PMZ390UNEYL
  • Share:

Nexperia USA Inc. PMZ390UNEYL

Manufacturer No:
PMZ390UNEYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 900MA DFN1006-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZ390UNEYL is a 30 V, N-channel Trench MOSFET produced by Nexperia USA Inc. This component is part of Nexperia’s extensive portfolio of MOSFETs, known for their high performance and reliability. The PMZ390UNEYL is housed in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package, making it ideal for applications where space is limited.

This MOSFET utilizes Trench MOSFET technology, which offers several benefits including low threshold voltage, very fast switching, and robust ElectroStatic Discharge (ESD) protection up to 2 kV HBM. These features make the PMZ390UNEYL suitable for a wide range of applications across various industries.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
ID (Continuous Drain Current) 900 mA
PTOT (Total Power Dissipation at Ta = 25°C) 350 mW
PTOT (Total Power Dissipation at Tc = 25°C) 5.43 W
VGS(th) (Threshold Voltage) 0.9 - 2.5 V
RDS(on) (On-State Drain-Source Resistance) 0.35 Ω
Package DFN1006-3 (SOT883) -
Dimensions 1.0 x 0.6 x 0.48 mm -

Key Features

  • Trench MOSFET Technology: Enhances performance with lower on-state resistance and faster switching times.
  • Low Threshold Voltage: Facilitates easier switching and lower gate drive requirements.
  • Very Fast Switching: Ideal for high-speed applications such as relay drivers and high-speed line drivers.
  • ElectroStatic Discharge (ESD) Protection: Offers robust protection up to 2 kV HBM, ensuring reliability in harsh environments.
  • Leadless Ultra Small SMD Package: The DFN1006-3 (SOT883) package is highly compact, making it suitable for space-constrained designs.

Applications

  • Relay Drivers: The fast switching and low on-state resistance make it ideal for driving relays efficiently.
  • High-Speed Line Drivers: Suitable for applications requiring fast signal transmission and low distortion.
  • Low-Side Load Switches: Can be used to control the flow of current in various load switching applications.
  • Switching Circuits: General-purpose switching applications benefit from its fast switching and low power dissipation.
  • Automotive and Industrial Systems: Used in various automotive and industrial applications due to its robustness and reliability.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMZ390UNEYL?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the continuous drain current (ID) of the PMZ390UNEYL?

    The continuous drain current (ID) is 900 mA.

  3. What type of package does the PMZ390UNEYL use?

    The PMZ390UNEYL is housed in a leadless ultra small DFN1006-3 (SOT883) SMD plastic package.

  4. What is the threshold voltage (VGS(th)) range of the PMZ390UNEYL?

    The threshold voltage (VGS(th)) range is 0.9 to 2.5 V.

  5. Does the PMZ390UNEYL have ESD protection?

    Yes, it has ESD protection up to 2 kV HBM.

  6. What are some common applications of the PMZ390UNEYL?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and general-purpose switching circuits.

  7. What is the total power dissipation (PTOT) at Ta = 25°C?

    The total power dissipation (PTOT) at Ta = 25°C is 350 mW.

  8. What is the on-state drain-source resistance (RDS(on)) of the PMZ390UNEYL?

    The on-state drain-source resistance (RDS(on)) is 0.35 Ω.

  9. Where can I purchase the PMZ390UNEYL?

    You can purchase the PMZ390UNEYL from various distributors such as Digi-Key, Mouser, and directly from Nexperia’s website.

  10. Is the PMZ390UNEYL RoHS compliant?

    Yes, the PMZ390UNEYL is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:470mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta), 5.43W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883
Package / Case:SC-101, SOT-883
0 Remaining View Similar

In Stock

$0.50
1,147

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMZ390UNEYL PMZB390UNEYL PMZ290UNEYL PMZ370UNEYL
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP Semiconductors Nexperia USA Inc.
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 900mA (Ta) 900mA (Ta) 1A (Ta) 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 470mOhm @ 900mA, 4.5V 470mOhm @ 900mA, 4.5V 380mOhm @ 500mA, 4.5V 490mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA 950mV @ 250µA 1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 4.5 V 1.3 nC @ 4.5 V 0.68 nC @ 4.5 V 1.16 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 41 pF @ 15 V 41 pF @ 15 V 83 pF @ 10 V 78 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 350mW (Ta), 5.43W (Tc) 350mW (Ta), 5.43W (Tc) 360mW (Ta), 2.7W (Tc) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-883 DFN1006B-3 SOT-883 SOT-883
Package / Case SC-101, SOT-883 3-XFDFN SC-101, SOT-883 SC-101, SOT-883

Related Product By Categories

STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

PDZ27BF
PDZ27BF
Nexperia USA Inc.
DIODE ZENER 27V 400MW SOD323
BZT52H-B20,115
BZT52H-B20,115
Nexperia USA Inc.
DIODE ZENER 20V 375MW SOD123F
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
HEF4541BT,653
HEF4541BT,653
Nexperia USA Inc.
IC OSC PROG TIMER 36MHZ 14SOIC
74HCT4051PW,112
74HCT4051PW,112
Nexperia USA Inc.
IC MUX/DEMUX 8X1 16TSSOP
HEF4027BT,653
HEF4027BT,653
Nexperia USA Inc.
IC FF JK TYPE DUAL 1BIT 16SO
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
74AHC573D,118
74AHC573D,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20SOIC
PDZ15BGW,115
PDZ15BGW,115
Nexperia USA Inc.
ZENER DIODE