PMV45EN2VL
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Nexperia USA Inc. PMV45EN2VL

Manufacturer No:
PMV45EN2VL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV45EN2VL is a 30 V N-channel Trench MOSFET produced by Nexperia USA Inc. This device is designed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is known for its logic level compatibility, very fast switching capabilities, and enhanced power dissipation. The PMV45EN2VL is suitable for a variety of applications, including relay drivers, high-speed line drivers, and low-side load switches.

Key Specifications

Parameter Value Unit
VDS (Max) 30 V
VGS (Max) ±20 V
RDSon (Max) @ VGS = 10 V 42
RDSon (Max) @ VGS = 4.5 V, @25°C 54
Tj (Max) 150 °C
ID (Max) 5.1 A
Ptot (Max) 1.115 W
VGSth (Typ) 2 V
Ciss (Typ) 209 pF
Package SOT23 (TO-236AB)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C ~ 150°C (Tj)

Key Features

  • Logic Level Compatible: The PMV45EN2VL is compatible with logic level inputs, making it versatile for various applications.
  • Very Fast Switching: This MOSFET features very fast switching times, which is crucial for high-speed applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • Enhanced Power Dissipation: Offers an enhanced power dissipation capability of up to 1115 mW.
  • Lead-Free and Halogen-Free: Compliant with Nexperia's halogen-free definition and RoHS regulations.

Applications

  • Relay Drivers: Suitable for driving relays in various electronic systems.
  • High-Speed Line Drivers: Ideal for applications requiring fast switching and high-speed line driving.
  • Low-Side Load Switches: Can be used as low-side load switches in power management circuits.
  • Switching Circuits: Applicable in general switching circuits where fast switching and low RDSon are required.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMV45EN2VL?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the maximum gate-source voltage (VGS) of the PMV45EN2VL?

    The maximum gate-source voltage (VGS) is ±20 V.

  3. What is the typical threshold voltage (VGSth) of the PMV45EN2VL?

    The typical threshold voltage (VGSth) is 2 V.

  4. What is the maximum continuous drain current (ID) of the PMV45EN2VL?

    The maximum continuous drain current (ID) is 5.1 A.

  5. What is the package type of the PMV45EN2VL?

    The package type is SOT23 (TO-236AB).

  6. Is the PMV45EN2VL RoHS compliant?

    Yes, the PMV45EN2VL is RoHS compliant and lead-free.

  7. What is the operating temperature range of the PMV45EN2VL?

    The operating temperature range is -55°C to 150°C (Tj).

  8. What is the moisture sensitivity level (MSL) of the PMV45EN2VL?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  9. What are some typical applications of the PMV45EN2VL?

    Typical applications include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.

  10. Does the PMV45EN2VL contain any hazardous substances?

    No, it does not contain REACH SVHC substances exceeding 1000 ppm and is compliant with various environmental regulations such as RoHS and ELV.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:42mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:209 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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PMV45EN2VL
PMV45EN2VL
MOSFET N-CH 30V 5.1A TO236AB

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