Overview
The PSMN040-100MSEX is an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Nexperia USA Inc. This component is specifically designed for high power Power-over-Ethernet (PoE) applications. It features a standard level MOSFET in the LFPAK33 package, which is known for its compact size and high power density. The PSMN040-100MSEX is part of Nexperia’s extensive portfolio of power MOSFETs, which are used across various industries including automotive, industrial, power, computing, and consumer electronics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 100 | V |
| Continuous Drain Current (Id) @ 25°C | 30 | A |
| On-State Resistance (Rds(on)) @ Vgs = 10 V | 36.6 | mΩ |
| Maximum Junction Temperature (Tj) | 175 | °C |
| Gate Threshold Voltage (Vgs(th)) | 3.3 | V |
| Total Gate Charge (Qg(tot)) @ Vgs = 10 V | 30 | nC |
| Input Capacitance (Ciss) | 1470 | pF |
| Output Capacitance (Coss) | 110 | pF |
| Package Type | LFPAK33 (SOT1210) |
Key Features
- High Power Handling: Designed for high power PoE applications, capable of delivering up to 90W to each powered device (PD).
- Low On-State Resistance: Features a low Rds(on) of 36.6 mΩ, which minimizes power losses and enhances efficiency.
- Compact Package: The LFPAK33 package offers high power density in a compact form factor, making it ideal for space-constrained designs.
- Thermal Management: Optimized for thermal performance, with guidelines provided in application notes for thermal design.
- Reliability and Durability: Ensures robust performance with features like soft-start and repetitive avalanche ruggedness).
Applications
- Power-over-Ethernet (PoE): Specifically designed for high power PoE systems, enabling the delivery of up to 90W to powered devices).
- Automotive and Industrial Systems: Used in various automotive and industrial applications due to its high reliability and performance).
- Power and Computing Systems: Suitable for power supplies, DC-DC converters, and other computing applications requiring high power handling and efficiency).
- Consumer Electronics: Found in consumer electronics such as mobile devices, wearables, and other power-sensitive applications).
Q & A
- What is the maximum drain to source voltage (Vdss) of the PSMN040-100MSEX?
100 V.
- What is the continuous drain current (Id) rating at 25°C?
30 A.
- What is the on-state resistance (Rds(on)) of the PSMN040-100MSEX at Vgs = 10 V?
36.6 mΩ.
- What is the maximum junction temperature (Tj) for this MOSFET?
175 °C.
- What package type is used for the PSMN040-100MSEX?
LFPAK33 (SOT1210).
- Is the PSMN040-100MSEX suitable for high power PoE applications?
- What are some of the key features of the PSMN040-100MSEX?
High power handling, low on-state resistance, compact package, and robust thermal management.
- What industries can the PSMN040-100MSEX be used in?
Automotive, industrial, power, computing, and consumer electronics.
- Is the PSMN040-100MSEX automotive qualified?
No, it is not automotive qualified.
- Where can I find detailed specifications and application notes for the PSMN040-100MSEX?
Detailed specifications and application notes can be found on the Nexperia website and through distributors like Mouser and Digi-Key.
