BSS138BKW,115
  • Share:

Nexperia USA Inc. BSS138BKW,115

Manufacturer No:
BSS138BKW,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 320MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138BKW,115 is an N-channel logic level enhancement mode field-effect transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed for low voltage applications and features a compact SOT323 (SC-70) package. It is suitable for use in various digital and analog circuits where low power consumption and high switching speed are required. The BSS138BKW,115 is particularly versatile due to its efficient switching capabilities, making it ideal for a variety of applications, including automotive systems, as it is AEC-Q101 qualified.

Key Specifications

Attribute Value
FET Type N-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (RDSon) @ VGS = 10 V 1.6 Ω
Rated Power Dissipation 260 mW
Gate Charge (Qg) 0.6 nC
Gate-Source Voltage (Vgss) 20 V
Drain Current (ID) 320 mA
Turn-on Delay Time 5 ns
Turn-off Delay Time 38 ns
Rise Time 5 ns
Fall Time 20 ns
Operating Temperature Range -55°C to +150°C
Gate Source Threshold (VGSth) 1.1 V
Input Capacitance 42 pF
Package Style SOT-323 (SC-70)
Mounting Method Surface Mount

Key Features

  • Compact SOT323 (SC-70) package, making it suitable for space-constrained applications.
  • Low on-resistance (RDSon) of 1.6 Ω at VGS = 10 V, ensuring efficient switching.
  • High switching speed with turn-on and turn-off delay times of 5 ns and 38 ns, respectively.
  • Low power consumption with a rated power dissipation of 260 mW.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Wide operating temperature range from -55°C to +150°C.
  • Low gate charge (Qg) of 0.6 nC, facilitating fast switching operations.

Applications

  • Low voltage digital and analog circuits.
  • Automotive systems due to its AEC-Q101 qualification.
  • Pulse-width modulation (PWM) applications requiring efficient switching at low voltages.
  • General-purpose switching in various electronic devices.
  • Power management circuits where low power consumption and high switching speed are critical.

Q & A

  1. Q: What is the maximum drain-to-source voltage (Vdss) of the BSS138BKW,115?

    A: The maximum drain-to-source voltage (Vdss) is 60 V.

  2. Q: What is the typical gate-source threshold voltage (VGSth) of the BSS138BKW,115?

    A: The typical gate-source threshold voltage (VGSth) is 1.1 V.

  3. Q: Can the BSS138BKW,115 be used for PWM applications?

    A: Yes, the BSS138BKW,115 is suitable for pulse-width modulation (PWM) applications requiring efficient switching at low voltages.

  4. Q: What is the package style of the BSS138BKW,115?

    A: The package style is SOT-323 (SC-70).

  5. Q: Is the BSS138BKW,115 AEC-Q101 qualified?

    A: Yes, the BSS138BKW,115 is AEC-Q101 qualified, making it suitable for automotive applications.

  6. Q: What is the maximum operating temperature of the BSS138BKW,115?

    A: The maximum operating temperature is +150°C.

  7. Q: What is the rated power dissipation of the BSS138BKW,115?

    A: The rated power dissipation is 260 mW.

  8. Q: What is the turn-on delay time of the BSS138BKW,115?

    A: The turn-on delay time is 5 ns.

  9. Q: What is the input capacitance of the BSS138BKW,115?

    A: The input capacitance is 42 pF.

  10. Q: Is the BSS138BKW,115 lead-free and halogen-free?

    A: Yes, the BSS138BKW,115 is lead-free and halogen-free according to Nexperia's definitions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 320mA, 10V
Vgs(th) (Max) @ Id:1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:56 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):260mW (Ta), 830mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.36
425

Please send RFQ , we will respond immediately.

Same Series
BSS138BKW-BX
BSS138BKW-BX
MOSFET N-CHANNEL 60V 320MA SC70

Related Product By Categories

STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

PRTR5V0U2AX,215
PRTR5V0U2AX,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
BAT54S-QR
BAT54S-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAT720,235
BAT720,235
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA TO236AB
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
BC869,115
BC869,115
Nexperia USA Inc.
TRANS PNP 20V 1A SOT89
PBSS4021PT,215
PBSS4021PT,215
Nexperia USA Inc.
TRANS PNP 20V 3.5A TO236AB
BUK9K6R2-40E,115
BUK9K6R2-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
74HC244D,652
74HC244D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HC11PW,118
74HC11PW,118
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14TSSOP
HEF4094BTTJ
HEF4094BTTJ
Nexperia USA Inc.
IC SHIFT/STORE REGISTER
PDZ15BGW,115
PDZ15BGW,115
Nexperia USA Inc.
ZENER DIODE