PMPB15XPZ
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Nexperia USA Inc. PMPB15XPZ

Manufacturer No:
PMPB15XPZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 8.2A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB15XPZ is a high-performance P-channel Trench MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of discrete semiconductor products, known for their reliability and efficiency. The PMPB15XPZ is designed to meet the demands of various power switching applications, offering low on-resistance and high efficiency.

Key Specifications

ParameterValue
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Continuous Drain Current (Id) @ 25°CSee datasheet for specific values
PackageSOT1220 (LFPAK56E)
ESD Protection1.5 kV (human body model)
Gate DriveStandard-level

Key Features

  • Trench MOSFET technology for low on-resistance and high efficiency.
  • Small and leadless ultra thin SMD plastic package (SOT1220 or LFPAK56E) measuring 2 x 2 x 0.65 mm.
  • 1.5 kV ESD protection (human body model) for enhanced reliability.
  • Standard-level gate drive for ease of use in various applications.
  • Low Q (charge) for higher efficiency and lower spiking.

Applications

The PMPB15XPZ is suitable for a wide range of applications, including:

  • Power switching in industrial and automotive systems.
  • Uninterruptible Power Supply (UPS) systems.
  • Motor drives for collaborative robots (cobots) and industrial equipment.
  • Electric forklift trucks and other electric vehicles.
  • General-purpose power management in electronic devices.

Q & A

  1. What is the drain to source voltage (Vdss) of the PMPB15XPZ?
    The drain to source voltage (Vdss) of the PMPB15XPZ is 12 V.
  2. What type of package does the PMPB15XPZ come in?
    The PMPB15XPZ comes in a SOT1220 (LFPAK56E) package.
  3. What is the ESD protection level of the PMPB15XPZ?
    The PMPB15XPZ has 1.5 kV ESD protection (human body model).
  4. What technology is used in the PMPB15XPZ?
    The PMPB15XPZ uses Trench MOSFET technology.
  5. What are the key benefits of the Trench MOSFET technology in the PMPB15XPZ?
    The Trench MOSFET technology provides low on-resistance and high efficiency.
  6. What is the typical application of the PMPB15XPZ?
    The PMPB15XPZ is typically used in power switching applications in industrial, automotive, and general-purpose power management systems.
  7. What is the continuous drain current (Id) of the PMPB15XPZ at 25°C?
    Refer to the datasheet for specific values of continuous drain current (Id) at 25°C.
  8. Does the PMPB15XPZ support standard-level gate drive?
    Yes, the PMPB15XPZ supports standard-level gate drive.
  9. What are the dimensions of the SOT1220 package?
    The SOT1220 package measures 2 x 2 x 0.65 mm.
  10. Where can I find more detailed specifications and documentation for the PMPB15XPZ?
    You can find detailed specifications and documentation on Nexperia's official website or through authorized distributors like Digi-Key and Mouser.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:19mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2875 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
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Same Series
PMPB15XPH
PMPB15XPH
MOSFET P-CH 12V 8.2A DFN2020MD-6
PMPB15XPZ
PMPB15XPZ
MOSFET P-CH 12V 8.2A DFN2020MD-6

Similar Products

Part Number PMPB15XPZ PMPB15XPH
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta) 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 19mOhm @ 8.2A, 4.5V 19mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 4.5 V 100 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2875 pF @ 6 V 2875 pF @ 6 V
FET Feature - -
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) 1.7W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN2020MD-6 DFN2020MD-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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