BUK9Y53-100B,115
  • Share:

Nexperia USA Inc. BUK9Y53-100B,115

Manufacturer No:
BUK9Y53-100B,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 23A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y53-100B,115 is a high-performance N-channel TrenchMOS logic level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This device is designed for automotive and industrial applications, offering superior efficiency and reliability. The FET is packaged in a LFPAK56 (Power-SO8) package, which is known for its compact size and high power density. This makes it an ideal choice for applications where space is limited but high current handling is required.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)100 V
Continuous Drain Current (Id) @ 25°C23 A (Tc)
Maximum Power Dissipation (Pd)75 W (Tc)
Threshold Voltage (Vgs(th)) @ Id2 V @ 1 mA
Maximum Gate Voltage (Vgs)±15 V
On-Resistance (Rds On) @ Id, Vgs49 mΩ @ 10 A, 10 V
Input Capacitance (Ciss) @ Vds2130 pF @ 25 V
Gate Charge (Qg) @ Vgs18 nC @ 5 V
Operating Temperature (TJ)-55°C to 175°C
Package / CaseLFPAK56, Power-SO8
Mounting TypeSurface Mount

Key Features

  • High current handling capability of up to 23 A.
  • Low on-resistance of 49 mΩ, reducing power losses.
  • Compact LFPAK56 (Power-SO8) package for high power density.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Wide operating temperature range from -55°C to 175°C.
  • Logic level gate drive, allowing for easy integration with microcontrollers and other logic circuits.

Applications

The BUK9Y53-100B,115 is designed for a variety of applications, including:

  • Automotive systems: Suitable for use in automotive power management, motor control, and other high-current applications.
  • Industrial power management: Ideal for use in industrial power supplies, motor drives, and other high-power applications.
  • Power tools and equipment: Used in power tools, electric vehicles, and other equipment requiring high current handling.
  • Renewable energy systems: Can be used in solar and wind power systems for efficient power management.

Q & A

  1. What is the maximum drain to source voltage of the BUK9Y53-100B,115?
    The maximum drain to source voltage is 100 V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current rating is 23 A (Tc).
  3. What is the maximum power dissipation of the device?
    The maximum power dissipation is 75 W (Tc).
  4. What is the threshold voltage of the FET?
    The threshold voltage is 2 V @ 1 mA.
  5. What is the maximum gate voltage?
    The maximum gate voltage is ±15 V.
  6. What is the on-resistance of the FET?
    The on-resistance is 49 mΩ @ 10 A, 10 V.
  7. What is the operating temperature range of the device?
    The operating temperature range is -55°C to 175°C.
  8. What package type is used for the BUK9Y53-100B,115?
    The device is packaged in a LFPAK56 (Power-SO8) package.
  9. Is the BUK9Y53-100B,115 AEC-Q101 qualified?
    Yes, the device is AEC-Q101 qualified, making it suitable for automotive applications.
  10. What are some typical applications of the BUK9Y53-100B,115?
    Typical applications include automotive systems, industrial power management, power tools, and renewable energy systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:49mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:2130 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$0.98
623

Please send RFQ , we will respond immediately.

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

PDZ3.9BGWX
PDZ3.9BGWX
Nexperia USA Inc.
DIODE ZENER 3.9V 365MW SOD123
BZX84-C68,235
BZX84-C68,235
Nexperia USA Inc.
DIODE ZENER 68V 250MW TO236AB
BZX84-C4V3,235
BZX84-C4V3,235
Nexperia USA Inc.
DIODE ZENER 4.3V 250MW TO236AB
PBSS4041SPN,115
PBSS4041SPN,115
Nexperia USA Inc.
TRANS NPN/PNP 60V 6.7A/5.9A 8SO
PUMD10/ZLF
PUMD10/ZLF
Nexperia USA Inc.
TRANS PREBIAS
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
PSMN1R4-30YLD/1X
PSMN1R4-30YLD/1X
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY
74HC2G66DP-Q100H
74HC2G66DP-Q100H
Nexperia USA Inc.
IC SWITCH DUAL SPST 8TSSOP
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74AVCH8T245PW,112
74AVCH8T245PW,112
Nexperia USA Inc.
IC TRANSLATION TXRX 3.6V 24TSSOP
74LVC1G80GV-Q100,1
74LVC1G80GV-Q100,1
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT SC74A
BZV55-C39
BZV55-C39
Nexperia USA Inc.
BZV55 SERIES - VOLTAGE REGULATOR