PMPB07R3VPX
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Nexperia USA Inc. PMPB07R3VPX

Manufacturer No:
PMPB07R3VPX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
PMPB07R3VP - 12 V, P-CHANNEL TRE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB07R3VPX is a P-channel Trench MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of power MOSFETs, known for their high efficiency and reliability. The PMPB07R3VPX is housed in a small and leadless ultra-thin SMD plastic package (DFN2020M-6), measuring 2 x 2 x 0.65 mm, which makes it ideal for space-constrained designs.

Key Specifications

ParameterValue
Type NumberPMPB07R3VP
PackageDFN2020M-6 (SOT1220-2)
Channel TypeP-channel
VDS [max]-12 V
VGS [max]8 V
RDSon [max] @ VGS = 4.5 V; @25°C8.6 mΩ
RDSon [max] @ VGS = 2.5 V12 mΩ
Tj [max]150°C
ID [max]-17.5 A
QGD [typ]7.4 nC
QG(tot) [typ] @ VGS = 4.5 V28 nC
Ptot [max]1.9 W (Ta), 12.5 W (Tc)
VGSth [typ]-0.65 V
Automotive QualifiedNo
Ciss [typ]212 pF
Coss [typ]511 pF

Key Features

  • Trench MOSFET Technology: Offers low on-state resistance and high switching efficiency.
  • Low Threshold Voltage: Ensures easy switching and low gate drive requirements.
  • Small and Leadless Ultra-Thin SMD Package: The DFN2020M-6 package measures 2 x 2 x 0.65 mm, making it suitable for compact designs.
  • Exposed Drain Pad: Enhances thermal performance and simplifies PCB layout.

Applications

The PMPB07R3VPX is versatile and can be used in various applications across different industries, including:

  • Power Management: DC-DC conversion, load switching, and power supply designs.
  • Consumer Electronics: Mobile devices, wearables, and other consumer electronics requiring compact and efficient power management solutions.
  • Industrial and Computing: Motor drives, UPS systems, and other industrial applications where high efficiency and reliability are crucial.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMPB07R3VPX?
    The maximum drain-source voltage (VDS) is -12 V.
  2. What is the package type of the PMPB07R3VPX?
    The package type is DFN2020M-6 (SOT1220-2).
  3. What is the maximum on-state resistance (RDSon) at VGS = 4.5 V?
    The maximum on-state resistance (RDSon) at VGS = 4.5 V is 8.6 mΩ.
  4. What is the maximum junction temperature (Tj)?
    The maximum junction temperature (Tj) is 150°C.
  5. Is the PMPB07R3VPX automotive qualified?
    No, the PMPB07R3VPX is not automotive qualified.
  6. What is the typical gate-source threshold voltage (VGSth)?
    The typical gate-source threshold voltage (VGSth) is -0.65 V.
  7. What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
    The typical input capacitance (Ciss) is 212 pF, and the typical output capacitance (Coss) is 511 pF.
  8. What are some common applications of the PMPB07R3VPX?
    Common applications include power management, consumer electronics, and industrial and computing systems.
  9. What is the maximum continuous drain current (ID)?
    The maximum continuous drain current (ID) is -17.5 A.
  10. What is the total power dissipation (Ptot) at ambient temperature (Ta) and case temperature (Tc)?
    The total power dissipation (Ptot) is 1.9 W at Ta and 12.5 W at Tc.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:8.6mOhm @ 12.5A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2121 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):1.9W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020M-6
Package / Case:6-UDFN Exposed Pad
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