PMV32UP,215
  • Share:

Nexperia USA Inc. PMV32UP,215

Manufacturer No:
PMV32UP,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 4A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV32UP,215 is a P-channel enhancement-mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is packaged in a small SOT-23 (TO-236AB) surface-mount plastic package, utilizing Trench MOSFET technology. It is designed for high-performance applications requiring low on-state resistance and fast switching times.

Key Specifications

Parameter Value Unit
Channel Type P-Channel
Maximum Continuous Drain Current 4 A
Maximum Drain Source Voltage 20 V
Package Type SOT-23 (TO-236AB)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source On-State Resistance 36 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 0.95 V
Minimum Gate Threshold Voltage 0.45 V
Maximum Power Dissipation 510 mW
Maximum Gate Source Voltage -8 V to +8 V
Operating Temperature Range -55 °C to +150 °C
Typical Gate Charge @ Vgs 15.5 nC @ 4.5 V
Input Capacitance 1890 pF @ 10 V

Key Features

  • Low on-state resistance (Rds(on)) of 36 mΩ at Vgs = -4.5 V and ID = -2.4 A
  • Very fast switching times with turn-on delay of 13 ns and turn-off delay of 95 ns
  • Trench MOSFET technology for improved performance and efficiency
  • Wide operating temperature range from -55 °C to +150 °C
  • Surface mount package (SOT-23) for compact design and ease of integration

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
  • Power management and industrial applications

Q & A

  1. What is the maximum continuous drain current of the PMV32UP,215? The maximum continuous drain current is 4 A.
  2. What is the maximum drain-source voltage of the PMV32UP,215? The maximum drain-source voltage is 20 V.
  3. What package type does the PMV32UP,215 use? The PMV32UP,215 is packaged in a SOT-23 (TO-236AB) surface-mount package.
  4. What is the typical gate charge of the PMV32UP,215? The typical gate charge is 15.5 nC at Vgs = 4.5 V.
  5. What is the operating temperature range of the PMV32UP,215? The operating temperature range is from -55 °C to +150 °C.
  6. What are some common applications of the PMV32UP,215? Common applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.
  7. What is the maximum power dissipation of the PMV32UP,215? The maximum power dissipation is 510 mW.
  8. What is the maximum gate-source voltage of the PMV32UP,215? The maximum gate-source voltage is -8 V to +8 V.
  9. Is the PMV32UP,215 RoHS compliant? Yes, the PMV32UP,215 is RoHS compliant.
  10. What is the input capacitance of the PMV32UP,215? The input capacitance is 1890 pF at 10 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:36mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1890 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.59
1,509

Please send RFQ , we will respond immediately.

Related Product By Categories

PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

PMEG4030ER/8X
PMEG4030ER/8X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 3A SOD123W
BZX84-C36,235
BZX84-C36,235
Nexperia USA Inc.
DIODE ZENER 36V 250MW TO236AB
BZX585-B4V7,135
BZX585-B4V7,135
Nexperia USA Inc.
DIODE ZENER 4.7V 300MW SOD523
BZX84-C6V2/DG/B4R
BZX84-C6V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 6.2V 250MW TO236AB
PUMH2/DG/B3,115
PUMH2/DG/B3,115
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
2N7002CK
2N7002CK
Nexperia USA Inc.
2N7002 - SMALL SIGNAL FIELD-EFFE
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
74HC1G66GW-Q100H
74HC1G66GW-Q100H
Nexperia USA Inc.
IC ANLG SWITCH SPST 5TSSOP
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
74HCT14D-Q100,118
74HCT14D-Q100,118
Nexperia USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO