2N7002KW-TP
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Micro Commercial Co 2N7002KW-TP

Manufacturer No:
2N7002KW-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 340MA SOT323
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002KW-TP is an N-channel enhancement mode field effect transistor (FET) produced by Micro Commercial Co. This component is designed for use in a variety of electronic applications where low on-resistance, fast switching speeds, and compact packaging are essential. The 2N7002KW-TP is housed in a small SOT-323 package, making it ideal for space-constrained designs.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Maximum Drain Current (Continuous) ID 310 mA
Maximum Drain Current (Pulsed) ID 1.2 A
Operating Junction Temperature Range TJ -55 to +150 °C
Storage Temperature Range TSTG -55 to +150 °C
Total Device Dissipation PD 300 mW
Thermal Resistance, Junction to Ambient RθJA 410 °C/W

Key Features

  • Low on-resistance
  • Low gate threshold voltage (minimum 1.1 V)
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface mount package (SOT-323)
  • Pb-free and RoHS compliant
  • High ESD protection (HBM = 1000 V, CDM = 1500 V)

Applications

  • General-purpose switching applications
  • Low-voltage power management
  • Audio and video switching
  • Motor control and drive circuits
  • Power supply and DC-DC converters
  • Automotive and industrial control systems

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KW-TP?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the gate-source voltage range for the 2N7002KW-TP?

    The gate-source voltage (VGSS) range is ±20 V.

  3. What is the maximum continuous drain current for the 2N7002KW-TP?

    The maximum continuous drain current (ID) is 310 mA.

  4. What is the operating junction temperature range for the 2N7002KW-TP?

    The operating junction temperature range (TJ) is -55 to +150 °C.

  5. Is the 2N7002KW-TP Pb-free and RoHS compliant?
  6. What is the thermal resistance, junction to ambient, for the 2N7002KW-TP?

    The thermal resistance, junction to ambient (RθJA), is 410 °C/W.

  7. What are the typical applications for the 2N7002KW-TP?

    Typical applications include general-purpose switching, low-voltage power management, audio and video switching, motor control, and power supply circuits.

  8. What is the package type of the 2N7002KW-TP?

    The package type is SOT-323.

  9. Does the 2N7002KW-TP have high ESD protection?
  10. What is the minimum gate threshold voltage for the 2N7002KW-TP?

    The minimum gate threshold voltage is 1.1 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):200mW
Operating Temperature:-55°C ~ 150°C
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number 2N7002KW-TP 2N7002W-TP 2N7002K-TP 2N7002KA-TP 2N7002KT-TP
Manufacturer Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co
Product Status Active Active Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 340mA (Ta) 115mA (Ta) 340mA (Ta) 340mA (Tj) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2V @ 250µA 1V @ 1mA 2.5V @ 250µA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - - - -
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 50 pF @ 25 V 40 pF @ 10 V 40 pF @ 10 V 40 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 200mW 200mW (Ta) 350mW (Ta) 350mW 350mW
Operating Temperature -55°C ~ 150°C -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323 SOT-23 SOT-23 SOT-523
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523

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