TIP112-BP
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Micro Commercial Co TIP112-BP

Manufacturer No:
TIP112-BP
Manufacturer:
Micro Commercial Co
Package:
Tube
Description:
TRANS NPN DARL 100V 2A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP112-BP is a silicon Epitaxial-Base NPN transistor in a monolithic Darlington configuration, manufactured by Micro Commercial Co. It is packaged in a Jedec TO-220-3 plastic package. This transistor is designed for medium power linear and switching applications, offering a balance between power handling and switching speed.

The TIP112-BP is part of the Darlington transistor family, which is known for its high current gain and low collector-emitter saturation voltage, making it suitable for a variety of industrial and consumer electronics applications.

Key Specifications

Parameter Value Unit
Type NPN - Darlington
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Max Power Dissipation 2W
Current Rating 2A
Polarity NPN
Emitter Base Voltage (VEBO) 5V
Max Junction Temperature (Tj) 150°C
Collector-Emitter Breakdown Voltage 100V
Collector-Emitter Saturation Voltage 2.5V @ 8mA, 2A
DC Current Gain (hFE) 1000 @ VCE=4V, IC=1A (Min.)

Key Features

  • High DC Current Gain: hFE = 1000 @ VCE = 4V, IC = 1A (Min.)
  • Low Collector-Emitter Saturation Voltage: VCE(SAT) = 2.5V @ IC = 2A, IB = 8mA
  • High Power Handling: Suitable for medium power linear and switching applications.
  • Compact Packaging: Jedec TO-220-3 plastic package, which is widely used and easy to mount.
  • Wide Operating Temperature Range: Max Junction Temperature (Tj) of 150°C, ensuring reliability in various environmental conditions.

Applications

  • Linear and Switching Industrial Equipment: Suitable for use in industrial control systems, power supplies, and other linear and switching applications
  • DC/DC Converters and Supply Line Switching: Used in DC/DC converters, supply line switching, and other power management circuits
  • Battery Chargers and LCD Backlighting: Applicable in battery charging circuits and LCD backlight drivers
  • Peripheral Drivers and Inductive Load Drivers: Can be used to drive relays, buzzers, motors, and other inductive loads

Q & A

  1. What is the TIP112-BP transistor?

    The TIP112-BP is a silicon Epitaxial-Base NPN transistor in a monolithic Darlington configuration, packaged in a Jedec TO-220-3 plastic package.

  2. What are the key applications of the TIP112-BP transistor?

    The TIP112-BP is used in linear and switching industrial equipment, DC/DC converters, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers.

  3. What is the maximum collector-emitter breakdown voltage of the TIP112-BP?

    The maximum collector-emitter breakdown voltage is 100V.

  4. What is the maximum current rating of the TIP112-BP?

    The maximum current rating is 2A.

  5. What is the maximum junction temperature of the TIP112-BP?

    The maximum junction temperature is 150°C.

  6. What is the typical DC current gain (hFE) of the TIP112-BP?

    The typical DC current gain (hFE) is 1000 @ VCE = 4V, IC = 1A (Min.).

  7. What is the collector-emitter saturation voltage of the TIP112-BP?

    The collector-emitter saturation voltage is 2.5V @ IC = 2A, IB = 8mA.

  8. What are the equivalent transistors to the TIP112-BP?

    The equivalent transistors include TIP115, TIP117, and TIP110.

  9. What is the package type of the TIP112-BP transistor?

    The TIP112-BP is packaged in a Jedec TO-220-3 plastic package.

  10. Is the TIP112-BP transistor RoHS and REACH compliant?

    Yes, the TIP112-BP is RoHS and REACH compliant, containing no Substances of Very High Concern (SVHC) above the threshold concentration

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
Power - Max:50 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
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Same Series
TIP111-BP
TIP111-BP
TRANS NPN DARL 80V 2A TO220AB
TIP112-BP
TIP112-BP
TRANS NPN DARL 100V 2A TO220AB

Similar Products

Part Number TIP112-BP TIP116-BP TIP122-BP TIP115-BP TIP117-BP TIP102-BP TIP110-BP TIP111-BP
Manufacturer Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 2 A 2 A 5 A 2 A 2 A 8 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 80 V 100 V 60 V 100 V 100 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 4V @ 20mA, 5A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 2mA 2mA 500µA 2mA 2mA 50µA 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 3A, 3V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 3A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V
Power - Max 50 W 2 W 65 W 2 W 2 W 80 W 50 W 50 W
Frequency - Transition - - - - - - - -
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB

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