BSS138BKW,115
  • Share:

Nexperia USA Inc. BSS138BKW,115

Manufacturer No:
BSS138BKW,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 320MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138BKW,115 is an N-channel logic level enhancement mode field-effect transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed for low voltage applications and features a compact SOT323 (SC-70) package. It is suitable for use in various digital and analog circuits where low power consumption and high switching speed are required. The BSS138BKW,115 is particularly versatile due to its efficient switching capabilities, making it ideal for a variety of applications, including automotive systems, as it is AEC-Q101 qualified.

Key Specifications

Attribute Value
FET Type N-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (RDSon) @ VGS = 10 V 1.6 Ω
Rated Power Dissipation 260 mW
Gate Charge (Qg) 0.6 nC
Gate-Source Voltage (Vgss) 20 V
Drain Current (ID) 320 mA
Turn-on Delay Time 5 ns
Turn-off Delay Time 38 ns
Rise Time 5 ns
Fall Time 20 ns
Operating Temperature Range -55°C to +150°C
Gate Source Threshold (VGSth) 1.1 V
Input Capacitance 42 pF
Package Style SOT-323 (SC-70)
Mounting Method Surface Mount

Key Features

  • Compact SOT323 (SC-70) package, making it suitable for space-constrained applications.
  • Low on-resistance (RDSon) of 1.6 Ω at VGS = 10 V, ensuring efficient switching.
  • High switching speed with turn-on and turn-off delay times of 5 ns and 38 ns, respectively.
  • Low power consumption with a rated power dissipation of 260 mW.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Wide operating temperature range from -55°C to +150°C.
  • Low gate charge (Qg) of 0.6 nC, facilitating fast switching operations.

Applications

  • Low voltage digital and analog circuits.
  • Automotive systems due to its AEC-Q101 qualification.
  • Pulse-width modulation (PWM) applications requiring efficient switching at low voltages.
  • General-purpose switching in various electronic devices.
  • Power management circuits where low power consumption and high switching speed are critical.

Q & A

  1. Q: What is the maximum drain-to-source voltage (Vdss) of the BSS138BKW,115?

    A: The maximum drain-to-source voltage (Vdss) is 60 V.

  2. Q: What is the typical gate-source threshold voltage (VGSth) of the BSS138BKW,115?

    A: The typical gate-source threshold voltage (VGSth) is 1.1 V.

  3. Q: Can the BSS138BKW,115 be used for PWM applications?

    A: Yes, the BSS138BKW,115 is suitable for pulse-width modulation (PWM) applications requiring efficient switching at low voltages.

  4. Q: What is the package style of the BSS138BKW,115?

    A: The package style is SOT-323 (SC-70).

  5. Q: Is the BSS138BKW,115 AEC-Q101 qualified?

    A: Yes, the BSS138BKW,115 is AEC-Q101 qualified, making it suitable for automotive applications.

  6. Q: What is the maximum operating temperature of the BSS138BKW,115?

    A: The maximum operating temperature is +150°C.

  7. Q: What is the rated power dissipation of the BSS138BKW,115?

    A: The rated power dissipation is 260 mW.

  8. Q: What is the turn-on delay time of the BSS138BKW,115?

    A: The turn-on delay time is 5 ns.

  9. Q: What is the input capacitance of the BSS138BKW,115?

    A: The input capacitance is 42 pF.

  10. Q: Is the BSS138BKW,115 lead-free and halogen-free?

    A: Yes, the BSS138BKW,115 is lead-free and halogen-free according to Nexperia's definitions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 320mA, 10V
Vgs(th) (Max) @ Id:1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:56 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):260mW (Ta), 830mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.36
425

Please send RFQ , we will respond immediately.

Same Series
BSS138BKW-BX
BSS138BKW-BX
MOSFET N-CHANNEL 60V 320MA SC70

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

BAT854CW,115
BAT854CW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PDZ3.3B,115
PDZ3.3B,115
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW SOD323
BC847CMB,315
BC847CMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
PBSS4160TVL
PBSS4160TVL
Nexperia USA Inc.
TRANS NPN 60V 1A TO236AB
PDTA124EU,135
PDTA124EU,135
Nexperia USA Inc.
NEXPERIA PDTA124EU - SMALL SIGNA
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PDTC123JT,215
PDTC123JT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
74HCT245D,652
74HCT245D,652
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74LVC1G79GW,165
74LVC1G79GW,165
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 5TSSOP
74LVC138ADB,118
74LVC138ADB,118
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16SSOP