Overview
The BUK9Y3R0-40E,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is designed and qualified to the AEC-Q101 standard, making it suitable for high-performance automotive applications. It utilizes TrenchMOS technology and is packaged in the LFPAK56 (Power-SO8) format, which is optimized for thermal performance and reliability in demanding environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | BUK9Y3R0-40E | - |
| Package | LFPAK56; Power-SO8 (SOT669) | - |
| Channel Type | N-channel | - |
| VDS (Max) | 40 | V |
| RDSon (Max) @ VGS = 10 V | 2.5 | mΩ |
| RDSon (Max) @ VGS = 5 V | 3.0 | mΩ |
| Tj (Max) | 175 | °C |
| ID (Max) | 100 | A |
| QGD (Typ) | 10.7 | nC |
| Ptot (Max) | 194 | W |
| VGSth (Typ) | 1.7 | V |
| Automotive Qualified | Yes (AEC-Q101) | - |
Key Features
- TrenchMOS Technology: Utilizes advanced TrenchMOS technology for high performance and reliability.
- Logic Level Gate: Features a true logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C.
- High Thermal Performance: Suitable for thermally demanding environments with a maximum junction temperature of 175 °C.
- Repetitive Avalanche Rated: Designed to withstand repetitive avalanche conditions, enhancing its durability.
- Low On-Resistance: Offers low on-resistance (RDSon) of 2.5 mΩ at VGS = 10 V and 3.0 mΩ at VGS = 5 V.
Applications
- Automotive Systems: Ideal for 12 V automotive systems, including motors, lighting, and solenoid control.
- Start-Stop Micro-Hybrid Applications: Suitable for start-stop micro-hybrid systems due to its high performance and reliability.
- Transmission Control: Used in transmission control systems where high power and voltage handling are required.
- Ultra High Performance Power Switching: Applicable in various high-power switching applications requiring low on-resistance and high thermal performance.
Q & A
- What is the maximum drain-to-source voltage (VDS) of the BUK9Y3R0-40E,115 MOSFET?
The maximum drain-to-source voltage (VDS) is 40 V.
- What is the package type of the BUK9Y3R0-40E,115 MOSFET?
The package type is LFPAK56 (Power-SO8) or SOT669.
- What is the maximum junction temperature (Tj) of the BUK9Y3R0-40E,115 MOSFET?
The maximum junction temperature (Tj) is 175 °C.
- Is the BUK9Y3R0-40E,115 MOSFET automotive qualified?
Yes, it is qualified to the AEC-Q101 standard for automotive applications.
- What is the typical gate threshold voltage (VGSth) of the BUK9Y3R0-40E,115 MOSFET?
The typical gate threshold voltage (VGSth) is 1.7 V.
- What are the typical applications of the BUK9Y3R0-40E,115 MOSFET?
Typical applications include 12 V automotive systems, start-stop micro-hybrid systems, transmission control, and ultra high performance power switching.
- What is the maximum continuous drain current (ID) of the BUK9Y3R0-40E,115 MOSFET?
The maximum continuous drain current (ID) is 100 A.
- What is the on-resistance (RDSon) of the BUK9Y3R0-40E,115 MOSFET at VGS = 5 V?
The on-resistance (RDSon) at VGS = 5 V is 3.0 mΩ.
- Is the BUK9Y3R0-40E,115 MOSFET repetitive avalanche rated?
Yes, it is designed to be repetitive avalanche rated, enhancing its durability.
- What is the total power dissipation (Ptot) of the BUK9Y3R0-40E,115 MOSFET?
The total power dissipation (Ptot) is 194 W.
