BC847C-TP
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Micro Commercial Co BC847C-TP

Manufacturer No:
BC847C-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847C-TP is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Micro Commercial Co. It is part of the BC847 series, known for its versatility in various electronic applications. This transistor is housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient designs. The BC847C-TP is characterized by its high current gain, low voltage drop, and robust thermal performance, making it an ideal choice for both switching and amplification tasks.

Key Specifications

ParameterValue
Collector-Base Voltage (Vcbo)45 V
Collector-Emitter Voltage (Vceo)45 V
Emitter-Base Voltage (Vebo)6 V
Collector-Emitter Saturation Voltage (Vce(sat))500 mV @ 5mA, 100mA
Power Dissipation (Pd)225 mW
Gain Bandwidth Product (fT)100 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA, 5V
Maximum Junction Temperature (Tj)150°C
PackageSOT23 (TO-236AB)
Number of Terminations3

Key Features

  • High current gain (hFE) of 420 @ 2mA, 5V, ensuring strong amplification capabilities.
  • Low collector-emitter saturation voltage (Vce(sat)) of 500 mV, reducing power consumption and heat generation.
  • Compact SOT23 package, suitable for space-constrained designs.
  • High maximum junction temperature (Tj) of 150°C, enhancing reliability in various operating conditions.
  • General-purpose use in both switching and amplification applications.

Applications

The BC847C-TP is versatile and can be used in a wide range of applications, including:

  • General-purpose switching and amplification circuits.
  • Automotive systems due to its robust thermal performance and reliability.
  • Industrial control systems where high current gain and low voltage drop are essential.
  • Consumer electronics, such as audio amplifiers and power supplies.
  • Mobile and wearable devices where compact size and efficiency are crucial.

Q & A

  1. What is the maximum collector-emitter voltage of the BC847C-TP?
    The maximum collector-emitter voltage (Vceo) is 45 V.
  2. What is the package type of the BC847C-TP?
    The BC847C-TP is housed in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
  3. What is the minimum DC current gain (hFE) of the BC847C-TP?
    The minimum DC current gain (hFE) is 420 @ 2mA, 5V.
  4. What is the maximum junction temperature of the BC847C-TP?
    The maximum junction temperature (Tj) is 150°C.
  5. What are the typical applications of the BC847C-TP?
    The BC847C-TP is used in general-purpose switching and amplification circuits, automotive systems, industrial control systems, consumer electronics, and mobile/wearable devices.
  6. What is the power dissipation (Pd) of the BC847C-TP?
    The power dissipation (Pd) is 225 mW.
  7. What is the emitter-base voltage (Vebo) of the BC847C-TP?
    The emitter-base voltage (Vebo) is 6 V.
  8. Is the BC847C-TP RoHS compliant?
    Yes, the BC847C-TP is RoHS compliant.
  9. What is the collector-emitter saturation voltage (Vce(sat)) of the BC847C-TP?
    The collector-emitter saturation voltage (Vce(sat)) is 500 mV @ 5mA, 100mA.
  10. What is the gain bandwidth product (fT) of the BC847C-TP?
    The gain bandwidth product (fT) is 100 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:225 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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Similar Products

Part Number BC847C-TP BC847CT-TP BC847CW-TP BC847B-TP
Manufacturer Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co
Product Status Active Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA 15nA (ICBO) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 225 mW 150 mW - 225 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-523 SOT-323 SOT-23

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