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BSH205G2AR
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Nexperia USA Inc. BSH205G2AR

Manufacturer No:
BSH205G2AR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.6A TO236AB
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BSH205G2AR is a 20 V, P-channel Trench MOSFET produced by Nexperia USA Inc. This device is an automotive-qualified, enhancement mode Field-Effect Transistor (FET) packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD). It utilizes Trench MOSFET technology, offering low threshold voltage, very fast switching, and enhanced power dissipation capabilities. The BSH205G2AR is designed for high-performance applications requiring reliability and efficiency.

Key Specifications

ParameterValue
Type numberBSH205G2AR
PackageSOT23 (TO-236AB)
Channel typeP-channel
VDS [max]20 V
RDSon [max] @ VGS = 4.5 V; @25 °C0.097 Ω
RDSon [max] @ VGS = 2.5 V0.152 Ω
Tj [max]175 °C
ID [max]2.6 A
QGD [typ]1.2 nC
QG(tot) [typ] @ VGS = 4.5 V4.6 nC
Ptot [max]610 mW
Qr [typ]1 nC
VGSth [typ]0.65 V
Automotive qualifiedAEC-Q101
Ciss [typ]421 pF
Coss [typ]38 pF

Key Features

  • Low threshold voltage
  • Low on-state resistance (RDSon) of 0.097 Ω at VGS = 4.5 V
  • Trench MOSFET technology for enhanced performance
  • Very fast switching capabilities
  • AEC-Q101 qualified for automotive applications
  • Extended temperature range up to 175 °C
  • High power dissipation of 610 mW

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
  • Automotive systems
  • Industrial and power management applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSH205G2AR?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the on-state resistance (RDSon) at VGS = 4.5 V?
    The on-state resistance (RDSon) at VGS = 4.5 V is 0.097 Ω.
  3. What is the maximum junction temperature (Tj)?
    The maximum junction temperature (Tj) is 175 °C.
  4. Is the BSH205G2AR automotive qualified?
    Yes, it is AEC-Q101 qualified.
  5. What is the package type of the BSH205G2AR?
    The package type is SOT23 (TO-236AB).
  6. What are the typical gate-source threshold voltage (VGSth) and gate-drain charge (QGD)?
    The typical gate-source threshold voltage (VGSth) is 0.65 V, and the typical gate-drain charge (QGD) is 1.2 nC.
  7. What is the maximum continuous drain current (ID)?
    The maximum continuous drain current (ID) is 2.6 A.
  8. What are some common applications of the BSH205G2AR?
    Common applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.
  9. Is the BSH205G2AR RoHS compliant?
    Yes, the BSH205G2AR is RoHS compliant.
  10. What is the power dissipation (Ptot) of the BSH205G2AR?
    The power dissipation (Ptot) is 610 mW.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:118mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:421 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):610mW (Ta), 10W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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