Overview
The BUK98150-55A/CU,135 is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device is designed using TrenchMOS technology and is housed in a plastic SOT223 (SC-73) package. It is known for its high performance and efficiency, making it suitable for a wide range of applications, particularly in power management and high-speed switching scenarios.
Key Specifications
| Parameter | Value |
|---|---|
| Type number | BUK98150-55A |
| Package | SOT223 (SC-73) |
| Channel type | N-channel |
| Number of transistors | 1 |
| VDS [max] (V) | 55 |
| RDSon [max] @ VGS = 10 V (mΩ) | 137 |
| RDSon [max] @ VGS = 5 V (mΩ) | 150 |
| RDSon [max] @ VGS = 4.5 V; @25°C (mΩ) | 161 |
| Tj [max] (°C) | 150 |
| ID [max] (A) | 5.5 |
| QGD [typ] (nC) | 2.8 |
| Ptot [max] (W) | 8 |
| Qr [typ] (nC) | 30 |
| VGSth [typ] (V) | 1.5 |
| Automotive qualified | Yes |
| Ciss [typ] (pF) | 240 |
| Coss [typ] (pF) | 53 |
Key Features
- Logic level N-channel enhancement mode FET, making it easy to drive from standard logic levels.
- Low on-state resistance (RDSon) for efficient power handling.
- High maximum drain-source voltage (VDS) of 55 V.
- Maximum drain current (ID) of 5.5 A.
- Compact SOT223 (SC-73) package for space-saving designs.
- Automotive qualified, ensuring reliability in demanding automotive applications.
- High thermal performance with a maximum junction temperature (Tj) of 150°C.
Applications
The BUK98150-55A/CU,135 is versatile and can be used in various applications, including:
- Automotive systems: Suitable for use in automotive power management and control systems due to its automotive qualification.
- Power management: Ideal for DC-DC converters, power supplies, and other power management circuits.
- Industrial control: Used in industrial control systems, motor control, and power switching applications.
- Consumer electronics: Applicable in consumer electronics for power efficient designs.
- High-speed switching: Optimized for high-speed switching applications due to its low RDSon and fast switching times.
Q & A
- What is the maximum drain-source voltage (VDS) of the BUK98150-55A/CU,135?
The maximum drain-source voltage (VDS) is 55 V. - What is the maximum drain current (ID) of this FET?
The maximum drain current (ID) is 5.5 A. - What package type is used for the BUK98150-55A/CU,135?
The device is housed in a SOT223 (SC-73) package. - Is the BUK98150-55A/CU,135 automotive qualified?
Yes, it is automotive qualified. - What is the typical on-state resistance (RDSon) at VGS = 10 V?
The typical on-state resistance (RDSon) at VGS = 10 V is 137 mΩ. - What is the maximum junction temperature (Tj) of this FET?
The maximum junction temperature (Tj) is 150°C. - What are some common applications of the BUK98150-55A/CU,135?
Common applications include automotive systems, power management, industrial control, consumer electronics, and high-speed switching. - How does the BUK98150-55A/CU,135 benefit from TrenchMOS technology?
The TrenchMOS technology provides low on-state resistance and high efficiency, making it suitable for power management and high-speed switching applications. - Where can I find more detailed specifications and application notes for the BUK98150-55A/CU,135?
You can find detailed specifications and application notes on the Nexperia website or through distributors like Mouser and Digi-Key. - Is the BUK98150-55A/CU,135 available for sampling?
Yes, samples can be ordered via Nexperia's sales organization.
