BUK9Y53-100B,115
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Nexperia USA Inc. BUK9Y53-100B,115

Manufacturer No:
BUK9Y53-100B,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 23A LFPAK56
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BUK9Y53-100B,115 is a high-performance N-channel TrenchMOS logic level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This device is designed for automotive and industrial applications, offering superior efficiency and reliability. The FET is packaged in a LFPAK56 (Power-SO8) package, which is known for its compact size and high power density. This makes it an ideal choice for applications where space is limited but high current handling is required.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)100 V
Continuous Drain Current (Id) @ 25°C23 A (Tc)
Maximum Power Dissipation (Pd)75 W (Tc)
Threshold Voltage (Vgs(th)) @ Id2 V @ 1 mA
Maximum Gate Voltage (Vgs)±15 V
On-Resistance (Rds On) @ Id, Vgs49 mΩ @ 10 A, 10 V
Input Capacitance (Ciss) @ Vds2130 pF @ 25 V
Gate Charge (Qg) @ Vgs18 nC @ 5 V
Operating Temperature (TJ)-55°C to 175°C
Package / CaseLFPAK56, Power-SO8
Mounting TypeSurface Mount

Key Features

  • High current handling capability of up to 23 A.
  • Low on-resistance of 49 mΩ, reducing power losses.
  • Compact LFPAK56 (Power-SO8) package for high power density.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Wide operating temperature range from -55°C to 175°C.
  • Logic level gate drive, allowing for easy integration with microcontrollers and other logic circuits.

Applications

The BUK9Y53-100B,115 is designed for a variety of applications, including:

  • Automotive systems: Suitable for use in automotive power management, motor control, and other high-current applications.
  • Industrial power management: Ideal for use in industrial power supplies, motor drives, and other high-power applications.
  • Power tools and equipment: Used in power tools, electric vehicles, and other equipment requiring high current handling.
  • Renewable energy systems: Can be used in solar and wind power systems for efficient power management.

Q & A

  1. What is the maximum drain to source voltage of the BUK9Y53-100B,115?
    The maximum drain to source voltage is 100 V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current rating is 23 A (Tc).
  3. What is the maximum power dissipation of the device?
    The maximum power dissipation is 75 W (Tc).
  4. What is the threshold voltage of the FET?
    The threshold voltage is 2 V @ 1 mA.
  5. What is the maximum gate voltage?
    The maximum gate voltage is ±15 V.
  6. What is the on-resistance of the FET?
    The on-resistance is 49 mΩ @ 10 A, 10 V.
  7. What is the operating temperature range of the device?
    The operating temperature range is -55°C to 175°C.
  8. What package type is used for the BUK9Y53-100B,115?
    The device is packaged in a LFPAK56 (Power-SO8) package.
  9. Is the BUK9Y53-100B,115 AEC-Q101 qualified?
    Yes, the device is AEC-Q101 qualified, making it suitable for automotive applications.
  10. What are some typical applications of the BUK9Y53-100B,115?
    Typical applications include automotive systems, industrial power management, power tools, and renewable energy systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:49mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:2130 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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