BUK9Y38-100E,115
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Nexperia USA Inc. BUK9Y38-100E,115

Manufacturer No:
BUK9Y38-100E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 30A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BUK9Y38-100E,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is designed to meet the stringent requirements of the automotive industry, particularly those specified by the AEC-Q101 standard. It utilizes TrenchMOS technology and is packaged in the LFPAK56 (Power SO8) format, making it an ideal choice for applications demanding high reliability and efficiency.

This MOSFET is known for its excellent voltage resistance, high current handling, and low on-resistance characteristics, which make it suitable for a variety of applications including motor control, switching devices, and power management solutions.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Part Number BUK9Y38-100E,115
Package / Case SOT-669-5, LFPAK56
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 30 A
Rds On - Drain-Source Resistance 38 mΩ @ 5A, 5V
Vgs - Gate-Source Voltage ±10 V
Vgs th - Gate-Source Threshold Voltage 2.1 V @ 1mA
Qg - Gate Charge 21.6 nC @ 5V
Minimum Operating Temperature -55°C
Maximum Operating Temperature +175°C
Pd - Power Dissipation 94.9 W
Channel Mode Enhancement

Key Features

  • High Voltage Resistance: The MOSFET has a drain to source voltage (Vdss) of up to 100V, ensuring safe operation under high voltage conditions.
  • Low On-Resistance: With an Rds On of 38 mΩ @ 5A, 5V, it reduces energy consumption and heat in the circuit.
  • Fast Switching: The gate charge (Qg) of 21.6 nC @ 5V enables fast and stable switching operations.
  • Wide Operating Temperature Range: The device operates from -55°C to +175°C, making it adaptable to various application scenarios.
  • Automotive Qualified: Designed and qualified to meet the AEC-Q101 standard, ensuring reliable and efficient operation in automotive systems.
  • Convenient Packaging: Available in Tape & Reel (TR) and other packaging methods, facilitating mass production and automated assembly.

Applications

  • Motor Control: Used in motor control circuits for applications like variable frequency drives (VFDs), robotics, and electric vehicles.
  • Switching Devices: Employed as switching devices in digital and analog circuits, controlling electronic signals in data switches and multiplexers.
  • Power Management: Utilized in power management solutions, including power supplies and grid-tie inverters.
  • Renewable Energy Systems: Suitable for applications in renewable energy systems and power management solutions.

Q & A

  1. What is the part number of this MOSFET?

    The part number is BUK9Y38-100E,115.

  2. Who is the manufacturer of this MOSFET?

    The manufacturer is Nexperia USA Inc.

  3. What is the package type of this MOSFET?

    The package type is SOT-669-5, LFPAK56.

  4. What is the continuous drain current of this MOSFET?

    The continuous drain current is 30 A.

  5. What is the drain to source breakdown voltage of this MOSFET?

    The drain to source breakdown voltage is 100 V.

  6. What is the maximum operating temperature of this MOSFET?

    The maximum operating temperature is +175°C.

  7. Is this MOSFET RoHS compliant?

    Yes, this MOSFET is RoHS compliant.

  8. What are the typical applications of this MOSFET?

    Typical applications include motor control, switching devices, and power management solutions.

  9. What is the gate charge of this MOSFET?

    The gate charge is 21.6 nC @ 5V.

  10. Does this MOSFET meet automotive industry standards?

    Yes, it is designed and qualified to meet the AEC-Q101 standard.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:38mOhm @ 5A, 5V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:21.6 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:2541 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):94.9W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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