NX7002BKR
  • Share:

Nexperia USA Inc. NX7002BKR

Manufacturer No:
NX7002BKR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 270MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX7002BKR is a 60 V, N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-efficiency and fast switching applications, making it suitable for a variety of electronic designs across different industries.

Key Specifications

ParameterValue
Type numberNX7002BK
PackageSOT23 (TO-236AB)
Channel typeN-channel
VDS [max]60 V
VGS [max]20 V
RDSon [max] @ VGS = 10 V2.8 Ω
RDSon [max] @ VGS = 5 V3.2 Ω
VESD (HBM)> 2 kV
Tj [max]150 °C
ID [max]0.33 A
Ptot [max]1.6 W
VGSth [typ]2.1 V @ 250 μA

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology for high efficiency
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Low on-state resistance (RDSon)
  • High-speed line driver and relay driver capabilities
  • Low-side load switch and switching circuits applications

Applications

The NX7002BKR is versatile and can be used in various applications, including:

  • Relay drivers
  • High-speed line drivers
  • Low-side load switches
  • Switching circuits
  • Automotive and industrial systems
  • Power, computing, consumer, mobile, and wearable devices

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX7002BKR? The maximum drain-source voltage is 60 V.
  2. What is the package type of the NX7002BKR? The package type is SOT23 (TO-236AB).
  3. What is the typical threshold voltage (VGSth) of the NX7002BKR? The typical threshold voltage is 2.1 V at 250 μA.
  4. Does the NX7002BKR have ESD protection? Yes, it has ESD protection greater than 2 kV HBM.
  5. What are some common applications of the NX7002BKR? Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
  6. What is the maximum on-state resistance (RDSon) at VGS = 10 V? The maximum on-state resistance at VGS = 10 V is 2.8 Ω.
  7. Is the NX7002BKR RoHS compliant? Yes, the NX7002BKR is RoHS compliant.
  8. What is the maximum junction temperature (Tj) of the NX7002BKR? The maximum junction temperature is 150 °C.
  9. What is the maximum continuous drain current (ID) of the NX7002BKR? The maximum continuous drain current is 0.33 A.
  10. Where can I find more detailed technical information about the NX7002BKR? Detailed technical information can be found in the datasheet and application notes available on Nexperia’s official website and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23.6 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta), 1.67W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.23
1,422

Please send RFQ , we will respond immediately.

Same Series
NX7002BKR
NX7002BKR
MOSFET N-CH 60V 270MA TO236AB

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

PMEG4010AESBYL
PMEG4010AESBYL
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOD993
PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
1PS79SB40,699
1PS79SB40,699
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD523
PMEG6010ELR-QX
PMEG6010ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX585-B4V7,135
BZX585-B4V7,135
Nexperia USA Inc.
DIODE ZENER 4.7V 300MW SOD523
PEMH11,315
PEMH11,315
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
74LVC1G3157GM-Q10X
74LVC1G3157GM-Q10X
Nexperia USA Inc.
IC MUX/DEMUX 2CH 6XSON
HEF4067BT,652
HEF4067BT,652
Nexperia USA Inc.
IC MUX/DEMUX 4X16 24SOIC
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74HC4538PW-Q100,11
74HC4538PW-Q100,11
Nexperia USA Inc.
IC MULTIVIBRATOR 25NS 16TSSOP
NXB0108PWJ
NXB0108PWJ
Nexperia USA Inc.
NXB0108PW/SOT360/TSSOP20