PSMN030-60YS,115
  • Share:

Nexperia USA Inc. PSMN030-60YS,115

Manufacturer No:
PSMN030-60YS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 29A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN030-60YS,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This component is designed for use in a variety of applications requiring high power handling and efficiency. It features the LFPAK56 (Power-SO8) package, which is known for its compact size and excellent thermal performance.

Key Specifications

ParameterValue
Voltage Rating (Vds)60 V
Continuous Drain Current (Id)29 A (Tc)
Power Dissipation (Pd)56 W (Tc)
Package TypeLFPAK56, Power-SO8
Operating TemperatureQualified to 150°C or 175°C

Key Features

  • High continuous drain current of 29 A (Tc)
  • High power dissipation of 56 W (Tc)
  • Compact LFPAK56 (Power-SO8) package for excellent thermal performance
  • Qualified to operate at temperatures up to 150°C or 175°C
  • Enhancement mode operation

Applications

The PSMN030-60YS,115 is designed and qualified for use in a wide range of applications, including:

  • DC-to-DC converters
  • Lithium-ion battery protection
  • Load switching
  • Server power supplies
  • Domestic equipment

Q & A

  1. What is the voltage rating of the PSMN030-60YS,115 MOSFET? The voltage rating is 60 V.
  2. What is the continuous drain current of the PSMN030-60YS,115? The continuous drain current is 29 A (Tc).
  3. What package type does the PSMN030-60YS,115 use? It uses the LFPAK56 (Power-SO8) package.
  4. What are the typical applications for the PSMN030-60YS,115? Typical applications include DC-to-DC converters, lithium-ion battery protection, load switching, server power supplies, and domestic equipment.
  5. What is the maximum operating temperature for the PSMN030-60YS,115? It is qualified to operate at temperatures up to 150°C or 175°C.
  6. What is the power dissipation of the PSMN030-60YS,115? The power dissipation is 56 W (Tc).
  7. Is the PSMN030-60YS,115 an enhancement mode MOSFET? Yes, it is an enhancement mode MOSFET.
  8. Why is the LFPAK56 package used for the PSMN030-60YS,115? The LFPAK56 package is used for its compact size and excellent thermal performance.
  9. Where can I find detailed specifications for the PSMN030-60YS,115? Detailed specifications can be found in the full data sheet available from Nexperia's sales office or on authorized distributor websites.
  10. Is the PSMN030-60YS,115 suitable for high-power applications? Yes, it is designed for high-power applications due to its high continuous drain current and power dissipation capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:686 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):56W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$0.90
828

Please send RFQ , we will respond immediately.

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAT54A,235
BAT54A,235
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BZT52H-B20,115
BZT52H-B20,115
Nexperia USA Inc.
DIODE ZENER 20V 375MW SOD123F
PDZ20BF
PDZ20BF
Nexperia USA Inc.
DIODE ZENER 20.39V 400MW SOD323
BZX84-C8V2/DG/B4R
BZX84-C8V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
BCX56-10,135
BCX56-10,135
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
PBSS304NXZ
PBSS304NXZ
Nexperia USA Inc.
PBSS304NX/SOT89/MPT3
PDTA114EU,115
PDTA114EU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
BSH111,215
BSH111,215
Nexperia USA Inc.
MOSFET N-CH 55V 335MA TO236AB
74LVC1G00GW-Q100H
74LVC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74HC04D-Q100,118
74HC04D-Q100,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO