BUK9Y53-100B,115
  • Share:

Nexperia USA Inc. BUK9Y53-100B,115

Manufacturer No:
BUK9Y53-100B,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 23A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y53-100B,115 is a high-performance N-channel TrenchMOS logic level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This device is designed for automotive and industrial applications, offering superior efficiency and reliability. The FET is packaged in a LFPAK56 (Power-SO8) package, which is known for its compact size and high power density. This makes it an ideal choice for applications where space is limited but high current handling is required.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)100 V
Continuous Drain Current (Id) @ 25°C23 A (Tc)
Maximum Power Dissipation (Pd)75 W (Tc)
Threshold Voltage (Vgs(th)) @ Id2 V @ 1 mA
Maximum Gate Voltage (Vgs)±15 V
On-Resistance (Rds On) @ Id, Vgs49 mΩ @ 10 A, 10 V
Input Capacitance (Ciss) @ Vds2130 pF @ 25 V
Gate Charge (Qg) @ Vgs18 nC @ 5 V
Operating Temperature (TJ)-55°C to 175°C
Package / CaseLFPAK56, Power-SO8
Mounting TypeSurface Mount

Key Features

  • High current handling capability of up to 23 A.
  • Low on-resistance of 49 mΩ, reducing power losses.
  • Compact LFPAK56 (Power-SO8) package for high power density.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Wide operating temperature range from -55°C to 175°C.
  • Logic level gate drive, allowing for easy integration with microcontrollers and other logic circuits.

Applications

The BUK9Y53-100B,115 is designed for a variety of applications, including:

  • Automotive systems: Suitable for use in automotive power management, motor control, and other high-current applications.
  • Industrial power management: Ideal for use in industrial power supplies, motor drives, and other high-power applications.
  • Power tools and equipment: Used in power tools, electric vehicles, and other equipment requiring high current handling.
  • Renewable energy systems: Can be used in solar and wind power systems for efficient power management.

Q & A

  1. What is the maximum drain to source voltage of the BUK9Y53-100B,115?
    The maximum drain to source voltage is 100 V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current rating is 23 A (Tc).
  3. What is the maximum power dissipation of the device?
    The maximum power dissipation is 75 W (Tc).
  4. What is the threshold voltage of the FET?
    The threshold voltage is 2 V @ 1 mA.
  5. What is the maximum gate voltage?
    The maximum gate voltage is ±15 V.
  6. What is the on-resistance of the FET?
    The on-resistance is 49 mΩ @ 10 A, 10 V.
  7. What is the operating temperature range of the device?
    The operating temperature range is -55°C to 175°C.
  8. What package type is used for the BUK9Y53-100B,115?
    The device is packaged in a LFPAK56 (Power-SO8) package.
  9. Is the BUK9Y53-100B,115 AEC-Q101 qualified?
    Yes, the device is AEC-Q101 qualified, making it suitable for automotive applications.
  10. What are some typical applications of the BUK9Y53-100B,115?
    Typical applications include automotive systems, industrial power management, power tools, and renewable energy systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:49mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:2130 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$0.98
623

Please send RFQ , we will respond immediately.

Related Product By Categories

NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
BAT720,235
BAT720,235
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA TO236AB
PMEG2020EH/6X
PMEG2020EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
BZV55-B12,135
BZV55-B12,135
Nexperia USA Inc.
DIODE ZENER 12V 500MW LLDS
PDZ20BF
PDZ20BF
Nexperia USA Inc.
DIODE ZENER 20.39V 400MW SOD323
BC847BS-QX
BC847BS-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
PBSS4540Z,115
PBSS4540Z,115
Nexperia USA Inc.
TRANS NPN 40V 5A SOT223
BCP52-16,115
BCP52-16,115
Nexperia USA Inc.
TRANS PNP 60V 1A SOT223
PBSS304NXZ
PBSS304NXZ
Nexperia USA Inc.
PBSS304NX/SOT89/MPT3
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74HCT221D,112
74HCT221D,112
Nexperia USA Inc.
IC MULTIVIBRATOR 31NS 16SO