PMV50XPR
  • Share:

Nexperia USA Inc. PMV50XPR

Manufacturer No:
PMV50XPR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.6A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV50XPR is a P-Channel MOSFET manufactured by Nexperia USA Inc. This component is designed for high-performance applications requiring low on-state resistance and high current handling capabilities. The PMV50XPR is packaged in a TO-236AB (SC-59, SOT-23-3) surface mount package, making it suitable for a variety of compact electronic designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
ID (Continuous Drain Current at Ta)3.6 A
PD (Total Power Dissipation at Ta)490 mW
PD (Total Power Dissipation at Tc)4.63 W
PackageTO-236AB (SC-59, SOT-23-3)

Key Features

  • Low on-state resistance (RDS(on)) for efficient power handling.
  • High continuous drain current (ID) of 3.6 A.
  • Compact TO-236AB (SC-59, SOT-23-3) surface mount package.
  • High total power dissipation capabilities.
  • Suitable for high-frequency switching applications.

Applications

  • Power management in portable electronics.
  • DC-DC converters and power supplies.
  • Motor control and drive circuits.
  • Audio and video equipment.
  • General-purpose switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV50XPR?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the continuous drain current (ID) at ambient temperature (Ta)?
    The continuous drain current (ID) at ambient temperature (Ta) is 3.6 A.
  3. What is the total power dissipation at ambient temperature (Ta)?
    The total power dissipation at ambient temperature (Ta) is 490 mW.
  4. What is the total power dissipation at case temperature (Tc)?
    The total power dissipation at case temperature (Tc) is 4.63 W.
  5. What package type is the PMV50XPR available in?
    The PMV50XPR is available in the TO-236AB (SC-59, SOT-23-3) surface mount package.
  6. What are some typical applications of the PMV50XPR?
    Typical applications include power management in portable electronics, DC-DC converters, motor control, audio and video equipment, and general-purpose switching.
  7. Why is the PMV50XPR suitable for high-frequency switching applications?
    The PMV50XPR is suitable due to its low on-state resistance and high current handling capabilities.
  8. Where can I find detailed specifications and datasheets for the PMV50XPR?
    Detailed specifications and datasheets can be found on the Nexperia website, as well as through distributors like Digi-Key and Mouser.
  9. What is the significance of the TO-236AB package?
    The TO-236AB package is a compact surface mount package, making it ideal for space-constrained designs.
  10. How does the PMV50XPR contribute to efficient power handling?
    The PMV50XPR contributes to efficient power handling through its low on-state resistance (RDS(on)).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:60mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:744 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):490mW (Ta), 4.63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.39
810

Please send RFQ , we will respond immediately.

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PMEG3010BEAZ
PMEG3010BEAZ
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1A SOD323
BC847BS-QX
BC847BS-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
PUMD10/ZLF
PUMD10/ZLF
Nexperia USA Inc.
TRANS PREBIAS
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCP52-10TF
BCP52-10TF
Nexperia USA Inc.
BCP52-10T/SOT223/SC-73
BUK9K6R2-40E,115
BUK9K6R2-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
HEF4027BT,653
HEF4027BT,653
Nexperia USA Inc.
IC FF JK TYPE DUAL 1BIT 16SO
74LVC1G80GV-Q100,1
74LVC1G80GV-Q100,1
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT SC74A
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP