PMPB15XP,115
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Nexperia USA Inc. PMPB15XP,115

Manufacturer No:
PMPB15XP,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 8.2A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB15XP,115 is a high-performance P-channel Trench MOSFET manufactured by Nexperia USA Inc. This device is designed to meet the demands of various power management and switching applications. It features a compact 6-UDFN Exposed Pad package, making it ideal for space-constrained designs. The MOSFET is built using trench technology, which enhances its electrical performance and reliability.

Key Specifications

Parameter Value
Type P-Channel Trench MOSFET
Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 8.2 A (at 25°C)
Rds On - Drain-Source On Resistance 19 mΩ (at 8.2 A, 4.5 V)
Drive Voltage (Max Rds On, Min Rds On) 1.8 V to 4.5 V
Package 6-UDFN Exposed Pad (SOT1220)
Number of Pins 6
Transistor Element Material Silicon
Power Dissipation (Max) 1.7 W (Ta), 12.5 W (Tc)
Turn On Delay Time 18 ns
ESD Protection 1.5 kV (human body model)

Key Features

  • Trench MOSFET technology for enhanced electrical performance and reliability.
  • Compact 6-UDFN Exposed Pad package (SOT1220) for space-constrained designs.
  • High continuous drain current of 8.2 A at 25°C.
  • Low on-resistance of 19 mΩ at 8.2 A, 4.5 V.
  • 1.5 kV ESD protection (human body model).
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.

Applications

  • Power management and switching in various electronic devices.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • High-power audio amplifiers.
  • Automotive and industrial control systems.

Q & A

  1. What is the type of the PMPB15XP,115 MOSFET?

    The PMPB15XP,115 is a P-channel Trench MOSFET.

  2. What is the maximum drain-source breakdown voltage of the PMPB15XP,115?

    The maximum drain-source breakdown voltage is 12 V.

  3. What is the continuous drain current rating of the PMPB15XP,115 at 25°C?

    The continuous drain current rating is 8.2 A at 25°C.

  4. What is the on-resistance of the PMPB15XP,115?

    The on-resistance is 19 mΩ at 8.2 A, 4.5 V.

  5. What type of package does the PMPB15XP,115 come in?

    The PMPB15XP,115 comes in a 6-UDFN Exposed Pad package (SOT1220).

  6. What is the ESD protection rating of the PMPB15XP,115?

    The ESD protection rating is 1.5 kV (human body model).

  7. What are some common applications of the PMPB15XP,115?

    Common applications include power management and switching, DC-DC converters, motor control, high-power audio amplifiers, and automotive and industrial control systems.

  8. What is the power dissipation rating of the PMPB15XP,115?

    The power dissipation rating is 1.7 W (Ta) and 12.5 W (Tc).

  9. What is the turn-on delay time of the PMPB15XP,115?

    The turn-on delay time is 18 ns.

  10. Where can I purchase the PMPB15XP,115?

    The PMPB15XP,115 can be purchased from various distributors such as Mouser, Utmel, and X-ON Electronics, among others.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:19mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2875 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
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In Stock

$0.52
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Same Series
PMPB15XPH
PMPB15XPH
MOSFET P-CH 12V 8.2A DFN2020MD-6
PMPB15XPZ
PMPB15XPZ
MOSFET P-CH 12V 8.2A DFN2020MD-6

Similar Products

Part Number PMPB15XP,115 PMPB19XP,115 PMPB15XN,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta) 7.2A (Ta) 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 19mOhm @ 8.2A, 4.5V 22.5mOhm @ 7.2A, 4.5V 21mOhm @ 7.3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 4.5 V 43.2 nC @ 4.5 V 20.2 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2875 pF @ 6 V 2890 pF @ 10 V 1240 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) 1.7W (Ta), 12.5W (Tc) 1.7W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DFN2020MD-6 DFN2020MD-6 DFN2020MD-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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