redundancy systems.
- Synchronous Rectification: Enhances efficiency in rectification circuits.
Q & A
- What is the maximum drain-source voltage of the PSMN1R0-40YLD?
The maximum drain-source voltage (VDS) is 40 V.
- What is the on-resistance of the PSMN1R0-40YLD at VGS = 10 V?
The on-resistance (RDSon) is 1.1 mΩ at VGS = 10 V.
- What is the maximum junction temperature of the PSMN1R0-40YLD?
The maximum junction temperature (Tj) is 175°C.
- What is the maximum continuous current of the PSMN1R0-40YLD?
The maximum continuous current (ID) is 280 A, limited by PCB, thermal design, and operation temperature.
- What technology does the PSMN1R0-40YLD use?
The PSMN1R0-40YLD uses Nexperia's NextPower-S3 Schottky-Plus technology.
- What package type is the PSMN1R0-40YLD available in?
The PSMN1R0-40YLD is available in the LFPAK56 (Power-SO8) package.
- Is the PSMN1R0-40YLD optimized for low gate drive voltages?
Yes, it is optimized for 4.5 V gate drive utilizing NextPower-S3 Superjunction technology.
- What are some typical applications of the PSMN1R0-40YLD?
Typical applications include DC-to-DC converters, high-performance server power supplies, motor control, power OR-ing, and synchronous rectification.
- Does the PSMN1R0-40YLD have a Schottky-Plus body-diode?
Yes, it features a Schottky-Plus body-diode for soft switching without high IDSS leakage.
- Is the PSMN1R0-40YLD suitable for high-frequency applications?
Yes, it has low parasitic inductance and resistance, making it suitable for high-frequency applications.
