NX7002BKR
  • Share:

Nexperia USA Inc. NX7002BKR

Manufacturer No:
NX7002BKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 270MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX7002BKR is a 60 V, N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-efficiency and fast switching applications, making it suitable for a variety of electronic designs across different industries.

Key Specifications

ParameterValue
Type numberNX7002BK
PackageSOT23 (TO-236AB)
Channel typeN-channel
VDS [max]60 V
VGS [max]20 V
RDSon [max] @ VGS = 10 V2.8 Ω
RDSon [max] @ VGS = 5 V3.2 Ω
VESD (HBM)> 2 kV
Tj [max]150 °C
ID [max]0.33 A
Ptot [max]1.6 W
VGSth [typ]2.1 V @ 250 μA

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology for high efficiency
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Low on-state resistance (RDSon)
  • High-speed line driver and relay driver capabilities
  • Low-side load switch and switching circuits applications

Applications

The NX7002BKR is versatile and can be used in various applications, including:

  • Relay drivers
  • High-speed line drivers
  • Low-side load switches
  • Switching circuits
  • Automotive and industrial systems
  • Power, computing, consumer, mobile, and wearable devices

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX7002BKR? The maximum drain-source voltage is 60 V.
  2. What is the package type of the NX7002BKR? The package type is SOT23 (TO-236AB).
  3. What is the typical threshold voltage (VGSth) of the NX7002BKR? The typical threshold voltage is 2.1 V at 250 μA.
  4. Does the NX7002BKR have ESD protection? Yes, it has ESD protection greater than 2 kV HBM.
  5. What are some common applications of the NX7002BKR? Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
  6. What is the maximum on-state resistance (RDSon) at VGS = 10 V? The maximum on-state resistance at VGS = 10 V is 2.8 Ω.
  7. Is the NX7002BKR RoHS compliant? Yes, the NX7002BKR is RoHS compliant.
  8. What is the maximum junction temperature (Tj) of the NX7002BKR? The maximum junction temperature is 150 °C.
  9. What is the maximum continuous drain current (ID) of the NX7002BKR? The maximum continuous drain current is 0.33 A.
  10. Where can I find more detailed technical information about the NX7002BKR? Detailed technical information can be found in the datasheet and application notes available on Nexperia’s official website and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23.6 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta), 1.67W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.23
1,422

Please send RFQ , we will respond immediately.

Same Series
NX7002BKR
NX7002BKR
MOSFET N-CH 60V 270MA TO236AB

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
BAT854CW,115
BAT854CW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
BZX84-B9V1/DG/B4R
BZX84-B9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.1V 250MW TO236AB
BZX84-C3V3/DG/B3,2
BZX84-C3V3/DG/B3,2
Nexperia USA Inc.
DIODE ZENER 3.3V 250MW TO236AB
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
PBSS304NXZ
PBSS304NXZ
Nexperia USA Inc.
PBSS304NX/SOT89/MPT3
BC846A-QVL
BC846A-QVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
PDTC144WU,115
PDTC144WU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
PDTD123YT/APGR
PDTD123YT/APGR
Nexperia USA Inc.
PDTD123YT/APGR
BSH111,215
BSH111,215
Nexperia USA Inc.
MOSFET N-CH 55V 335MA TO236AB
74HCT4851PW,118
74HCT4851PW,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH SELECT 16TSSOP
74HC2G66DP-Q100H
74HC2G66DP-Q100H
Nexperia USA Inc.
IC SWITCH DUAL SPST 8TSSOP