BUK7Y1R7-40HX
  • Share:

Nexperia USA Inc. BUK7Y1R7-40HX

Manufacturer No:
BUK7Y1R7-40HX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 120A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7Y1R7-40HX is an automotive-qualified N-channel MOSFET produced by Nexperia USA Inc. This component utilizes the advanced Trench 9 low ohmic superjunction technology, ensuring high performance and efficiency. It is housed in a robust LFPAK56 package, which is designed to handle demanding applications. The MOSFET is part of Nexperia’s extensive portfolio of power management solutions, catering to various industries including automotive, industrial, and consumer electronics.

Key Specifications

ParameterValue
Type NumberBUK7Y1R7-40H
PackageLFPAK56; Power-SO8 (SOT669)
Channel TypeN-channel
VDS [max]40 V
RDSon [max] @ VGS = 10 V1.7 mΩ
Tj [max]175 °C
ID [max]120 A
QGD [typ]10 nC
QG(tot) [typ] @ VGS = 10 V56 nC
Ptot [max]294 W
Qr [typ]25 nC
VGSth [typ]3 V
Automotive QualifiedYes (AEC-Q101)
Ciss [typ]4095 pF
Coss [typ]1083 pF

Key Features

  • Advanced Trench 9 low ohmic superjunction technology for high efficiency and low on-resistance.
  • Robust LFPAK56 package (Power-SO8) designed for high reliability and thermal performance.
  • AEC-Q101 qualified, ensuring compliance with automotive standards.
  • High current handling capability with a maximum drain current of 120 A.
  • Low thermal resistance and high power dissipation capability.
  • Moisture Sensitivity Level (MSL) 1, indicating unlimited shelf life.

Applications

  • Automotive systems, including start-stop micro-hybrid applications and transmission control.
  • Industrial power management and control systems.
  • Ultra-high performance power switching applications.
  • Consumer and mobile electronics requiring high efficiency and reliability.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK7Y1R7-40HX?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the on-resistance (RDSon) of the BUK7Y1R7-40HX at VGS = 10 V?
    The on-resistance (RDSon) is 1.7 mΩ at VGS = 10 V.
  3. What is the maximum junction temperature (Tj) of the BUK7Y1R7-40HX?
    The maximum junction temperature (Tj) is 175 °C.
  4. Is the BUK7Y1R7-40HX automotive qualified?
    Yes, it is AEC-Q101 qualified.
  5. What is the package type of the BUK7Y1R7-40HX?
    The package type is LFPAK56; Power-SO8 (SOT669).
  6. What is the maximum drain current (ID) of the BUK7Y1R7-40HX?
    The maximum drain current (ID) is 120 A.
  7. What are some typical applications of the BUK7Y1R7-40HX?
    Typical applications include automotive systems, industrial power management, ultra-high performance power switching, and consumer electronics.
  8. What is the moisture sensitivity level (MSL) of the BUK7Y1R7-40HX?
    The moisture sensitivity level (MSL) is 1, indicating unlimited shelf life.
  9. Where can I find detailed datasheets and technical support for the BUK7Y1R7-40HX?
    Detailed datasheets and technical support can be found on the Nexperia website or through their local sales office and distributors.
  10. Can I order samples of the BUK7Y1R7-40HX?
    Yes, samples can be ordered via Nexperia’s sales organization or through their network of global and regional distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:6142 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):294W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$3.00
231

Please send RFQ , we will respond immediately.

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

PESD2CANFD24V-TR
PESD2CANFD24V-TR
Nexperia USA Inc.
TVS DIODE 24VWM 42VC TO236AB
BZX84-C36,235
BZX84-C36,235
Nexperia USA Inc.
DIODE ZENER 36V 250MW TO236AB
PDZ3.9BGWX
PDZ3.9BGWX
Nexperia USA Inc.
DIODE ZENER 3.9V 365MW SOD123
BZX84-B22,215
BZX84-B22,215
Nexperia USA Inc.
DIODE ZENER 22V 250MW TO236AB
BC817-40QCH-QZ
BC817-40QCH-QZ
Nexperia USA Inc.
TRANS NPN 45V 0.5A DFN1412D-3
PBSS4021NX,115
PBSS4021NX,115
Nexperia USA Inc.
TRANS NPN 20V 7A SOT89
74HC4851D-Q100,118
74HC4851D-Q100,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH ANLG 16SOIC
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74HCT04PW,118
74HCT04PW,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14TSSOP
74HC573PW,118
74HC573PW,118
Nexperia USA Inc.
IC LATCH OCTAL D 3STATE 20TSSOP
HEF4047BT,652
HEF4047BT,652
Nexperia USA Inc.
IC MULTIVIBRATOR 50NS 14SO
HEF4094BTTJ
HEF4094BTTJ
Nexperia USA Inc.
IC SHIFT/STORE REGISTER