Overview
The PSMN014-40YS,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of the LFPAK56 package series, known for its compact size and high power handling capabilities. The MOSFET is designed for use in a variety of power management and switching applications, offering a balance of low on-resistance, high current handling, and robust thermal performance.
Key Specifications
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Channel Type | N-Channel |
| Maximum Continuous Drain Current | 46 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | LFPAK, SOT-669 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4 V |
| Minimum Gate Threshold Voltage | 2 V |
| Maximum Power Dissipation | 56 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.1 mm |
| Length | 5 mm |
| Height | 1.1 mm |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
Key Features
- High Current Handling: The PSMN014-40YS,115 can handle a maximum continuous drain current of 46 A, making it suitable for high-power applications.
- Low On-Resistance: With a maximum drain source resistance of 20 mΩ, this MOSFET minimizes power losses and enhances efficiency.
- Compact Package: The LFPAK56 package is designed to be compact and thermally efficient, making it ideal for space-constrained designs.
- Enhancement Mode: The enhancement mode operation allows for precise control over the MOSFET, making it suitable for a wide range of switching applications.
- Robust Thermal Performance: The device can operate within a temperature range of -55 °C to +175 °C, ensuring reliability in various environmental conditions.
Applications
- Power Management: Suitable for use in power supplies, DC-DC converters, and other power management circuits.
- Motor Control: Can be used in motor drive applications due to its high current handling and low on-resistance.
- Switching Circuits: Ideal for use in high-frequency switching circuits, such as those found in audio amplifiers and other electronic devices.
- Automotive Systems: The robust thermal performance and high reliability make it suitable for use in automotive systems.
Q & A
- What is the maximum continuous drain current of the PSMN014-40YS,115?
The maximum continuous drain current is 46 A.
- What is the maximum drain source voltage of this MOSFET?
The maximum drain source voltage is 40 V.
- What type of package does the PSMN014-40YS,115 use?
The device uses the LFPAK56 package, also known as SOT-669.
- What is the typical gate charge at Vgs = 10 V?
The typical gate charge at Vgs = 10 V is 12 nC.
- What is the operating temperature range of the PSMN014-40YS,115?
The operating temperature range is from -55 °C to +175 °C.
- What is the maximum power dissipation of this MOSFET?
The maximum power dissipation is 56 W.
- Is the PSMN014-40YS,115 suitable for high-frequency switching applications?
Yes, it is suitable due to its low on-resistance and high current handling capabilities.
- What is the channel mode of the PSMN014-40YS,115?
The channel mode is enhancement mode.
- What is the maximum gate source voltage for this MOSFET?
The maximum gate source voltage is -20 V to +20 V.
- What are some common applications of the PSMN014-40YS,115?
Common applications include power management, motor control, switching circuits, and automotive systems.
