PSMN0R9-30YLDX
  • Share:

Nexperia USA Inc. PSMN0R9-30YLDX

Manufacturer No:
PSMN0R9-30YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 300A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN0R9-30YLDX is a N-channel power MOSFET transistor manufactured by Nexperia USA Inc. This component is part of Nexperia's NextPowerS3 portfolio, which utilizes NXP's unique 'SchottkyPlus' technology. This technology enhances the performance of the MOSFET by combining the benefits of a MOSFET and a Schottky diode, resulting in improved efficiency and reduced losses.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)30 V
Drain Current (Id)190 A
On-State Resistance (Rds(on))0.9 mΩ
Gate-Source Threshold Voltage (Vgs(th))1.2 - 2.5 V
PackageLFPAK56
Operating Temperature Range-55°C to 150°C

Key Features

  • Logic level gate drive, making it compatible with a wide range of control signals.
  • Low on-state resistance (Rds(on)) of 0.9 mΩ, reducing power losses and improving efficiency.
  • High drain current (Id) of 190 A, suitable for high-power applications.
  • 'SchottkyPlus' technology, combining the benefits of a MOSFET and a Schottky diode for enhanced performance.
  • Compact LFPAK56 package, offering a balance between thermal performance and space efficiency.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the drain-source voltage rating of the PSMN0R9-30YLDX MOSFET? The drain-source voltage rating is 30 V.
  2. What is the maximum drain current of the PSMN0R9-30YLDX? The maximum drain current is 190 A.
  3. What is the on-state resistance (Rds(on)) of the PSMN0R9-30YLDX? The on-state resistance is 0.9 mΩ.
  4. What package type is used for the PSMN0R9-30YLDX? The component is packaged in LFPAK56.
  5. What is the operating temperature range of the PSMN0R9-30YLDX? The operating temperature range is -55°C to 150°C.
  6. What technology does the PSMN0R9-30YLDX utilize? It utilizes NXP's unique 'SchottkyPlus' technology.
  7. Is the PSMN0R9-30YLDX suitable for high-power applications? Yes, it is suitable for high-power applications due to its high drain current and low on-state resistance.
  8. Can the PSMN0R9-30YLDX be used in automotive systems? Yes, it can be used in automotive systems, including electric and hybrid vehicles.
  9. What are some common applications of the PSMN0R9-30YLDX? Common applications include power supplies, motor control systems, industrial automation, and renewable energy systems.
  10. Is the gate drive of the PSMN0R9-30YLDX logic level? Yes, the gate drive is logic level, making it compatible with a wide range of control signals.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:109 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7668 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):291W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56; Power-SO8
Package / Case:SOT-1023, 4-LFPAK
0 Remaining View Similar

In Stock

$2.62
22

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN0R9-30YLDX PSMN0R9-30ULDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 300A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.87mOhm @ 25A, 10V 0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 109 nC @ 10 V 109 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7668 pF @ 15 V 7668 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 291W 227W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56; Power-SO8 LFPAK56, Power-SO8
Package / Case SOT-1023, 4-LFPAK SOT-1023, 4-LFPAK

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
PMEG3010BEAZ
PMEG3010BEAZ
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1A SOD323
BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
PBSS4540Z,115
PBSS4540Z,115
Nexperia USA Inc.
TRANS NPN 40V 5A SOT223
BC857CQAZ
BC857CQAZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1010D-3
BC859CW/ZLF
BC859CW/ZLF
Nexperia USA Inc.
TRANS SOT323
HEF4067BT,652
HEF4067BT,652
Nexperia USA Inc.
IC MUX/DEMUX 4X16 24SOIC
74HC244D,652
74HC244D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74LV4060PW-Q100J
74LV4060PW-Q100J
Nexperia USA Inc.
IC COUNTER 14STAGE BIN 16TSSOP
74AHC273PW,112
74AHC273PW,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20TSSOP
74HC11DB,118-NEX
74HC11DB,118-NEX
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SSOP