NX7002BKVL
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Nexperia USA Inc. NX7002BKVL

Manufacturer No:
NX7002BKVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 270MA TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The NX7002BKVL is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component utilizes Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed for high-performance applications requiring fast switching and low on-state resistance.

The NX7002BKVL is part of Nexperia’s extensive portfolio of MOSFETs, which are used across various industries including automotive, industrial, power, computing, consumer, mobile, and wearables. This device is known for its efficiency, robustness, and reliability, making it a versatile choice for a wide range of electronic designs.

Key Specifications

Parameter Conditions Min Max Unit
VDS (drain-source voltage) - - - 60 V
VGS (gate-source voltage) Tamb = 25 °C -20 - 20 V
ID (drain current) VGS = 10 V; Tamb = 25 °C - - 350 mA
RDSon (drain-source on-state resistance) VGS = 10 V; ID = 500 mA; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C - 1.6 - Ω
VESD (ESD protection) - - - 2 kV
Tj (junction temperature) - - - 150 °C
Ptot (total power dissipation) - - - 1.6 W
Ciss (input capacitance) - - 23.6 - pF
Coss (output capacitance) - - 4.6 - pF

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology for enhanced performance
  • ElectroStatic Discharge (ESD) protection up to 2 kV
  • AEC-Q101 qualified for automotive applications

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX7002BKVL?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the maximum drain current (ID) of the NX7002BKVL?

    The maximum drain current (ID) is 350 mA.

  3. What is the typical on-state resistance (RDSon) of the NX7002BKVL?

    The typical on-state resistance (RDSon) is 1.6 Ω at VGS = 10 V and ID = 500 mA.

  4. Does the NX7002BKVL have ESD protection?
  5. What is the maximum junction temperature (Tj) of the NX7002BKVL?

    The maximum junction temperature (Tj) is 150 °C.

  6. Is the NX7002BKVL AEC-Q101 qualified?
  7. What package type is the NX7002BKVL available in?

    The NX7002BKVL is available in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  8. What are some common applications of the NX7002BKVL?
  9. How does the Trench MOSFET technology benefit the NX7002BKVL?

    The Trench MOSFET technology enhances the performance of the NX7002BKVL by providing very fast switching and low on-state resistance.

  10. Can I order samples of the NX7002BKVL?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23.6 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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Same Series
NX7002BKR
NX7002BKR
MOSFET N-CH 60V 270MA TO236AB

Similar Products

Part Number NX7002BKVL NX7002AKVL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta) 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 200mA, 10V 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V 0.43 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23.6 pF @ 10 V 20 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta) 265mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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