PMPB11EN,115
  • Share:

Nexperia USA Inc. PMPB11EN,115

Manufacturer No:
PMPB11EN,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB11EN,115 is a high-performance N-channel Trench MOSFET produced by Nexperia USA Inc. This device is housed in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package. It leverages Trench MOSFET technology to offer enhanced power efficiency and reliability. The PMPB11EN,115 is designed to meet the stringent requirements of various industrial and automotive applications, ensuring high efficiency and low power losses.

Key Specifications

Parameter Value
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 9 A
On-State Resistance (Rds On) @ Id, Vgs 19 mΩ @ 8.2 A, 4.5 V
Gate Threshold Voltage (Vgs(th)) @ Id 900 mV @ 250 µA
Power Dissipation (Max) 1.7 W (Ta), 12.5 W (Tc)
Operating Temperature Range -55°C to 150°C (TJ)
Package Type 6-DFN2020MD (2x2) Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate Charge (Qg) @ Vgs 100 nC @ 4.5 V
Input Capacitance (Ciss) @ Vds 2875 pF @ 6 V

Key Features

  • Trench MOSFET Technology: Enhances power efficiency and reduces on-state resistance.
  • Low On-State Resistance: 19 mΩ @ 8.2 A, 4.5 V, minimizing power losses.
  • High Continuous Drain Current: Up to 9 A at 25°C, suitable for high-power applications.
  • Compact Package: Leadless medium power DFN2020MD-6 (SOT1220) package, saving PCB space.
  • Wide Operating Temperature Range: -55°C to 150°C (TJ), ensuring reliability in various environments.
  • RoHS Compliant: Lead-free and RoHS compliant, meeting environmental standards.

Applications

  • Automotive Systems: Suitable for automotive applications due to its compliance with AEC-Q100/Q101 standards.
  • Industrial Power Systems: Used in high-efficiency power supplies, motor drives, and other industrial power applications.
  • Renewable Energy Systems: Ideal for applications in solar and wind power systems where high efficiency is crucial.
  • Robotics and Automation: Utilized in collaborative robots (cobots) and other automated industrial equipment.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PMPB11EN,115?

    The maximum drain to source voltage (Vdss) is 30 V.

  2. What is the continuous drain current (Id) at 25°C for the PMPB11EN,115?

    The continuous drain current (Id) at 25°C is up to 9 A.

  3. What is the on-state resistance (Rds On) of the PMPB11EN,115?

    The on-state resistance (Rds On) is 19 mΩ @ 8.2 A, 4.5 V.

  4. What is the gate threshold voltage (Vgs(th)) of the PMPB11EN,115?

    The gate threshold voltage (Vgs(th)) is 900 mV @ 250 µA.

  5. What is the maximum power dissipation of the PMPB11EN,115?

    The maximum power dissipation is 1.7 W (Ta) and 12.5 W (Tc).

  6. What is the operating temperature range of the PMPB11EN,115?

    The operating temperature range is -55°C to 150°C (TJ).

  7. What package type is used for the PMPB11EN,115?

    The package type is 6-DFN2020MD (2x2) Surface Mount.

  8. Is the PMPB11EN,115 RoHS compliant?

    Yes, the PMPB11EN,115 is lead-free and RoHS compliant.

  9. What are some typical applications for the PMPB11EN,115?

    Typical applications include automotive systems, industrial power systems, renewable energy systems, and robotics and automation.

  10. What technology is used in the PMPB11EN,115?

    The PMPB11EN,115 uses Trench MOSFET technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:840 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.48
1,843

Please send RFQ , we will respond immediately.

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

BZX79-C3V3,133
BZX79-C3V3,133
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW ALF2
PUMD10/ZLF
PUMD10/ZLF
Nexperia USA Inc.
TRANS PREBIAS
BC807-16HR
BC807-16HR
Nexperia USA Inc.
BC807-16H/SOT23/TO-236AB
BCX54-16TF
BCX54-16TF
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
BC847CW-QX
BC847CW-QX
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
2N7002CK
2N7002CK
Nexperia USA Inc.
2N7002 - SMALL SIGNAL FIELD-EFFE
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
74HCT4066D/C4118
74HCT4066D/C4118
Nexperia USA Inc.
74HCT4066D - SPST, 4 FUNC
74HCT245D,652
74HCT245D,652
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74HC164D,653
74HC164D,653
Nexperia USA Inc.
IC SHIFT REGST 8BIT SI-PO 14SOIC
74AUP1G157GM-Q100X
74AUP1G157GM-Q100X
Nexperia USA Inc.
IC MULTIPLX 1 X 2:1 6XSON/SOT886