PSMN0R9-30YLDX
  • Share:

Nexperia USA Inc. PSMN0R9-30YLDX

Manufacturer No:
PSMN0R9-30YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 300A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN0R9-30YLDX is a N-channel power MOSFET transistor manufactured by Nexperia USA Inc. This component is part of Nexperia's NextPowerS3 portfolio, which utilizes NXP's unique 'SchottkyPlus' technology. This technology enhances the performance of the MOSFET by combining the benefits of a MOSFET and a Schottky diode, resulting in improved efficiency and reduced losses.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)30 V
Drain Current (Id)190 A
On-State Resistance (Rds(on))0.9 mΩ
Gate-Source Threshold Voltage (Vgs(th))1.2 - 2.5 V
PackageLFPAK56
Operating Temperature Range-55°C to 150°C

Key Features

  • Logic level gate drive, making it compatible with a wide range of control signals.
  • Low on-state resistance (Rds(on)) of 0.9 mΩ, reducing power losses and improving efficiency.
  • High drain current (Id) of 190 A, suitable for high-power applications.
  • 'SchottkyPlus' technology, combining the benefits of a MOSFET and a Schottky diode for enhanced performance.
  • Compact LFPAK56 package, offering a balance between thermal performance and space efficiency.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the drain-source voltage rating of the PSMN0R9-30YLDX MOSFET? The drain-source voltage rating is 30 V.
  2. What is the maximum drain current of the PSMN0R9-30YLDX? The maximum drain current is 190 A.
  3. What is the on-state resistance (Rds(on)) of the PSMN0R9-30YLDX? The on-state resistance is 0.9 mΩ.
  4. What package type is used for the PSMN0R9-30YLDX? The component is packaged in LFPAK56.
  5. What is the operating temperature range of the PSMN0R9-30YLDX? The operating temperature range is -55°C to 150°C.
  6. What technology does the PSMN0R9-30YLDX utilize? It utilizes NXP's unique 'SchottkyPlus' technology.
  7. Is the PSMN0R9-30YLDX suitable for high-power applications? Yes, it is suitable for high-power applications due to its high drain current and low on-state resistance.
  8. Can the PSMN0R9-30YLDX be used in automotive systems? Yes, it can be used in automotive systems, including electric and hybrid vehicles.
  9. What are some common applications of the PSMN0R9-30YLDX? Common applications include power supplies, motor control systems, industrial automation, and renewable energy systems.
  10. Is the gate drive of the PSMN0R9-30YLDX logic level? Yes, the gate drive is logic level, making it compatible with a wide range of control signals.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:109 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7668 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):291W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56; Power-SO8
Package / Case:SOT-1023, 4-LFPAK
0 Remaining View Similar

In Stock

$2.62
22

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN0R9-30YLDX PSMN0R9-30ULDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 300A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.87mOhm @ 25A, 10V 0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 109 nC @ 10 V 109 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7668 pF @ 15 V 7668 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 291W 227W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56; Power-SO8 LFPAK56, Power-SO8
Package / Case SOT-1023, 4-LFPAK SOT-1023, 4-LFPAK

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

BAS16J,135
BAS16J,135
Nexperia USA Inc.
DIODE GP 100V 250MA SOD323F
BC847BPN/DG/B2,115
BC847BPN/DG/B2,115
Nexperia USA Inc.
TRANS GEN PURPOSE SC-88
PMBT3906M,315
PMBT3906M,315
Nexperia USA Inc.
TRANS PNP 40V 0.2A SOT883
BCX54-16TF
BCX54-16TF
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
BC859CW/ZLF
BC859CW/ZLF
Nexperia USA Inc.
TRANS SOT323
PDTC123JT,215
PDTC123JT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
74HCT245D,652
74HCT245D,652
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74AHCT1G04GW-Q100H
74AHCT1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP
74AHC573D,118
74AHC573D,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20SOIC
CBTD16210DGG,112
CBTD16210DGG,112
Nexperia USA Inc.
IC BUS SWITCH 10 X 1:1 48TSSOP
NXB0108PWJ
NXB0108PWJ
Nexperia USA Inc.
NXB0108PW/SOT360/TSSOP20