PMV32UP,215
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Nexperia USA Inc. PMV32UP,215

Manufacturer No:
PMV32UP,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 4A TO236AB
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The PMV32UP,215 is a P-channel enhancement-mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is packaged in a small SOT-23 (TO-236AB) surface-mount plastic package, utilizing Trench MOSFET technology. It is designed for high-performance applications requiring low on-state resistance and fast switching times.

Key Specifications

Parameter Value Unit
Channel Type P-Channel
Maximum Continuous Drain Current 4 A
Maximum Drain Source Voltage 20 V
Package Type SOT-23 (TO-236AB)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source On-State Resistance 36 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 0.95 V
Minimum Gate Threshold Voltage 0.45 V
Maximum Power Dissipation 510 mW
Maximum Gate Source Voltage -8 V to +8 V
Operating Temperature Range -55 °C to +150 °C
Typical Gate Charge @ Vgs 15.5 nC @ 4.5 V
Input Capacitance 1890 pF @ 10 V

Key Features

  • Low on-state resistance (Rds(on)) of 36 mΩ at Vgs = -4.5 V and ID = -2.4 A
  • Very fast switching times with turn-on delay of 13 ns and turn-off delay of 95 ns
  • Trench MOSFET technology for improved performance and efficiency
  • Wide operating temperature range from -55 °C to +150 °C
  • Surface mount package (SOT-23) for compact design and ease of integration

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
  • Power management and industrial applications

Q & A

  1. What is the maximum continuous drain current of the PMV32UP,215? The maximum continuous drain current is 4 A.
  2. What is the maximum drain-source voltage of the PMV32UP,215? The maximum drain-source voltage is 20 V.
  3. What package type does the PMV32UP,215 use? The PMV32UP,215 is packaged in a SOT-23 (TO-236AB) surface-mount package.
  4. What is the typical gate charge of the PMV32UP,215? The typical gate charge is 15.5 nC at Vgs = 4.5 V.
  5. What is the operating temperature range of the PMV32UP,215? The operating temperature range is from -55 °C to +150 °C.
  6. What are some common applications of the PMV32UP,215? Common applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.
  7. What is the maximum power dissipation of the PMV32UP,215? The maximum power dissipation is 510 mW.
  8. What is the maximum gate-source voltage of the PMV32UP,215? The maximum gate-source voltage is -8 V to +8 V.
  9. Is the PMV32UP,215 RoHS compliant? Yes, the PMV32UP,215 is RoHS compliant.
  10. What is the input capacitance of the PMV32UP,215? The input capacitance is 1890 pF at 10 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:36mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1890 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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