PMPB11EN,115
  • Share:

Nexperia USA Inc. PMPB11EN,115

Manufacturer No:
PMPB11EN,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB11EN,115 is a high-performance N-channel Trench MOSFET produced by Nexperia USA Inc. This device is housed in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package. It leverages Trench MOSFET technology to offer enhanced power efficiency and reliability. The PMPB11EN,115 is designed to meet the stringent requirements of various industrial and automotive applications, ensuring high efficiency and low power losses.

Key Specifications

Parameter Value
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 9 A
On-State Resistance (Rds On) @ Id, Vgs 19 mΩ @ 8.2 A, 4.5 V
Gate Threshold Voltage (Vgs(th)) @ Id 900 mV @ 250 µA
Power Dissipation (Max) 1.7 W (Ta), 12.5 W (Tc)
Operating Temperature Range -55°C to 150°C (TJ)
Package Type 6-DFN2020MD (2x2) Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate Charge (Qg) @ Vgs 100 nC @ 4.5 V
Input Capacitance (Ciss) @ Vds 2875 pF @ 6 V

Key Features

  • Trench MOSFET Technology: Enhances power efficiency and reduces on-state resistance.
  • Low On-State Resistance: 19 mΩ @ 8.2 A, 4.5 V, minimizing power losses.
  • High Continuous Drain Current: Up to 9 A at 25°C, suitable for high-power applications.
  • Compact Package: Leadless medium power DFN2020MD-6 (SOT1220) package, saving PCB space.
  • Wide Operating Temperature Range: -55°C to 150°C (TJ), ensuring reliability in various environments.
  • RoHS Compliant: Lead-free and RoHS compliant, meeting environmental standards.

Applications

  • Automotive Systems: Suitable for automotive applications due to its compliance with AEC-Q100/Q101 standards.
  • Industrial Power Systems: Used in high-efficiency power supplies, motor drives, and other industrial power applications.
  • Renewable Energy Systems: Ideal for applications in solar and wind power systems where high efficiency is crucial.
  • Robotics and Automation: Utilized in collaborative robots (cobots) and other automated industrial equipment.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PMPB11EN,115?

    The maximum drain to source voltage (Vdss) is 30 V.

  2. What is the continuous drain current (Id) at 25°C for the PMPB11EN,115?

    The continuous drain current (Id) at 25°C is up to 9 A.

  3. What is the on-state resistance (Rds On) of the PMPB11EN,115?

    The on-state resistance (Rds On) is 19 mΩ @ 8.2 A, 4.5 V.

  4. What is the gate threshold voltage (Vgs(th)) of the PMPB11EN,115?

    The gate threshold voltage (Vgs(th)) is 900 mV @ 250 µA.

  5. What is the maximum power dissipation of the PMPB11EN,115?

    The maximum power dissipation is 1.7 W (Ta) and 12.5 W (Tc).

  6. What is the operating temperature range of the PMPB11EN,115?

    The operating temperature range is -55°C to 150°C (TJ).

  7. What package type is used for the PMPB11EN,115?

    The package type is 6-DFN2020MD (2x2) Surface Mount.

  8. Is the PMPB11EN,115 RoHS compliant?

    Yes, the PMPB11EN,115 is lead-free and RoHS compliant.

  9. What are some typical applications for the PMPB11EN,115?

    Typical applications include automotive systems, industrial power systems, renewable energy systems, and robotics and automation.

  10. What technology is used in the PMPB11EN,115?

    The PMPB11EN,115 uses Trench MOSFET technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:840 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.48
1,843

Please send RFQ , we will respond immediately.

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

PRTR5V0U2AX,215
PRTR5V0U2AX,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
PESD5V0S1BLD,315
PESD5V0S1BLD,315
Nexperia USA Inc.
TVS DIODE 5VWM 14VC DFN1006D-2
PDZ27BZ
PDZ27BZ
Nexperia USA Inc.
DIODE ZENER 26.86V 400MW SOD323
BZX384-C75,115
BZX384-C75,115
Nexperia USA Inc.
DIODE ZENER 75V 300MW SOD323
BZX84-C47/DG/B2,23
BZX84-C47/DG/B2,23
Nexperia USA Inc.
DIODE ZENER 47V 250MW TO236AB
BC846BM,315
BC846BM,315
Nexperia USA Inc.
TRANS NPN 65V 0.1A DFN1006B-3
PDTC144WU,115
PDTC144WU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74HC3G14DP,125
74HC3G14DP,125
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP
74HCT373PW,112
74HCT373PW,112
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP