TIP110-BP
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Micro Commercial Co TIP110-BP

Manufacturer No:
TIP110-BP
Manufacturer:
Micro Commercial Co
Package:
Tube
Description:
TRANS NPN DARL 60V 2A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP110-BP is a silicon epitaxial-based NPN transistor in a monolithic Darlington configuration, manufactured by Micro Commercial Co and packaged in a Jedec TO-220 plastic package. This transistor is designed for medium power linear and switching applications, offering high reliability and performance in various electronic circuits.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 Vdc
Collector-Base Voltage (VCB) 60 Vdc
Emitter-Base Voltage (VEB) 5.0 Vdc
Collector Current (IC) - Continuous 2.0 A
Base Current (IB) 50 mA
Total Power Dissipation @ TC = 25°C 50 W
Operating Junction Temperature (TJ) -65 to +150 °C
DC Current Gain (hFE) @ IC = 1.0 A 2500 (typ)
Collector-Emitter Saturation Voltage (VCE(sat)) @ IC = 2.0 A 2.5 Vdc
Height 15.75 mm
Length 10.4 mm
Width 4.6 mm

Key Features

  • High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 A
  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc (Min)
  • Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 A
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Compact TO-220 AB Package
  • Pb-Free Packages are Available

Applications

  • General-Purpose Amplifier
  • Low-Speed Switching
  • Medium Power Linear Applications

Q & A

  1. What is the TIP110-BP transistor?

    The TIP110-BP is a silicon epitaxial-based NPN transistor in a monolithic Darlington configuration, packaged in a Jedec TO-220 plastic package.

  2. What are the typical applications of the TIP110-BP?

    The TIP110-BP is used in general-purpose amplifier, low-speed switching, and medium power linear applications.

  3. What is the collector-emitter voltage (VCEO) of the TIP110-BP?

    The collector-emitter voltage (VCEO) of the TIP110-BP is 60 Vdc.

  4. What is the DC current gain (hFE) of the TIP110-BP?

    The DC current gain (hFE) of the TIP110-BP is typically 2500 at IC = 1.0 A.

  5. What is the collector-emitter saturation voltage (VCE(sat)) of the TIP110-BP?

    The collector-emitter saturation voltage (VCE(sat)) of the TIP110-BP is 2.5 Vdc at IC = 2.0 A.

  6. Is the TIP110-BP available in Pb-free packages?
  7. What is the operating junction temperature range of the TIP110-BP?

    The operating junction temperature range of the TIP110-BP is -65 to +150°C.

  8. What is the total power dissipation of the TIP110-BP at TC = 25°C?

    The total power dissipation of the TIP110-BP at TC = 25°C is 50 W.

  9. What is the base current (IB) of the TIP110-BP?

    The base current (IB) of the TIP110-BP is 50 mA.

  10. What is the emitter-base voltage (VEB) of the TIP110-BP?

    The emitter-base voltage (VEB) of the TIP110-BP is 5.0 Vdc.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
Power - Max:50 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
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Same Series
TIP111-BP
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TIP112-BP
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Similar Products

Part Number TIP110-BP TIP111-BP TIP112-BP TIP116-BP TIP120-BP TIP115-BP TIP117-BP TIP100-BP
Manufacturer Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A 5 A 2 A 2 A 8 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 100 V 80 V 60 V 60 V 100 V 60 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 4V @ 20mA, 5A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max) 2mA 2mA 2mA 2mA 500µA 2mA 2mA 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 3A, 3V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 3A, 4V
Power - Max 50 W 50 W 50 W 2 W 65 W 2 W 2 W 80 W
Frequency - Transition - - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB

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