PSMN013-100PS,127
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Nexperia USA Inc. PSMN013-100PS,127

Manufacturer No:
PSMN013-100PS,127
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Description:
MOSFET N-CH 100V 68A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The PSMN013-100PS,127 is a discrete semiconductor product manufactured by Nexperia USA Inc. However, it is important to note that this component is currently obsolete and no longer in production. Despite its obsolescence, it remains relevant for understanding historical semiconductor technology and for finding suitable replacements in existing designs.

Key Specifications

ParameterValue
Part NumberPSMN013-100PS,127
ManufacturerNexperia USA Inc.
Lifecycle StatusObsolete
Package TypeTO-220
Vds (Drain-Source Voltage)100 V
Id (Continuous Drain Current)13 A
Rds(on) (On-State Resistance)Typically around 13 mΩ (exact value may vary, refer to datasheet)
Vgs(th) (Threshold Voltage)Typically around 2-4 V (exact value may vary, refer to datasheet)

Key Features

  • High current handling capability up to 13 A.
  • Low on-state resistance (Rds(on)) for efficient power handling.
  • High drain-source voltage (Vds) rating of 100 V.
  • TO-220 package for good thermal performance and ease of mounting.
  • Suitable for high-power switching applications.

Applications

The PSMN013-100PS,127 was designed for high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems requiring high current and voltage handling.

Q & A

  1. What is the part number of this component?
    The part number is PSMN013-100PS,127.
  2. Who is the manufacturer of this component?
    The manufacturer is Nexperia USA Inc.
  3. What is the current lifecycle status of this component?
    This component is obsolete and no longer in production.
  4. What is the maximum continuous drain current (Id) of this component?
    The maximum continuous drain current is 13 A.
  5. What is the typical on-state resistance (Rds(on)) of this component?
    The typical on-state resistance is around 13 mΩ, but refer to the datasheet for exact values.
  6. What is the package type of this component?
    The package type is TO-220.
  7. What are the typical applications for this component?
    Typical applications include power supplies, motor control systems, industrial automation, and automotive systems.
  8. Why is this component no longer manufactured?
    This component is obsolete, likely due to advancements in technology and the availability of more efficient or cost-effective alternatives.
  9. Where can I find substitutes for this component?
    Substitutes can be found through distributors like Digi-Key and Mouser, which often list similar or replacement parts.
  10. How can I obtain the datasheet for this component?
    The datasheet can be obtained from the manufacturer's website or through distributor websites like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3195 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number PSMN013-100PS,127 PSMN016-100PS,127 PSMN013-100XS,127 PSMN013-100ES,127
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc) 57A (Tj) 35.2A (Tc) 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 13.9mOhm @ 15A, 10V 16mOhm @ 15A, 10V 13.9mOhm @ 10A, 10V 13.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 49 nC @ 10 V 57.5 nC @ 10 V 59 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3195 pF @ 50 V 2404 pF @ 50 V 3195 pF @ 50 V 3195 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 170W (Tc) 148W (Tc) 48.4W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220F I2PAK
Package / Case TO-220-3 TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-262-3 Long Leads, I²Pak, TO-262AA

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