Overview
The BUK9Y40-55B,115 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a plastic SOT-669 (LFPAK) package. It is designed for high-performance applications requiring low on-state resistance and high current handling capabilities.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 55 | V |
| ID (Continuous Drain Current) | 26 | A |
| Ptot (Total Power Dissipation) | 59 | W |
| RDS(on) (On-State Resistance) | 36 mΩ @ 10V, 15A | mΩ |
| VGS(th) (Gate-Source Threshold Voltage) | 2 V @ 1 mA | V |
| Package | SOT-669 (LFPAK) | - |
Key Features
- Logic level N-channel enhancement mode FET
- TrenchMOS technology for low on-state resistance and high efficiency
- High current handling capability up to 26 A
- Low RDS(on) of 36 mΩ @ 10V, 15A
- Plastic SOT-669 (LFPAK) package for compact design and thermal performance
- RoHS compliant
Applications
- Power switching in automotive and industrial systems
- Motor control and drive systems
- Power supplies and DC-DC converters
- High-frequency switching applications
- General-purpose power switching where high current and low on-state resistance are required
Q & A
- What is the maximum drain-source voltage of the BUK9Y40-55B,115?
The maximum drain-source voltage (VDS) is 55 V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current (ID) is 26 A.
- What is the on-state resistance (RDS(on)) of the BUK9Y40-55B,115?
The on-state resistance (RDS(on)) is 36 mΩ @ 10V, 15A.
- What package type is used for the BUK9Y40-55B,115?
The device is packaged in a plastic SOT-669 (LFPAK) package.
- Is the BUK9Y40-55B,115 RoHS compliant?
Yes, the BUK9Y40-55B,115 is RoHS compliant.
- What are some typical applications for the BUK9Y40-55B,115?
Typical applications include power switching in automotive and industrial systems, motor control, power supplies, and high-frequency switching applications.
- What technology is used in the BUK9Y40-55B,115?
The device uses TrenchMOS technology.
- What is the gate-source threshold voltage (VGS(th)) of the BUK9Y40-55B,115?
The gate-source threshold voltage (VGS(th)) is 2 V @ 1 mA.
- What is the total power dissipation (Ptot) of the BUK9Y40-55B,115?
The total power dissipation (Ptot) is 59 W.
- Where can I find detailed specifications for the BUK9Y40-55B,115?
Detailed specifications can be found on the Nexperia website, as well as on distributor websites such as Digi-Key and Mouser.
