Overview
The BUK9Y19-55B/C2,115 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a plastic LFPAK56 (SOT669) package. It is designed to offer high performance and efficiency in various electronic applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | BUK9Y19-55B | - |
| Package | LFPAK56 (SOT669) | - |
| Channel Type | N-channel | - |
| VDS [max] | 55 | V |
| RDSon [max] @ VGS = 10 V | 17.3 | mΩ |
| RDSon [max] @ VGS = 5 V | 19 | mΩ |
| RDSon [max] @ VGS = 4.5 V; @25°C | 21 | mΩ |
| Tj [max] | 175 | °C |
| ID [max] | 46 | A |
| QGD [typ] | 8 | nC |
| Ptot [max] | 85 | W |
| Qr [typ] | 38 | nC |
| VGSth [typ] | 1.5 | V |
| Automotive Qualified | Yes | - |
Key Features
- TrenchMOS Technology: Enhances performance with low on-state resistance and fast switching times.
- Logic Level Operation: Compatible with standard logic levels, making it easy to integrate into various digital systems.
- High Current Capability: Maximum drain current of 46 A, suitable for high-power applications.
- Low On-State Resistance: RDSon as low as 17.3 mΩ at VGS = 10 V, reducing power losses.
- High Junction Temperature: Maximum junction temperature of 175°C, ensuring reliability in demanding environments.
- Automotive Qualified: Suitable for use in automotive applications, meeting stringent reliability and performance standards.
Applications
- Automotive Systems: Used in power management, motor control, and other high-power automotive applications.
- Industrial Power Systems: Suitable for power supplies, motor drives, and other industrial power management systems.
- Consumer Electronics: Applied in power management circuits of consumer electronics such as laptops, tablets, and smartphones.
- Power Supplies: Used in switch-mode power supplies and DC-DC converters due to its high efficiency and reliability.
- Wearables and Mobile Devices: Utilized in power management solutions for wearables and mobile devices to enhance battery life and efficiency.
Q & A
- What is the maximum drain-source voltage (VDS) of the BUK9Y19-55B?
The maximum drain-source voltage (VDS) is 55 V.
- What is the package type of the BUK9Y19-55B?
The package type is LFPAK56 (SOT669).
- What is the maximum on-state resistance (RDSon) at VGS = 10 V?
The maximum on-state resistance (RDSon) at VGS = 10 V is 17.3 mΩ.
- Is the BUK9Y19-55B automotive qualified?
Yes, the BUK9Y19-55B is automotive qualified.
- What is the maximum junction temperature (Tj) of the BUK9Y19-55B?
The maximum junction temperature (Tj) is 175°C.
- What is the typical gate-source threshold voltage (VGSth)?
The typical gate-source threshold voltage (VGSth) is 1.5 V.
- What are the key applications of the BUK9Y19-55B?
The key applications include automotive systems, industrial power systems, consumer electronics, power supplies, and wearables.
- What technology does the BUK9Y19-55B use?
The BUK9Y19-55B uses TrenchMOS technology.
- What is the maximum drain current (ID) of the BUK9Y19-55B?
The maximum drain current (ID) is 46 A.
- Is the BUK9Y19-55B compliant with EU RoHS regulations?
Yes, the BUK9Y19-55B is compliant with EU RoHS regulations.
