Overview
The BUK9Y6R0-60E,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's TrenchMOS technology family and is designed and qualified to the AEC-Q101 standard, ensuring reliability and performance in automotive and industrial applications. The MOSFET is housed in an LFPAK56 (Power SO8) package, which offers a compact and thermally efficient design.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 60 V |
| RDS(on) (Drain-Source On-Resistance) | 6.0 mΩ |
| ID (Continuous Drain Current) | 100 A |
| Ptot (Total Power Dissipation) | 194 W |
| VGS(th) (Gate-Source Threshold Voltage) | 1.0 - 2.5 V |
| Tj (Junction Temperature) | -55 to 150 °C |
| Package | LFPAK56 (Power SO8) |
Key Features
- Logic level N-channel MOSFET for easy interface with microcontrollers and other logic circuits.
- TrenchMOS technology for low on-resistance and high efficiency.
- AEC-Q101 qualified for use in automotive applications.
- Compact LFPAK56 (Power SO8) package for improved thermal performance.
- High continuous drain current of 100 A.
- Low gate charge for fast switching.
Applications
- Automotive systems: power steering, power windows, and other high-current applications.
- Industrial power systems: motor control, power supplies, and DC-DC converters.
- Power tools and equipment.
- Renewable energy systems: solar and wind power inverters.
Q & A
- What is the maximum drain-source voltage of the BUK9Y6R0-60E,115 MOSFET?
The maximum drain-source voltage is 60 V. - What is the on-resistance of the BUK9Y6R0-60E,115 MOSFET?
The on-resistance is 6.0 mΩ. - What is the continuous drain current of the BUK9Y6R0-60E,115 MOSFET?
The continuous drain current is 100 A. - What package type is used for the BUK9Y6R0-60E,115 MOSFET?
The MOSFET is housed in an LFPAK56 (Power SO8) package. - Is the BUK9Y6R0-60E,115 MOSFET suitable for automotive applications?
Yes, it is AEC-Q101 qualified for use in automotive applications. - What is the junction temperature range of the BUK9Y6R0-60E,115 MOSFET?
The junction temperature range is -55 to 150 °C. - What technology is used in the BUK9Y6R0-60E,115 MOSFET?
The MOSFET uses TrenchMOS technology. - What are some typical applications of the BUK9Y6R0-60E,115 MOSFET?
Typical applications include automotive systems, industrial power systems, power tools, and renewable energy systems. - What is the total power dissipation of the BUK9Y6R0-60E,115 MOSFET?
The total power dissipation is 194 W. - What is the gate-source threshold voltage range of the BUK9Y6R0-60E,115 MOSFET?
The gate-source threshold voltage range is 1.0 to 2.5 V.
