PSMN0R9-30YLDX
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Nexperia USA Inc. PSMN0R9-30YLDX

Manufacturer No:
PSMN0R9-30YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 300A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The PSMN0R9-30YLDX is a N-channel power MOSFET transistor manufactured by Nexperia USA Inc. This component is part of Nexperia's NextPowerS3 portfolio, which utilizes NXP's unique 'SchottkyPlus' technology. This technology enhances the performance of the MOSFET by combining the benefits of a MOSFET and a Schottky diode, resulting in improved efficiency and reduced losses.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)30 V
Drain Current (Id)190 A
On-State Resistance (Rds(on))0.9 mΩ
Gate-Source Threshold Voltage (Vgs(th))1.2 - 2.5 V
PackageLFPAK56
Operating Temperature Range-55°C to 150°C

Key Features

  • Logic level gate drive, making it compatible with a wide range of control signals.
  • Low on-state resistance (Rds(on)) of 0.9 mΩ, reducing power losses and improving efficiency.
  • High drain current (Id) of 190 A, suitable for high-power applications.
  • 'SchottkyPlus' technology, combining the benefits of a MOSFET and a Schottky diode for enhanced performance.
  • Compact LFPAK56 package, offering a balance between thermal performance and space efficiency.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the drain-source voltage rating of the PSMN0R9-30YLDX MOSFET? The drain-source voltage rating is 30 V.
  2. What is the maximum drain current of the PSMN0R9-30YLDX? The maximum drain current is 190 A.
  3. What is the on-state resistance (Rds(on)) of the PSMN0R9-30YLDX? The on-state resistance is 0.9 mΩ.
  4. What package type is used for the PSMN0R9-30YLDX? The component is packaged in LFPAK56.
  5. What is the operating temperature range of the PSMN0R9-30YLDX? The operating temperature range is -55°C to 150°C.
  6. What technology does the PSMN0R9-30YLDX utilize? It utilizes NXP's unique 'SchottkyPlus' technology.
  7. Is the PSMN0R9-30YLDX suitable for high-power applications? Yes, it is suitable for high-power applications due to its high drain current and low on-state resistance.
  8. Can the PSMN0R9-30YLDX be used in automotive systems? Yes, it can be used in automotive systems, including electric and hybrid vehicles.
  9. What are some common applications of the PSMN0R9-30YLDX? Common applications include power supplies, motor control systems, industrial automation, and renewable energy systems.
  10. Is the gate drive of the PSMN0R9-30YLDX logic level? Yes, the gate drive is logic level, making it compatible with a wide range of control signals.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:109 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7668 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):291W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56; Power-SO8
Package / Case:SOT-1023, 4-LFPAK
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Similar Products

Part Number PSMN0R9-30YLDX PSMN0R9-30ULDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 300A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.87mOhm @ 25A, 10V 0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 109 nC @ 10 V 109 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7668 pF @ 15 V 7668 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 291W 227W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56; Power-SO8 LFPAK56, Power-SO8
Package / Case SOT-1023, 4-LFPAK SOT-1023, 4-LFPAK

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