2N7002/HAMR
  • Share:

Nexperia USA Inc. 2N7002/HAMR

Manufacturer No:
2N7002/HAMR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002/HAMR is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET utilizes Trench MOSFET technology and is packaged in a plastic SOT23 package. It is designed for low-power applications and offers high efficiency and reliability.

Key Specifications

ParameterValue
TypeN-channel enhancement mode MOSFET
Drain-Source Voltage (Vds)60 V
Continuous Drain Current (Id)300 mA
On Resistance (Rds(on))2.8 ohms at Vgs = 10 V, Id = 500 mA
Threshold Voltage (Vgs(th))2 V
PackageSOT23 (TO-236AB)
Power Dissipation (Ptot)830 mW

Key Features

  • N-channel enhancement mode MOSFET
  • Trench MOSFET technology for improved performance
  • Low on-resistance (Rds(on)) of 2.8 ohms at Vgs = 10 V, Id = 500 mA
  • High drain-source voltage (Vds) of 60 V
  • Continuous drain current (Id) of 300 mA
  • Compact SOT23 package
  • Rohs and Pb-free compliant

Applications

The 2N7002/HAMR MOSFET is suitable for a variety of low-power applications, including:

  • General-purpose switching
  • Load switching
  • Power management in small electronic devices
  • Automotive and industrial control systems
  • Consumer electronics

Q & A

  1. What is the drain-source voltage (Vds) of the 2N7002/HAMR MOSFET?
    The drain-source voltage (Vds) is 60 V.
  2. What is the continuous drain current (Id) of the 2N7002/HAMR MOSFET?
    The continuous drain current (Id) is 300 mA.
  3. What is the on-resistance (Rds(on)) of the 2N7002/HAMR MOSFET?
    The on-resistance (Rds(on)) is 2.8 ohms at Vgs = 10 V, Id = 500 mA.
  4. What package type is used for the 2N7002/HAMR MOSFET?
    The package type is SOT23 (TO-236AB).
  5. Is the 2N7002/HAMR MOSFET RoHS and Pb-free compliant?
    Yes, it is RoHS and Pb-free compliant.
  6. What is the threshold voltage (Vgs(th)) of the 2N7002/HAMR MOSFET?
    The threshold voltage (Vgs(th)) is 2 V.
  7. What is the power dissipation (Ptot) of the 2N7002/HAMR MOSFET?
    The power dissipation (Ptot) is 830 mW.
  8. What technology is used in the 2N7002/HAMR MOSFET?
    The 2N7002/HAMR MOSFET uses Trench MOSFET technology.
  9. What are some common applications of the 2N7002/HAMR MOSFET?
    Common applications include general-purpose switching, load switching, power management in small electronic devices, automotive and industrial control systems, and consumer electronics.
  10. Where can I purchase the 2N7002/HAMR MOSFET?
    You can purchase the 2N7002/HAMR MOSFET from various electronic component distributors such as Heisener, Digi-Key, and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.26
1,939

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

PDZ33B,115
PDZ33B,115
Nexperia USA Inc.
DIODE ZENER 33V 400MW SOD323
BZX84J-B8V2,115
BZX84J-B8V2,115
Nexperia USA Inc.
DIODE ZENER 8.2V 550MW SOD323F
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCP52-10TF
BCP52-10TF
Nexperia USA Inc.
BCP52-10T/SOT223/SC-73
BC847A/SNVL
BC847A/SNVL
Nexperia USA Inc.
TRANS NPN 45V 0.1A TO236AB
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
PMPB20ENZ
PMPB20ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 7.2A DFN2020MD-6
74VHC245PW,118
74VHC245PW,118
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20TSSOP
74LVC1G00GW-Q100H
74LVC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC00AD-Q100J
74LVC00AD-Q100J
Nexperia USA Inc.
IC GATE NAND 4CH 2-INP 14SO
74AHC373PW,118
74AHC373PW,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
74HCT154DB,112
74HCT154DB,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X4:16 24SSOP