Overview
The IRFP4668PBF is a high-performance, single N-Channel MOSFET produced by Infineon Technologies. It is part of the HEXFET® family, known for its enhanced power handling and reliability. This MOSFET is designed for high-efficiency applications, offering low on-state resistance and high current capability, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| FET Type | N-Ch | |
| No of Channels | 1 | |
| Drain-to-Source Voltage (Vdss) | 200 | V |
| Drain-Source On Resistance (Rds(on)) | 9.7 | mΩ |
| Rated Power Dissipation (Pd) | 520 | W |
| Gate Charge (Qg) | 161 | nC |
| Gate-Source Voltage (Vgss) | ±30 | V |
| Drain Current (Id) | 130 | A |
| Turn-on Delay Time | 41 | ns |
| Turn-off Delay Time | 64 | ns |
| Rise Time | 105 | ns |
| Fall Time | 74 | ns |
| Operating Temperature Range | -55°C to +175°C | |
| Gate Source Threshold | 5 | V |
| Input Capacitance | 10720 | pF |
| Package Style | TO-247AC | |
| Mounting Method | Through Hole |
Key Features
- High Efficiency: The IRFP4668PBF offers low on-state resistance of 9.7 mΩ, making it highly efficient for power switching applications.
- High Current Capability: It can handle a continuous drain current of 130 A and a pulsed drain current of up to 520 A.
- Enhanced Ruggedness: Improved gate, avalanche, and dynamic dV/dt ruggedness ensure reliable operation in demanding environments.
- Full Characterization: Fully characterized capacitance and avalanche SOA (Safe Operating Area) provide detailed performance metrics.
- Enhanced Body Diode: The MOSFET features an enhanced body diode with improved dV/dt and dI/dt capability.
- Lead-Free Packaging: The TO-247AC package is lead-free, complying with environmental regulations.
Applications
- High Efficiency Synchronous Rectification in SMPS: Suitable for synchronous rectification in switch-mode power supplies due to its low on-state resistance and high current handling.
- Uninterruptible Power Supply (UPS): Used in UPS systems for reliable power switching and management.
- High Speed Power Switching: Ideal for high-speed power switching applications due to its fast switching times.
- Hard Switched and High Frequency Circuits: Suitable for hard-switched and high-frequency circuits where high efficiency and reliability are crucial.
Q & A
- What is the maximum drain-to-source voltage of the IRFP4668PBF?
The maximum drain-to-source voltage (Vdss) is 200 V.
- What is the typical on-state resistance of the IRFP4668PBF?
The typical on-state resistance (Rds(on)) is 9.7 mΩ.
- What is the maximum continuous drain current of the IRFP4668PBF?
The maximum continuous drain current (Id) is 130 A.
- What is the gate charge (Qg) of the IRFP4668PBF?
The gate charge (Qg) is 161 nC.
- What is the operating temperature range of the IRFP4668PBF?
The operating temperature range is -55°C to +175°C.
- What is the package style of the IRFP4668PBF?
The package style is TO-247AC.
- What is the mounting method of the IRFP4668PBF?
The mounting method is Through Hole.
- What are some common applications of the IRFP4668PBF?
Common applications include high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, and hard-switched and high-frequency circuits.
- Is the IRFP4668PBF lead-free?
Yes, the IRFP4668PBF is lead-free.
- What is the maximum power dissipation of the IRFP4668PBF?
The maximum power dissipation (Pd) is 520 W.
