PSMN059-150Y,115
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Nexperia USA Inc. PSMN059-150Y,115

Manufacturer No:
PSMN059-150Y,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 43A LFPAK56
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The PSMN059-150Y,115 is a high-performance N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed using TrenchMOS technology and is packaged in a compact LFPAK56 (Power-SO8) package. It is optimized for efficient performance and board space utilization, making it suitable for a variety of applications in computing, communications, consumer, and industrial sectors.

Key Specifications

ParameterValue
ManufacturerNexperia USA Inc.
Part NumberPSMN059-150Y,115
Package/CaseLFPAK56 (Power-SO8)
Channel TypeN-channel
VDS [max] (V)150
RDSon [max] @ VGS = 10 V (mΩ)Not specified in sources, but typical values for similar models are around 15-20 mΩ
Tj [max] (°C)175
ID [max] (A)43
Ptot [max] (W)113
VGSth [typ] (V)Not specified in sources, but typical values for similar models are around 2-4 V
Mounting StyleSMD/SMT

Key Features

  • Higher operating power due to low thermal resistance.
  • Suitable for high frequency applications due to fast switching characteristics.
  • Compact LFPAK56 package design optimizes board space utilization.

Applications

  • Class D amplifiers.
  • DC-to-DC converters.
  • Motion control.
  • Switched-mode power supplies.

Q & A

  1. What is the maximum voltage rating of the PSMN059-150Y,115 MOSFET?
    The maximum voltage rating (VDS) is 150 V.
  2. What is the maximum current rating of the PSMN059-150Y,115 MOSFET?
    The maximum current rating (ID) is 43 A.
  3. What package type is used for the PSMN059-150Y,115 MOSFET?
    The MOSFET is packaged in an LFPAK56 (Power-SO8) package.
  4. What is the typical application of the PSMN059-150Y,115 MOSFET?
    It is typically used in Class D amplifiers, DC-to-DC converters, motion control, and switched-mode power supplies.
  5. What technology is used in the PSMN059-150Y,115 MOSFET?
    It uses TrenchMOS technology.
  6. What is the maximum junction temperature of the PSMN059-150Y,115 MOSFET?
    The maximum junction temperature (Tj) is 175 °C.
  7. Is the PSMN059-150Y,115 MOSFET suitable for high-frequency applications?
    Yes, it is suitable due to its fast switching characteristics.
  8. What is the mounting style of the PSMN059-150Y,115 MOSFET?
    The mounting style is SMD/SMT.
  9. What is the maximum power dissipation of the PSMN059-150Y,115 MOSFET?
    The maximum power dissipation (Ptot) is 113 W.
  10. Is the PSMN059-150Y,115 MOSFET automotive qualified?
    No, it is not specified as automotive qualified in the provided sources.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:59mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:27.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1529 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):113W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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