2N7002/HAMR
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Nexperia USA Inc. 2N7002/HAMR

Manufacturer No:
2N7002/HAMR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002/HAMR is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET utilizes Trench MOSFET technology and is packaged in a plastic SOT23 package. It is designed for low-power applications and offers high efficiency and reliability.

Key Specifications

ParameterValue
TypeN-channel enhancement mode MOSFET
Drain-Source Voltage (Vds)60 V
Continuous Drain Current (Id)300 mA
On Resistance (Rds(on))2.8 ohms at Vgs = 10 V, Id = 500 mA
Threshold Voltage (Vgs(th))2 V
PackageSOT23 (TO-236AB)
Power Dissipation (Ptot)830 mW

Key Features

  • N-channel enhancement mode MOSFET
  • Trench MOSFET technology for improved performance
  • Low on-resistance (Rds(on)) of 2.8 ohms at Vgs = 10 V, Id = 500 mA
  • High drain-source voltage (Vds) of 60 V
  • Continuous drain current (Id) of 300 mA
  • Compact SOT23 package
  • Rohs and Pb-free compliant

Applications

The 2N7002/HAMR MOSFET is suitable for a variety of low-power applications, including:

  • General-purpose switching
  • Load switching
  • Power management in small electronic devices
  • Automotive and industrial control systems
  • Consumer electronics

Q & A

  1. What is the drain-source voltage (Vds) of the 2N7002/HAMR MOSFET?
    The drain-source voltage (Vds) is 60 V.
  2. What is the continuous drain current (Id) of the 2N7002/HAMR MOSFET?
    The continuous drain current (Id) is 300 mA.
  3. What is the on-resistance (Rds(on)) of the 2N7002/HAMR MOSFET?
    The on-resistance (Rds(on)) is 2.8 ohms at Vgs = 10 V, Id = 500 mA.
  4. What package type is used for the 2N7002/HAMR MOSFET?
    The package type is SOT23 (TO-236AB).
  5. Is the 2N7002/HAMR MOSFET RoHS and Pb-free compliant?
    Yes, it is RoHS and Pb-free compliant.
  6. What is the threshold voltage (Vgs(th)) of the 2N7002/HAMR MOSFET?
    The threshold voltage (Vgs(th)) is 2 V.
  7. What is the power dissipation (Ptot) of the 2N7002/HAMR MOSFET?
    The power dissipation (Ptot) is 830 mW.
  8. What technology is used in the 2N7002/HAMR MOSFET?
    The 2N7002/HAMR MOSFET uses Trench MOSFET technology.
  9. What are some common applications of the 2N7002/HAMR MOSFET?
    Common applications include general-purpose switching, load switching, power management in small electronic devices, automotive and industrial control systems, and consumer electronics.
  10. Where can I purchase the 2N7002/HAMR MOSFET?
    You can purchase the 2N7002/HAMR MOSFET from various electronic component distributors such as Heisener, Digi-Key, and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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