TIP112-BP
  • Share:

Micro Commercial Co TIP112-BP

Manufacturer No:
TIP112-BP
Manufacturer:
Micro Commercial Co
Package:
Tube
Description:
TRANS NPN DARL 100V 2A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP112-BP is a silicon Epitaxial-Base NPN transistor in a monolithic Darlington configuration, manufactured by Micro Commercial Co. It is packaged in a Jedec TO-220-3 plastic package. This transistor is designed for medium power linear and switching applications, offering a balance between power handling and switching speed.

The TIP112-BP is part of the Darlington transistor family, which is known for its high current gain and low collector-emitter saturation voltage, making it suitable for a variety of industrial and consumer electronics applications.

Key Specifications

Parameter Value Unit
Type NPN - Darlington
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Max Power Dissipation 2W
Current Rating 2A
Polarity NPN
Emitter Base Voltage (VEBO) 5V
Max Junction Temperature (Tj) 150°C
Collector-Emitter Breakdown Voltage 100V
Collector-Emitter Saturation Voltage 2.5V @ 8mA, 2A
DC Current Gain (hFE) 1000 @ VCE=4V, IC=1A (Min.)

Key Features

  • High DC Current Gain: hFE = 1000 @ VCE = 4V, IC = 1A (Min.)
  • Low Collector-Emitter Saturation Voltage: VCE(SAT) = 2.5V @ IC = 2A, IB = 8mA
  • High Power Handling: Suitable for medium power linear and switching applications.
  • Compact Packaging: Jedec TO-220-3 plastic package, which is widely used and easy to mount.
  • Wide Operating Temperature Range: Max Junction Temperature (Tj) of 150°C, ensuring reliability in various environmental conditions.

Applications

  • Linear and Switching Industrial Equipment: Suitable for use in industrial control systems, power supplies, and other linear and switching applications
  • DC/DC Converters and Supply Line Switching: Used in DC/DC converters, supply line switching, and other power management circuits
  • Battery Chargers and LCD Backlighting: Applicable in battery charging circuits and LCD backlight drivers
  • Peripheral Drivers and Inductive Load Drivers: Can be used to drive relays, buzzers, motors, and other inductive loads

Q & A

  1. What is the TIP112-BP transistor?

    The TIP112-BP is a silicon Epitaxial-Base NPN transistor in a monolithic Darlington configuration, packaged in a Jedec TO-220-3 plastic package.

  2. What are the key applications of the TIP112-BP transistor?

    The TIP112-BP is used in linear and switching industrial equipment, DC/DC converters, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers.

  3. What is the maximum collector-emitter breakdown voltage of the TIP112-BP?

    The maximum collector-emitter breakdown voltage is 100V.

  4. What is the maximum current rating of the TIP112-BP?

    The maximum current rating is 2A.

  5. What is the maximum junction temperature of the TIP112-BP?

    The maximum junction temperature is 150°C.

  6. What is the typical DC current gain (hFE) of the TIP112-BP?

    The typical DC current gain (hFE) is 1000 @ VCE = 4V, IC = 1A (Min.).

  7. What is the collector-emitter saturation voltage of the TIP112-BP?

    The collector-emitter saturation voltage is 2.5V @ IC = 2A, IB = 8mA.

  8. What are the equivalent transistors to the TIP112-BP?

    The equivalent transistors include TIP115, TIP117, and TIP110.

  9. What is the package type of the TIP112-BP transistor?

    The TIP112-BP is packaged in a Jedec TO-220-3 plastic package.

  10. Is the TIP112-BP transistor RoHS and REACH compliant?

    Yes, the TIP112-BP is RoHS and REACH compliant, containing no Substances of Very High Concern (SVHC) above the threshold concentration

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
Power - Max:50 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
0 Remaining View Similar

In Stock

-
480

Please send RFQ , we will respond immediately.

Same Series
TIP111-BP
TIP111-BP
TRANS NPN DARL 80V 2A TO220AB
TIP112-BP
TIP112-BP
TRANS NPN DARL 100V 2A TO220AB

Similar Products

Part Number TIP112-BP TIP116-BP TIP122-BP TIP115-BP TIP117-BP TIP102-BP TIP110-BP TIP111-BP
Manufacturer Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 2 A 2 A 5 A 2 A 2 A 8 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 80 V 100 V 60 V 100 V 100 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 4V @ 20mA, 5A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 2mA 2mA 500µA 2mA 2mA 50µA 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 3A, 3V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 3A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V
Power - Max 50 W 2 W 65 W 2 W 2 W 80 W 50 W 50 W
Frequency - Transition - - - - - - - -
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB

Related Product By Categories

BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
ST13007
ST13007
STMicroelectronics
TRANS NPN 400V 8A TO220
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
BC846B215
BC846B215
NXP USA Inc.
0.1A, 65V, NPN, TO 236AB
BCX52E6327
BCX52E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BC846AWT1
BC846AWT1
onsemi
TRANS NPN 65V 0.1A SC70-3
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89

Related Product By Brand

1.5KE6.8A-TP
1.5KE6.8A-TP
Micro Commercial Co
TVS DIODE 5.8VWM 10.5VC DO201AE
BAP64-05W-TP
BAP64-05W-TP
Micro Commercial Co
RF DIODE PIN 175V 200MW SOT323
BAT54CDW-TP
BAT54CDW-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT363
1N5366B-TP
1N5366B-TP
Micro Commercial Co
DIODE ZENER 39V 5W DO15
BZX84B6V8-TP
BZX84B6V8-TP
Micro Commercial Co
DIODE ZENER 6.8V 350MW SOT23
BZX84B12-TP
BZX84B12-TP
Micro Commercial Co
DIODE ZENER 12V 350MW SOT23
BZX84C18-TP
BZX84C18-TP
Micro Commercial Co
DIODE ZENER 18V 350MW SOT23
BC847C-TP
BC847C-TP
Micro Commercial Co
TRANS NPN 45V 0.1A SOT23
BC856BWHE3-TP
BC856BWHE3-TP
Micro Commercial Co
TRANS PNP 65V 0.1A SOT323
TIP47-BP
TIP47-BP
Micro Commercial Co
TRANS NPN 250V 1A TO220AB
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
MC7812CT-BP
MC7812CT-BP
Micro Commercial Co
IC REG LINEAR 12V 1A TO220